公开(公告)号：US10685951B1

公开(公告)日：2020-06-16

申请号：US16214450

申请日：2018-12-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Anuj Gupta ,  Bipul C. Paul ,  Joseph Versaggi

IPC: H01L27/02 ,  H01L27/105 ,  H01L45/00 ,  H01L21/768 ,  H01L43/12 ,  G11C5/06

Abstract: Structures for a non-volatile memory and methods for fabricating such structures. An active array region of a memory structure includes a plurality of active bitcells and a wordline. Dummy bitcells of the memory structure are arranged in a column within the active array region. An interconnect structure includes a metallization level having a wordline strap that extends across the active array region and that is arranged over the active array region.

公开(公告)号：US10755982B1

公开(公告)日：2020-08-25

申请号：US16508816

申请日：2019-07-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Abu Naser M. Zainuddin ,  Wei Ma ,  Daniel Jaeger ,  Joseph Versaggi ,  Jae Gon Lee ,  Thomas Kauerauf

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/66

Abstract: One illustrative method disclosed herein includes forming 1st and 2nd sacrificial gate structures for, respectively, 1st and 2nd devices, removing 1st and 2nd sacrificial gate electrodes from the 1st and 2nd sacrificial gate structures so as to at least partially define, respectively, 1st and 2nd replacement gate (RMG) cavities, and removing the 2nd sacrificial gate insulation layer from the 2nd RMG cavity while leaving the 1st sacrificial gate insulation layer in position in the 1st RMG cavity. The method also includes forming a conformal gate insulation layer in both the 1st and 2nd RMG cavities, removing the conformal gate insulation layer and the 1st sacrificial gate insulation layer from the 1st RMG cavity while leaving the conformal gate insulation layer in the 2nd RMG cavity, and performing an oxidation process to form an interfacial gate insulation layer only in the 1st RMG cavity.

公开(公告)号：US10586581B1

公开(公告)日：2020-03-10

申请号：US16205921

申请日：2018-11-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Harsh N. Patel ,  Bipul C. Paul ,  Joseph Versaggi

IPC: G11C11/16 ,  G11C13/00 ,  G11C5/14 ,  H01L45/00 ,  H01L43/02 ,  H01L43/12

Abstract: Structures for a non-volatile memory and methods for forming and using such structures. A bitcell of the non-volatile memory includes a nonvolatile memory element and a field-effect transistor having a drain region coupled with the nonvolatile memory element, a source region, and a gate electrode. A word line is coupled with the gate electrode of the field-effect transistor, a bit line is coupled with the nonvolatile memory element, and a source line is coupled with the source region of the field-effect transistor. A power supply is configured to supply a negative bias voltage to the bit line in order to provide a first state for writing data to the nonvolatile memory element or to supply the negative bias voltage to the source line in order to provide a second state for writing data to the nonvolatile memory element.

公开(公告)号：US20200185374A1

公开(公告)日：2020-06-11

申请号：US16214450

申请日：2018-12-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Anuj Gupta ,  Bipul C. Paul ,  Joseph Versaggi

IPC: H01L27/02 ,  H01L27/105 ,  G11C5/06 ,  H01L21/768 ,  H01L43/12 ,  H01L45/00

Abstract: Structures for a non-volatile memory and methods for fabricating such structures. An active array region of a memory structure includes a plurality of active bitcells and a wordline. Dummy bitcells of the memory structure are arranged in a column within the active array region. An interconnect structure includes a metallization level having a wordline strap that extends across the active array region and that is arranged over the active array region.

公开(公告)号：US20190279990A1

公开(公告)日：2019-09-12

申请号：US15917027

申请日：2018-03-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Bipul C. Paul ,  Joseph Versaggi ,  Steven Bentley

IPC: H01L27/11 ,  G11C11/412 ,  G11C11/419 ,  H01L51/05 ,  H01L29/78 ,  H01L29/06 ,  H01L27/28

Abstract: Structures for a bitcell of a two-port static random access memory (SRAM) and methods for forming a structure for a bitcell of a two-port SRAM. A storage element of the SRAM includes a first pull-up (PU) vertical-transport field-effect transistor (VTFET) with a fin, a first pull-down (PD) VTFET with a fin that is aligned in a first row with the fin of the first PU VTFET, a second PU VTFET with a fin, and a second PD VTFET with a fin that is aligned in a second row with the fin of the second PU VTFET. The structure further includes a read port coupled with the storage element. The read port includes a read port pull-down (RPD) VTFET with a fin and a read port access (RPG) VTFET with a fin that is aligned in a third row with the fin of the RPG VTFET.

公开(公告)号：US10121713B1

公开(公告)日：2018-11-06

申请号：US15589126

申请日：2017-05-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Bipul C. Paul ,  Hajime Terazawa ,  Joseph Versaggi

IPC: H01L21/66 ,  H01L27/11 ,  G01R31/00 ,  G01R31/28

CPC classification number: H01L22/34 ,  G01R31/00 ,  G01R31/2856 ,  H01L22/14 ,  H01L27/1104

Abstract: Disclosed are an in-kerf test structure and testing method for testing an on-chip device. The structure includes at least one test component with at least one test device and adjoining dummy devices connected to the test device. Each adjoining dummy device has proximal node(s) directly connected to a test device and distal node(s) that are not directly connected to a test device. The nodes of each test device and the distal nodes of each adjoining dummy device are connected to input/output pads. During testing the input/output pads are used to bias the nodes of a selected test device as well as the distal node(s) of any adjoining dummy device. By biasing the distal node(s) of an adjoining dummy device, random accumulation of potential thereon is avoided and current contributions from the adjoining dummy device(s) to a current measurement taken from the selected test device can be accurately determined.