公开(公告)号：US20170133325A1

公开(公告)日：2017-05-11

申请号：US14933650

申请日：2015-11-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Moosung M. CHAE ,  Ki Young LEE ,  Songkram SRIVATHANAKUL

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L21/76858 ,  H01L21/76867 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53209

Abstract: A method of forming a self-forming barrier includes selectively removing a portion of a semiconductor dielectric layer to form a three-dimensional pattern within a remaining portion of the dielectric layer. A metal liner layer is disposed on a surface of the pattern to provide a metal lined pattern. A metal filling is disposed over the metal lined pattern, the metal filling being at least partially composed of a metal used in the metal liner layer. Diffusion ions are disposed in one of the metal filling and the metal liner layer. Heat is applied to the metal filling and metal liner layer to diffuse the diffusion ions from one of the metal filling and the metal liner layer into the dielectric layer to form a barrier layer between the metal liner layer and the dielectric layer.

公开(公告)号：US20170250243A1

公开(公告)日：2017-08-31

申请号：US15459450

申请日：2017-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young LEE ,  Woong Lae CHO ,  Jae Ho JOUNG

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10805 ,  H01L28/00 ,  H01L28/75 ,  H01L28/92

Abstract: A capacitor includes a bottom electrode and a top electrode positioned above the bottom electrode. The top electrode and the bottom electrode are conductively coupled to one another. A middle electrode is positioned between the bottom electrode and the top electrode. A lower dielectric layer is positioned between the bottom electrode and the middle electrode. An upper dielectric layer is positioned between the middle electrode and the top electrode. A first contact is conductively coupled to the top electrode. A second contact is conductively coupled to the middle electrode.

公开(公告)号：US20140098459A1

公开(公告)日：2014-04-10

申请号：US13648504

申请日：2012-10-10

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Ki Young LEE ,  Sanggil BAE ,  Jae Ho JOUNG

IPC: H01G4/228

CPC classification number: H01L28/60 ,  H01L27/10805

Abstract: Capacitor and contact structures are provided, as well as methods for forming the capacitor and contact structures. The methods include, for instance, providing a layer of conductive material above a conductive structure and above a lower electrode of a capacitor; etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure; and forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contacting one of the lower electrode of the capacitor, or the upper electrode of the capacitor.

Abstract translation: 提供了电容器和接触结构，以及形成电容器和接触结构的方法。 所述方法包括例如在导电结构之上和电容器的下电极之上提供导电材料层; 蚀刻导电材料层以限定导电材料硬掩模和电容器的上电极，导电材料硬掩模至少部分地设置在导电结构之上; 以及形成第一导电接触结构和第二导电接触结构，所述第一导电接触结构延伸穿过所述导电材料硬掩模中的开口并导电地接触所述导电结构，并且所述第二导电接触结构导电地接触所述导电接触结构的下电极之一 电容器或电容器的上电极。

公开(公告)号：US20160268195A1

公开(公告)日：2016-09-15

申请号：US14656770

申请日：2015-03-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young LEE ,  Moosung M. CHAE ,  Woo Sik KIM

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/5227 ,  H01L21/02126 ,  H01L21/02362 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53295 ,  H01L28/10

Abstract: Integrated circuits with single core inductors and methods for producing them are provided. Embodiments include forming a trench in a dielectric layer; forming a first metal-oxide hard mask by disposing a metal hard mask and an oxide hard mask over the dielectric layer and in strips in the trench; forming metal line trenches through the first metal-oxide hard mask and into the first dielectric layer on opposite sides of the inductor trench and first vias; filling the first metal line trenches, first vias, and trench; forming another dielectric layer and a second metal-oxide hard mask over the filled trench; forming a second trench through the second metal-oxide hard mask and into the second dielectric layer and second metal line trenches and second vias; and filling the second metal line trenches, second vias, and second trench.

Abstract translation: 提供具有单芯电感器的集成电路及其制造方法。 实施例包括在电介质层中形成沟槽; 通过在所述电介质层上设置金属硬掩模和氧化物硬掩模，并且在所述沟槽中以条状形成第一金属氧化物硬掩模; 通过所述第一金属氧化物硬掩模形成金属线沟槽并进入所述电感器沟槽和第一通孔的相对侧上的第一介电层; 填充第一金属线沟槽，第一通孔和沟槽; 在填充的沟槽上形成另一介电层和第二金属氧化物硬掩模; 通过第二金属氧化物硬掩模形成第二沟槽并形成第二介电层和第二金属线沟槽和第二通孔; 以及填充第二金属线沟槽，第二通孔和第二沟槽。

公开(公告)号：US20150364540A1

公开(公告)日：2015-12-17

申请号：US14837288

申请日：2015-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young LEE ,  Sanggil BAE ,  Jae Ho JOUNG

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10805

Abstract: Capacitor and contact structures are provided, as well as methods for forming the capacitor and contact structures. The methods include, for instance, providing a layer of conductive material above a conductive structure and above a lower electrode of a capacitor; etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure; and forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contacting one of the lower electrode of the capacitor, or the upper electrode of the capacitor.

Abstract translation: 提供了电容器和接触结构，以及形成电容器和接触结构的方法。 所述方法包括例如在导电结构之上和电容器的下电极之上提供导电材料层; 蚀刻导电材料层以限定导电材料硬掩模和电容器的上电极，导电材料硬掩模至少部分地设置在导电结构之上; 以及形成第一导电接触结构和第二导电接触结构，所述第一导电接触结构延伸穿过所述导电材料硬掩模中的开口并导电地接触所述导电结构，并且所述第二导电接触结构导电地接触所述导电接触结构的下电极之一 电容器或电容器的上电极。