公开(公告)号：US20180012760A1

公开(公告)日：2018-01-11

申请号：US15674763

申请日：2017-08-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui SHU ,  Daniel JAEGER ,  Garo Jacques DERDERIAN ,  Haifeng SHENG ,  Jinping LIU

IPC: H01L21/033 ,  H01L27/11

CPC classification number: H01L27/1116 ,  H01L21/3086 ,  H01L27/1104 ,  H01L28/00

Abstract: Devices and methods of fabricating integrated circuit devices with reduced cell height are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a substrate including a logic area and an SRAM area, a fin material layer, and a hardmask layer; depositing a mandrel over the logic area; depositing a sacrificial spacer layer; etching the sacrificial spacer layer to define a sacrificial set of vertical spacers; etching the hardmask layer; leaving a set of vertical hardmask spacers; depositing a first spacer layer; etching the first spacer layer to define a first set of vertical spacers over the logic area; depositing an SOH layer; etching an opening in the SOH layer over the SRAM area; depositing a second spacer layer; and etching the second spacer layer to define a second set of spacers over the SRAM area.

公开(公告)号：US20150357285A1

公开(公告)日：2015-12-10

申请号：US14799116

申请日：2015-07-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Huy CAO ,  Songkram SRIVATHANAKUL ,  Huang LIU ,  Garo Jacques DERDERIAN ,  Boaz ALPERSON

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76831 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material having a set carbon content conformally within the at least one contact opening disposed over the semiconductor substrate.

Abstract translation: 提供电路结构的导电接触结构及其制造方法。 该制造包括例如提供设置在半导体衬底上的至少一个接触开口; 在所述半导体衬底上设置的所述至少一个接触开口中形成具有固定碳含量的富碳接触衬垫材料。

公开(公告)号：US20190378763A1

公开(公告)日：2019-12-12

申请号：US16005073

申请日：2018-06-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Haiting WANG ,  Ruilong XIE ,  Shesh Mani PANDEY ,  Hui ZANG ,  Garo Jacques DERDERIAN ,  Scott BEASOR

IPC: H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L21/308 ,  H01L21/762 ,  H01L27/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a hybrid fin cut with improved fin profiles and methods of manufacture. The structure includes: a plurality of fin structures in a first region of a first density of fin structures; a plurality of fin structures in a second region of a second density of fin structures; and a plurality of fin structures in a third region of a third density of fin structures. The first density, second density and third density of fin structures are different densities of fin structures, and the plurality of fin structures in the first region, the second region and the third region have a substantially uniform profile.

公开(公告)号：US20150194342A1

公开(公告)日：2015-07-09

申请号：US14150260

申请日：2014-01-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Huy CAO ,  Songkram SRIVATHANAKUL ,  Huang LIU ,  Garo Jacques DERDERIAN ,  Boaz ALPERSON

IPC: H01L21/768 ,  H01L23/482

CPC classification number: H01L23/5329 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76831 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material including a carbon-containing species and an elemental carbon disposed therein, the carbon-containing species and the elemental carbon together defining a set carbon content within the carbon-rich contact liner material; and depositing the carbon-rich contact liner material conformally within the at least one contact opening disposed over the semiconductor substrate.

Abstract translation: 提供电路结构的导电接触结构及其制造方法。 该制造包括例如提供设置在半导体衬底上的至少一个接触开口; 形成包含含碳物质和设置在其中的元素碳的富碳接触衬垫材料，所述含碳物质和所述元素碳一起限定所述富碳接触衬里材料内的固定碳含量; 以及将所述富碳接触衬垫材料共形地沉积在设置在所述半导体衬底上的所述至少一个接触开口内。