公开(公告)号：US09564505B2

公开(公告)日：2017-02-07

申请号：US14254939

申请日：2014-04-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Michael P. Chudzik ,  Martin M. Frank ,  Herbert L. Ho ,  Mark J. Hurley ,  Rashmi Jha ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

IPC: H01L21/70 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51

CPC classification number: H01L29/49 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4958 ,  H01L29/517

Abstract: Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.

Abstract translation: 提出了离子注入来改变双功能金属栅极整合的有效功函数。 一种方法可以包括在第一类型场效应晶体管（FET）区域和第二类型FET区域上形成高介电常数（高k）层; 在第一型FET区域和第二类型FET区域上形成具有与第一型FET兼容的第一有效功函数的金属层; 以及通过在第二类型FET区域上将金属注入到金属层中，将第一有效功函数改变为第二类不同的有效功函数。

公开(公告)号：US20140162447A1

公开(公告)日：2014-06-12

申请号：US13709250

申请日：2012-12-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES, INC. ,  RENESAS ELECTRONICS CORPORATION

Inventor： Lisa F. Edge ,  Martin M. Frank ,  Balasubramanian S. Haran ,  Atsuro Inada ,  Sivananda K. Kanakasabapathy ,  Andreas Knorr ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Soon-cheon Seo

IPC: H01L21/28

CPC classification number: H01L29/66795 ,  H01L29/41791

Abstract: A method for fabricating a field effect transistor device includes patterning a fin on substrate, patterning a gate stack over a portion of the fin and a portion of an insulator layer arranged on the substrate, forming a protective barrier over the gate stack, a portion of the fin and a portion of the insulator layer, the protective barrier enveloping the gate stack, depositing a second insulator layer over portions of the fin and the protective barrier, performing a first etching process to selectively remove portions of the second insulator layer to define cavities that expose portions of source and drain regions of the fin without appreciably removing the protective barrier, and depositing a conductive material in the cavities.

Abstract translation: 一种用于制造场效应晶体管器件的方法，包括对衬底上的翅片进行图案化，在栅极堆叠的一部分上构图栅极堆叠，以及布置在衬底上的绝缘体层的一部分，在栅极叠层上形成保护屏障， 所述翅片和所述绝缘体层的一部分，所述保护屏障包围所述栅极堆叠，在所述鳍片和所述保护屏障的部分上沉积第二绝缘体层，执行第一蚀刻工艺以选择性地去除所述第二绝缘体层的部分以限定空腔 其暴露鳍片的源极和漏极区域的部分，而不明显地去除保护屏障，以及在空腔中沉积导电材料。