摘要:
The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要:
The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要:
The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer, forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要:
An object of the invention is to provide a method for manufacturing a thin film transistor in a self-aligning manner by using the droplet discharging method regardless of the accuracy of a discharge position for a droplet discharging device. In view of the object, an organic resin film or the like is applied and processed into a predetermined shape by etch-back, exposure, development and the like. By utilizing the organic resin film with the predetermined shape as a mask, a semiconductor layer containing an impurity of one conductivity type is etched. By utilizing the organic resin film with the predetermined shape, regions with different wettabilities are formed.
摘要:
The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.
摘要:
The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.
摘要:
Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
摘要:
The purpose of the present invention is to provide a semiconductor device or a display device that can be manufactured by improving the use efficiency of a material as well as simplifying the manufacturing process, and a manufacturing technique of those devices. Also, another purpose of the present invention is to provide a technique for forming a pattern of wirings, etc., constituting the semiconductor device or the display device, in a desired shape and with good adhesiveness. The adhesiveness between first and second conductive layers is increased by forming a conductive buffer layer including at least one pore between them. The second conductive layer is formed by filling the pores of the buffer layer including at least one pore with a particle shaped conductive material which is solidified by baking. The conductive layer solidified in the pores functions like a wedge, and the second conductive layer is formed over the first conductive layer with good adhesiveness and stability.
摘要:
It is an object of the present invention to provide a method for manufacturing a substrate having film patterns such as an insulating film, a semiconductor film, and a conductive film in simple processes. It is another object of the invention to provide a method for manufacturing a semiconductor device with high throughput and high yield at low cost. A method for manufacturing a semiconductor device including the steps of: forming a first film over a substrate; discharging a solution containing a mask material to the first film thereby forming a mask over the first film; patterning the first film with the use of the mask thereby forming low wettability regions and a high wettability region over the substrate; removing the mask; and discharging a solution containing a material of an insulating film, a semiconductor film, or a conductive film to the high wettability region provided between the low wettability regions thereby forming a pattern of the insulating film, the semiconductor film, or the conductive film.
摘要:
Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.