公开(公告)号：US09966735B2

公开(公告)日：2018-05-08

申请号：US15188419

申请日：2016-06-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Cheng-Wei Cheng ,  Frank R. Libsch ,  Tak H. Ning ,  Uzma Rana ,  Kuen-Ting Shiu

IPC: H01S5/00 ,  H01S5/227 ,  H01S5/026 ,  H01S3/063 ,  H01S3/23 ,  H01S5/16 ,  H01S5/20 ,  H01S5/30 ,  H01S5/125 ,  H01S5/02 ,  H01S5/10

CPC classification number: H01S5/2275 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1017 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/166 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/18363 ,  H01S3/0315

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

公开(公告)号：US09407066B2

公开(公告)日：2016-08-02

申请号：US13949973

申请日：2013-07-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cheng-Wei Cheng ,  Frank R. Libsch ,  Tak H. Ning ,  Uzma Rana ,  Kuen-Ting Shiu

IPC: H01L21/00 ,  H01S5/00 ,  H01S5/227 ,  H01S5/16 ,  H01S5/02 ,  H01S5/10

CPC classification number: H01S5/2275 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1017 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/166 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/18363 ,  H01S3/0315

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

Abstract translation: 与硅光子电路集成的III-V激光器及其制造方法包括由衬底上的III-V半导体形成的三层半导体叠层，其中中间层具有比顶层和底层更低的带隙; 整体地形成在所述堆叠的第一端处的反射镜区域，被构造成在所述堆叠的方向上反射发射的光; 以及波导区域，其单片地形成在所述堆叠的第二端处，被配置为透射发射的光。

公开(公告)号：US20160301192A1

公开(公告)日：2016-10-13

申请号：US15188419

申请日：2016-06-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Cheng-Wei Cheng ,  Frank R. Libsch ,  Tak H. Ning ,  Uzma Rana ,  Kuen-Ting Shiu

IPC: H01S5/227 ,  H01S5/30 ,  H01S5/10 ,  H01S5/20

CPC classification number: H01S5/2275 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1017 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/166 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/18363 ,  H01S3/0315

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.