公开(公告)号：US20150228585A1

公开(公告)日：2015-08-13

申请号：US14176716

申请日：2014-02-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming HE ,  Larry ZHAO

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/3213 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a self-forming barrier with an integrated self-aligned metal cap, wherein the barrier is formed on all surfaces of the via, and the resulting device are provided. Embodiments include forming a metal line in a first Si-based dielectric layer; removing a portion of the metal line; depositing a metal cap over the metal line; forming a second Si-based dielectric layer on the first Si-based dielectric layer and the metal cap; forming a cavity in the second Si-based dielectric layer down to the metal cap; and depositing a barrier-forming layer on side and bottom surfaces of the cavity and over the second Si-based dielectric layer.

Abstract translation: 一种形成具有集成的自对准金属帽的自形成屏障的方法，其中所述屏障形成在所述通孔的所有表面上，并且提供所得到的装置。 实施例包括在第一Si基电介质层中形成金属线; 去除所述金属线的一部分; 在金属线上沉积金属盖; 在所述第一Si基电介质层和所述金属帽上形成第二Si基电介质层; 在所述第二Si基介电层中形成空腔，直到所述金属盖; 以及在所述腔的侧表面和底表面上以及在所述第二Si基介电层上方沉积阻挡层形成层。

公开(公告)号：US20140353805A1

公开(公告)日：2014-12-04

申请号：US13903618

申请日：2013-05-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Errol Todd RYAN ,  Moosung M. CHAE ,  Larry ZHAO ,  Kunaljeet TANWAR ,  Nicholas Vincent LICAUSI ,  Christian WITT ,  Ailian ZHAO ,  Ming HE ,  Sean X. LIN ,  Xunyuan ZHANG

IPC: H01L21/3105 ,  H01L23/00

CPC classification number: H01L21/02101 ,  H01L21/02063 ,  H01L21/76814

Abstract: A process is provided for the removal of contaminants from a semiconductor device, for example, removing contaminants from pores of an ultra-low k film. In one aspect, a method includes: providing a dielectric layer with contaminant-containing pores and exposing the dielectric layer to a supercritical fluid. The supercritical fluid can dissolve and remove the contaminants. In another aspect, an intermediate semiconductor device structure is provided that contains a dielectric layer with contaminant-containing pores and a supercritical fluid within the pores. In another aspect, a semiconductor device structure with a dielectric layer containing uncontaminated pores is provided.

Abstract translation: 提供了用于从半导体器件去除污染物的方法，例如从超低k膜的孔中除去污染物。 一方面，一种方法包括：向电介质层提供含有污染物的孔，并将介电层暴露于超临界流体。 超临界流体可以溶解和去除污染物。 在另一方面，提供了一种中间半导体器件结构，其包含具有含污染孔的电介质层和孔内的超临界流体。 另一方面，提供了具有含有未污染孔的电介质层的半导体器件结构。

公开(公告)号：US20160225712A1

公开(公告)日：2016-08-04

申请号：US15098513

申请日：2016-04-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Moosung CHAE ,  Larry ZHAO

IPC: H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a barrier on both the sidewalls and bottom of a via and the resulting device are provided. Embodiments include forming a metal line in a substrate; forming a Si-based insulating layer over the metal line and the substrate; forming a via in the Si-based insulating layer down to the metal line; forming a dual-layer Mn/MnN on sidewalls and a bottom surface of the via; and filling the via with metal.

公开(公告)号：US20150108646A1

公开(公告)日：2015-04-23

申请号：US14059498

申请日：2013-10-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Moosung CHAE ,  Larry ZHAO

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a barrier on both the sidewalls and bottom of a via and the resulting device are provided. Embodiments include forming a metal line in a substrate; forming a Si-based insulating layer over the metal line and the substrate; forming a via in the Si-based insulating layer down to the metal line; forming a dual-layer Mn/MnN on sidewalls and a bottom surface of the via; and filling the via with metal.

Abstract translation: 提供了在通孔的侧壁和底部上形成阻挡层的方法以及所得到的器件。 实施例包括在基板中形成金属线; 在金属线和基板上形成Si基绝缘层; 在所述Si基绝缘层中形成通孔至所述金属线; 在通孔的侧壁和底表面上形成双层Mn / MnN; 并用金属填充通孔。

公开(公告)号：US20140353802A1

公开(公告)日：2014-12-04

申请号：US13903802

申请日：2013-05-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Nicholas Vincent LICAUSI ,  Errol Todd RYAN ,  Ming HE ,  Moosung M. CHAE ,  Kunaljeet TANWAR ,  Larry ZHAO ,  Christian WITT ,  Ailian ZHAO ,  Sean X. LIN ,  Xunyuan ZHANG

IPC: H01L21/314 ,  H01L21/32 ,  H01L21/308 ,  H01L29/06

CPC classification number: H01L21/314 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L29/06 ,  H01L2221/1047

Abstract: A process is provided for methods of reducing damage to an ultra-low k layer during fabrication. In one aspect, a method includes: providing a cured ultra-low k film containing pores filled with a pore-stuffing material; and modifying an exposed surface of the ultra-low k film to provide a modified layer in the ultra-low k film. In another aspect, a semiconductor device comprising a modified layer on a surface of an ultra-low k film is provided.

Abstract translation: 提供了一种在制造期间减少对超低k层的损伤的方法的方法。 一方面，一种方法包括：提供含有填充有孔填充材料的孔的固化的超低k膜; 以及改变超低k膜的暴露表面以在超低k膜中提供改性层。 在另一方面，提供一种在超低k膜的表面上包含改性层的半导体器件。