公开(公告)号：US09966735B2

公开(公告)日：2018-05-08

申请号：US15188419

申请日：2016-06-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Cheng-Wei Cheng ,  Frank R. Libsch ,  Tak H. Ning ,  Uzma Rana ,  Kuen-Ting Shiu

IPC: H01S5/00 ,  H01S5/227 ,  H01S5/026 ,  H01S3/063 ,  H01S3/23 ,  H01S5/16 ,  H01S5/20 ,  H01S5/30 ,  H01S5/125 ,  H01S5/02 ,  H01S5/10

CPC classification number: H01S5/2275 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1017 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/166 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/18363 ,  H01S3/0315

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

公开(公告)号：US09565759B2

公开(公告)日：2017-02-07

申请号：US14700850

申请日：2015-04-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Gareth Hougham ,  Gerard McVicker ,  Xiaoxiong Gu ,  Sung K. Kang ,  Frank R. Libsch ,  Xiao H. Liu

IPC: H05K1/11 ,  H01R43/16 ,  H01R12/70 ,  H01R12/71 ,  H05K3/40 ,  H01R13/24 ,  H05K3/32

CPC classification number: H05K1/11 ,  H01R12/7082 ,  H01R12/714 ,  H01R13/2414 ,  H01R13/2421 ,  H01R43/16 ,  H05K3/326 ,  H05K3/4092 ,  H05K2201/0311 ,  H05K2201/10265 ,  H05K2201/10378 ,  Y10T29/49224 ,  Y10T29/49226

Abstract: A contact structure and assembly for a microelectronics device includes first and second electrically conductive contacts being helically shaped. A carrier element is attached to and positioned between the first and second contacts. The first and second contacts are in electrical communication with each other, and the first and second contacts are in a mirror image relationship with each other. A pair of insulating substrates each include electrically conductive members. A contact point on each of the first and second contacts is attached and electrically communicating to respective electrically conductive members such that the first and second electrically conductive contacts between the pair of insulating substrates form an electrically conductive package. A metal layer on the carrier element provides electrical conductivity through a first opening defined by the carrier element between the first and second portions of the helix shaped contact.

Abstract translation: 用于微电子器件的接触结构和组件包括螺旋形的第一和第二导电触头。 载体元件附接到并定位在第一和第二触点之间。 第一和第二触点彼此电连通，并且第一和第二触点彼此成镜像关系。 一对绝缘基板各自包括导电构件。 每个第一和第二触点上的接触点被附接并与相应的导电构件电连通，使得该对绝缘基板之间的第一和第二导电触点形成导电封装。 载体元件上的金属层通过由载体元件在螺旋形接触件的第一和第二部分之间限定的第一开口提供导电性。

公开(公告)号：US20160301192A1

公开(公告)日：2016-10-13

申请号：US15188419

申请日：2016-06-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Cheng-Wei Cheng ,  Frank R. Libsch ,  Tak H. Ning ,  Uzma Rana ,  Kuen-Ting Shiu

IPC: H01S5/227 ,  H01S5/30 ,  H01S5/10 ,  H01S5/20

CPC classification number: H01S5/2275 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1017 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/166 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/18363 ,  H01S3/0315

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

公开(公告)号：US09407066B2

公开(公告)日：2016-08-02

申请号：US13949973

申请日：2013-07-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cheng-Wei Cheng ,  Frank R. Libsch ,  Tak H. Ning ,  Uzma Rana ,  Kuen-Ting Shiu

IPC: H01L21/00 ,  H01S5/00 ,  H01S5/227 ,  H01S5/16 ,  H01S5/02 ,  H01S5/10

CPC classification number: H01S5/2275 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1017 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/166 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/18363 ,  H01S3/0315

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

Abstract translation: 与硅光子电路集成的III-V激光器及其制造方法包括由衬底上的III-V半导体形成的三层半导体叠层，其中中间层具有比顶层和底层更低的带隙; 整体地形成在所述堆叠的第一端处的反射镜区域，被构造成在所述堆叠的方向上反射发射的光; 以及波导区域，其单片地形成在所述堆叠的第二端处，被配置为透射发射的光。