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公开(公告)号：US09416005B2
公开(公告)日：2016-08-16
申请号：US12995000
申请日：2009-07-22
CPC分类号： B82Y10/00 , G06N99/002
摘要： A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T2 at room temperature of about 300 μs or more and wherein the host material comprises a layer of single crystal CVD diamond having a total nitrogen concentration of about 20 ppb or less, wherein the surface roughness, Rq of the single crystal diamond within an area defined by a circle of radius of about 5 μm centered on the point on the surface nearest to where the quantum spin defect is formed is about 10 nm or less, methods for preparing solid state systems and the use of single crystal diamond having a total nitrogen concentration of about 20 ppb or less in spintronic applications are described.
摘要翻译： 一种包含主体材料和量子自旋缺陷的固态系统，其中所述量子自旋缺陷在室温下具有约300μs或更大的T2，并且其中所述主体材料包括总氮浓度为 约20ppb或更小，其中在以最接近形成量子自旋缺陷的表面上的点为中心的由半径为约5μm的半径定义的区域内的单晶金刚石的表面粗糙度Rq为约10nm 描述了在自旋电子应用中制备固态体系的方法和使用总氮浓度为约20ppb或更低的单晶金刚石。
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公开(公告)号：US09317811B2
公开(公告)日：2016-04-19
申请号：US12995005
申请日：2009-07-22
CPC分类号： G06N99/002 , B82Y10/00 , C30B25/105 , C30B25/20 , C30B29/04 , C30B31/22 , C30B33/02
摘要： Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system comprising such single crystal diamond are described.
摘要翻译： 描述了具有高化学纯度，即低氮含量和高同位素纯度，即13C含量低的单晶金刚石，其制备方法和包含这种单晶金刚石的固态体系。
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公开(公告)号：US09249526B2
公开(公告)日：2016-02-02
申请号：US14111550
申请日：2012-05-01
CPC分类号： C30B29/04 , C30B25/02 , C30B31/22 , C30B33/00 , G06N99/002
摘要： A synthetic single crystal diamond material comprising: a first region comprising electron donor defects; a second region comprising quantum spin defects; and a third region between the first and second regions. The second and third regions have a lower concentration of electron donor defects than the first region. The first and second regions are sufficiently close to allow electrons to be donated from the first region to the second region, thus forming negatively charged quantum spin defects in the second and positively charged defects in the first region, and sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region.
摘要翻译： 一种合成单晶金刚石材料，包括：包含电子供体缺陷的第一区域; 包括量子自旋缺陷的第二区域; 以及第一和第二区域之间的第三区域。 第二和第三区域的电子供体缺陷浓度比第一区域低。 第一和第二区域足够接近以允许电子从第一区域捐赠到第二区域，从而在第一区域中的第二和带正电的缺陷中形成带负电的量子自旋缺陷，并且足够远的距离以减少其它耦合 第一和第二区域之间的相互作用，否则将过度地减少多个量子自旋缺陷的去相干时间和/或产生第二区域中的多个量子自旋缺陷的谱线宽度的应变扩大。
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公开(公告)号：US20120051996A1
公开(公告)日：2012-03-01
申请号：US12995005
申请日：2009-07-22
CPC分类号： G06N99/002 , B82Y10/00 , C30B25/105 , C30B25/20 , C30B29/04 , C30B31/22 , C30B33/02
摘要： Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system comprising such single crystal diamond are described.
摘要翻译： 描述了具有高化学纯度，即低氮含量和高同位素纯度，即13C含量低的单晶金刚石，其制备方法和包含这种单晶金刚石的固态体系。
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公开(公告)号：US20110163291A1
公开(公告)日：2011-07-07
申请号：US12995000
申请日：2009-07-22
CPC分类号： B82Y10/00 , G06N99/002
摘要： A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T2 at room temperature of about 300 μs or more and wherein the host material comprises a layer of single crystal CVD diamond having a total nitrogen concentration of about 20 ppb or less, wherein the surface roughness, Rq of the single crystal diamond within an area defined by a circle of radius of about 5 μm centred on the point on the surface nearest to where the quantum spin defect is formed is about 10 nm or less, methods for preparing solid state systems and the use of single crystal diamond having a total nitrogen concentration of about 20 ppb or less in spintronic applications are described.
摘要翻译： 一种包含主体材料和量子自旋缺陷的固态系统，其中所述量子自旋缺陷在室温下具有约300μs或更大的T2，并且其中所述主体材料包括总氮浓度为 约20ppb或更小，其中在以最接近形成量子自旋缺陷的表面上的点为中心的由半径为约5μm的半径定义的区域内的单晶金刚石的表面粗糙度Rq为约10nm 描述了在自旋电子应用中制备固态体系的方法和使用总氮浓度为约20ppb或更低的单晶金刚石。
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公开(公告)号：US09637838B2
公开(公告)日：2017-05-02
申请号：US13994922
申请日：2011-12-14
申请人： Steven Edward Coe , Jonathan James Wilman , Helen Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort , Matthew Lee Markham
发明人： Steven Edward Coe , Jonathan James Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort , Matthew Lee Markham
CPC分类号： C30B25/14 , C01B32/25 , C23C16/274 , C23C16/278 , C30B25/02 , C30B25/165 , C30B29/04 , H01J37/32192 , H01J37/32449
摘要： Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm3 per minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.
