公开(公告)号：US09379007B2

公开(公告)日：2016-06-28

申请号：US13874509

申请日：2013-05-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Charles L. Arvin ,  Kenneth Bird ,  Charles C. Goldsmith ,  Sung K. Kang ,  Minhua Lu ,  Clare J. McCarthy ,  Eric D. Perfecto ,  Srinivasa S. N. Reddy ,  Krystyna W. Semkow ,  Thomas A. Wassick

IPC: H01L21/321 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L21/7685 ,  H01L21/321 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/0382 ,  H01L2224/0401 ,  H01L2224/11003 ,  H01L2224/11005 ,  H01L2224/1111 ,  H01L2224/1131 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13017 ,  H01L2224/13027 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13562 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.

Abstract translation: 本发明的实施例包括无铅焊料互连结构和用于制造无铅互连结构的方法。 该结构包括具有最后金属层的半导体衬底，附着于最后金属层的铜基座，附着于铜基座的阻挡层，与阻挡层连接的阻挡保护层，以及与该阻挡层相接触的无铅焊料层 铜底座的最小一侧。

公开(公告)号：US09565759B2

公开(公告)日：2017-02-07

申请号：US14700850

申请日：2015-04-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Gareth Hougham ,  Gerard McVicker ,  Xiaoxiong Gu ,  Sung K. Kang ,  Frank R. Libsch ,  Xiao H. Liu

IPC: H05K1/11 ,  H01R43/16 ,  H01R12/70 ,  H01R12/71 ,  H05K3/40 ,  H01R13/24 ,  H05K3/32

CPC classification number: H05K1/11 ,  H01R12/7082 ,  H01R12/714 ,  H01R13/2414 ,  H01R13/2421 ,  H01R43/16 ,  H05K3/326 ,  H05K3/4092 ,  H05K2201/0311 ,  H05K2201/10265 ,  H05K2201/10378 ,  Y10T29/49224 ,  Y10T29/49226

Abstract: A contact structure and assembly for a microelectronics device includes first and second electrically conductive contacts being helically shaped. A carrier element is attached to and positioned between the first and second contacts. The first and second contacts are in electrical communication with each other, and the first and second contacts are in a mirror image relationship with each other. A pair of insulating substrates each include electrically conductive members. A contact point on each of the first and second contacts is attached and electrically communicating to respective electrically conductive members such that the first and second electrically conductive contacts between the pair of insulating substrates form an electrically conductive package. A metal layer on the carrier element provides electrical conductivity through a first opening defined by the carrier element between the first and second portions of the helix shaped contact.

Abstract translation: 用于微电子器件的接触结构和组件包括螺旋形的第一和第二导电触头。 载体元件附接到并定位在第一和第二触点之间。 第一和第二触点彼此电连通，并且第一和第二触点彼此成镜像关系。 一对绝缘基板各自包括导电构件。 每个第一和第二触点上的接触点被附接并与相应的导电构件电连通，使得该对绝缘基板之间的第一和第二导电触点形成导电封装。 载体元件上的金属层通过由载体元件在螺旋形接触件的第一和第二部分之间限定的第一开口提供导电性。