Abstract:
Disclosed are a system and method that control integrated circuit chip temperature using frequency scaling based on predetermined temperature-frequency settings. During integrated circuit chip operation, a controller causes a variable clock signal generator to adjust the frequency of a clock signal that coordinates operations of an integrated circuit chip based on the temperature of the integrated circuit chip and on predetermined temperature-frequency settings. The temperature-frequency settings are predetermined in order to ensure that the frequency of the clock signal, as adjusted, remains sufficiently high to meet a chip performance specification, but sufficiently low to prevent the temperature from rising above a predetermined maximum temperature in order to limit power consumption. Also disclosed is a method of generating such temperature-frequency settings during timing analysis.
Abstract:
Disclosed is a method wherein selective voltage binning and leakage power screening of integrated circuit (IC) chips are performed. Additionally, pre-test power-optimized bin reassignments are made on a chip-by-chip basis. Specifically, a leakage power measurement of an IC chip selected from a voltage bin can is compared to a bin-specific leakage power screen value of the next slower voltage bin. If the leakage power measurement is higher, the IC chip will be left in the voltage bin to which it is currently assigned. If the leakage power measurement is lower, the IC chip will be reassigned to that next slower voltage bin. These processes can be iteratively repeated until no slower voltage bins are available or the IC chip cannot be reassigned. IC chips can subsequently be tested according to testing parameters, including the minimum test voltages, associated with the voltage bins to which they are finally assigned.
Abstract:
Design methods and systems disclosed use a process window-aware timing analysis of an integrated circuit (IC) chip design for improved accuracy. Specifically, a process distribution for the design is defined and divided into process windows. Timing parameter adjustment factors are assigned to the process windows. A timing analysis is performed in order to acquire an initial solution for a timing parameter (e.g., delay, slack or slew). For each specific process window, this initial solution is adjusted by the predetermined timing parameter adjustment factor assigned to that specific process window. The adjusted solutions for the different process windows account for process window-to-process window variations in the widths of distribution of a process parameter (e.g., leakage power) and can be used to predict whether IC chips manufactured according the IC chip design will meet established timing requirements (e.g., required arrival times (RATs)) regardless of where they fall within the process distribution.
Abstract:
Disclosed is a method wherein selective voltage binning and leakage power screening of integrated circuit (IC) chips are performed. Additionally, pre-test power-optimized bin reassignments are made on a chip-by-chip basis. Specifically, a leakage power measurement of an IC chip selected from a voltage bin can is compared to a bin-specific leakage power screen value of the next slower voltage bin. If the leakage power measurement is higher, the IC chip will be left in the voltage bin to which it is currently assigned. If the leakage power measurement is lower, the IC chip will be reassigned to that next slower voltage bin. These processes can be iteratively repeated until no slower voltage bins are available or the IC chip cannot be reassigned. IC chips can subsequently be tested according to testing parameters, including the minimum test voltages, associated with the voltage bins to which they are finally assigned.
Abstract:
Disclosed is a method wherein selective voltage binning and leakage power screening of integrated circuit (IC) chips are performed. Additionally, pre-test power-optimized bin reassignments are made on a chip-by-chip basis. Specifically, a leakage power measurement of an IC chip selected from a voltage bin can is compared to a bin-specific leakage power screen value of the next slower voltage bin. If the leakage power measurement is higher, the IC chip will be left in the voltage bin to which it is currently assigned. If the leakage power measurement is lower, the IC chip will be reassigned to that next slower voltage bin. These processes can be iteratively repeated until no slower voltage bins are available or the IC chip cannot be reassigned. IC chips can subsequently be tested according to testing parameters, including the minimum test voltages, associated with the voltage bins to which they are finally assigned.
Abstract:
Design methods and systems disclosed use a process window-aware timing analysis of an integrated circuit (IC) chip design for improved accuracy. Specifically, a process distribution for the design is defined and divided into process windows. Timing parameter adjustment factors are assigned to the process windows. A timing analysis is performed in order to acquire an initial solution for a timing parameter (e.g., delay, slack or slew). For each specific process window, this initial solution is adjusted by the predetermined timing parameter adjustment factor assigned to that specific process window. The adjusted solutions for the different process windows account for process window-to-process window variations in the widths of distribution of a process parameter (e.g., leakage power) and can be used to predict whether IC chips manufactured according the IC chip design will meet established timing requirements (e.g., required arrival times (RATs)) regardless of where they fall within the process distribution.
Abstract:
Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated circuit design. The minimum operating voltage and hardware variations for each device in the design is determined and a process distribution for the chips is divided into process windows. Vmax and Vmin to support system frequency are determined for each process window. Vmin vs. process-bin mean and sigma sensitivity is calculated using information about specific devices. The voltage for each process window that generates Vmin for specific devices is identified. Power at the slow end and fast end of each process window is evaluated using the voltage to support system frequency. Pmax is determined. Vmax for each process window that generates Pmax is determined. A voltage is identified between Vmin and Vmax that maximizes the timing margin for system frequency while minimizing risk for Pmax. The chips are sorted into different process windows, based on the voltage identified.