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公开(公告)号：US20140037932A1
公开(公告)日：2014-02-06
申请号：US14111550
申请日：2012-05-01
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B31/22 , C30B33/00 , G06N99/002
摘要： A synthetic single crystal diamond material comprising: a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects; a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region, wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, and wherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 μm which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second region of synthetic single crystal diamond material and positively charged defects in the first region of synthetic single crystal diamond material while being sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region of synthetic single crystal diamond material.
摘要翻译： 一种合成单晶金刚石材料，包括：合成单晶金刚石材料的第一区域，其包含多个电子供体缺陷; 包括多个量子自旋缺陷的合成单晶金刚石材料的第二区域; 以及设置在第一和第二区域之间的合成单晶金刚石材料的第三区域，使得第一和第二区域被第三区域间隔开，其中合成单晶金刚石材料的第二和第三区域具有较低的电子浓度 施主缺陷比合成单晶金刚石材料的第一区域，并且其中第一和第二区域间隔开10nm至100μm的范围内的距离，其足够接近以允许从合成的第一区域捐赠电子 单晶金刚石材料到合成单晶金刚石材料的第二区域，从而在合成单晶金刚石材料的第二区域中形成带负电荷的量子自旋缺陷和合成单晶金刚石材料的第一区域中的带正电荷的缺陷，同时足够远的距离 以减少第一和第二之间的其他耦合相互作用 否则会不适当地减少多个量子自旋缺陷的去相干时间和/或在合成单晶金刚石材料的第二区域中产生多个量子自旋缺陷的谱线宽度的应变拓宽。
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公开(公告)号：US08758509B2
公开(公告)日：2014-06-24
申请号：US14115815
申请日：2012-05-10
IPC分类号： C30B29/04
CPC分类号： H01L29/1602 , B82Y10/00 , C30B29/04 , C30B29/64 , C30B31/22 , C30B33/08 , G01N24/10 , G01R33/24 , G01R33/302 , G01R33/60 , G06N99/002 , H01L21/0405 , H01L29/157 , H01L29/167
摘要： A thin plate of synthetic single crystal diamond material, the thin plate of synthetic single crystal diamond material having: a thickness in a range 100 nm to 50 μιη; a concentration of quantum spin defects greater than 0.1 ppb (parts-per-billion); a concentration of point defects other than the quantum spin defects of below 200 ppm (parts-per-million); and wherein at least one major face of the thin plate of synthetic single crystal diamond material comprises surface termination species which have zero nuclear spin and/or zero electron spin.
摘要翻译： 合成单晶金刚石材料的薄板，合成单晶金刚石材料薄板具有：厚度在100nm至50μm的范围内; 量子自旋缺陷的浓度大于0.1ppb（十亿分之一）; 量子自旋缺陷以外的点缺陷浓度低于200ppm（百万分之一）; 并且其中所述合成单晶金刚石材料薄板的至少一个主面包括具有零核自旋和/或零电子自旋的表面终止物质。
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公开(公告)号：US20130270991A1
公开(公告)日：2013-10-17
申请号：US13811262
申请日：2011-08-02
CPC分类号： F21V5/00 , B82Y20/00 , C30B25/02 , C30B29/04 , G02B1/02 , H01L33/58 , Y10T428/24355 , Y10T428/24612 , Y10T428/24628 , Y10T428/26
摘要： A method of manufacturing an optical element, the method comprising: growing a first layer of single crystal diamond material via a chemical vapour deposition technique using a gas phase having a first nitrogen concentration; growing a second layer of single crystal diamond material over said first layer via a chemical vapour deposition technique using a gas phase having a second nitrogen concentration, wherein the second nitrogen concentration is lower than the first nitrogen concentration; forming an optical element from at least a portion of the second layer of single crystal diamond material; and forming an out-coupling structure at a surface of the optical element for increasing out-coupling of light.
摘要翻译： 一种制造光学元件的方法，所述方法包括：通过使用具有第一氮浓度的气相的化学气相沉积技术生长第一层单晶金刚石材料; 通过使用具有第二氮浓度的气相的化学气相沉积技术在所述第一层上生长第二层单晶金刚石材料，其中第二氮浓度低于第一氮浓度; 从所述第二层单晶金刚石材料的至少一部分形成光学元件; 以及在所述光学元件的表面处形成出耦合结构，以增加光的耦合。
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公开(公告)号：US08686377B2
公开(公告)日：2014-04-01
申请号：US14115031
申请日：2012-05-04
IPC分类号： B82Y20/00
CPC分类号： C30B29/04 , C30B25/105
摘要： A single crystal synthetic CVD diamond material comprising: a growth sector; and a plurality of point defects of one or more type within the growth sector, wherein at least one type of point defect is preferentially aligned within the growth sector, wherein at least 60% of said at least one type of point defect shows said preferential alignment, and wherein the at least one type of point defect is a negatively charged nitrogen-vacancy defect (NV−).
摘要翻译： 一种单晶合成CVD金刚石材料，包括：生长部分; 以及生长扇区内的一种或多种类型的多个点缺陷，其中至少一种类型的点缺陷优先地在所述生长扇区内对齐，其中所述至少一种类型的点缺陷的至少60％表示所述优先对准 ，并且其中所述至少一种类型的点缺陷是带负电的氮空位缺陷（NV-）。
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