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    Ion implantation apparatus and a method
    3.
    发明授权
    Ion implantation apparatus and a method 有权
    离子注入装置及方法

    公开(公告)号：US07989784B2

    公开(公告)日：2011-08-02

    申请号：US12494270

    申请日：2009-06-30

    申请人： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick ,  Kenneth Harry Purser

    发明人： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick ,  Kenneth Harry Purser

    IPC分类号： H01J37/317 ,  H01J37/20

    CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J37/20 ,  H01J2237/057 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166 ,  H01J2237/2001 ,  H01J2237/2006 ,  H01J2237/201 ,  H01J2237/202

    摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.

    摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正，以补偿从轮轴的径向距离对晶片的一部分通过带状束的速度的依赖性。

    ION IMPLANTATION APPARATUS AND A METHOD
    4.
    发明申请
    ION IMPLANTATION APPARATUS AND A METHOD 有权
    离子植入装置和方法

    公开(公告)号：US20100327190A1

    公开(公告)日：2010-12-30

    申请号：US12494270

    申请日：2009-06-30

    申请人： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick ,  Kenneth Harry Purser

    发明人： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick ,  Kenneth Harry Purser

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J37/20 ,  H01J2237/057 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166 ,  H01J2237/2001 ,  H01J2237/2006 ,  H01J2237/201 ,  H01J2237/202

    摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.

    摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正，以补偿与轮轴的径向距离对晶圆部分通过带状束的速度的依赖性。

    Ion source assembly for ion implantation apparatus and a method of generating ions therein
    5.
    发明授权
    Ion source assembly for ion implantation apparatus and a method of generating ions therein 有权
    用于离子注入装置的离子源组件及其中产生离子的方法

    公开(公告)号：US07939812B2

    公开(公告)日：2011-05-10

    申请号：US12494272

    申请日：2009-06-30

    申请人： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick

    发明人： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick

    IPC分类号： H01J37/317 ,  H01J37/08 ,  H01J27/02 ,  H01J1/50

    CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J2237/083

    摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ion source may use core-less saddle type coils to provide a uniform field confining the plasma in the ion source. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon.

    摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 离子源可以使用无芯鞍型线圈来提供限制离子源中的等离子体的均匀场。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。

    ION SOURCE ASSEMBLY FOR ION IMPLANTATION APPARATUS AND A METHOD OF GENERATING IONS THEREIN
    6.
    发明申请
    ION SOURCE ASSEMBLY FOR ION IMPLANTATION APPARATUS AND A METHOD OF GENERATING IONS THEREIN 有权
    用于离子植入装置的离子源组件及其产生离子的方法

    公开(公告)号：US20100327178A1

    公开(公告)日：2010-12-30

    申请号：US12494272

    申请日：2009-06-30

    申请人： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick

    发明人： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick

    IPC分类号： H01J1/50 ,  H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J2237/083

    摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ion source may use core-less saddle type coils to provide a uniform field confining the plasma in the ion source. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon.

    摘要翻译： 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 离子源可以使用无芯鞍型线圈来提供限制等离子体在离子源中的均匀场。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。

    Ion implanting apparatus
    9.
    发明申请
    Ion implanting apparatus 有权
    离子注入装置

    公开(公告)号：US20050253089A1

    公开(公告)日：2005-11-17

    申请号：US10845209

    申请日：2004-05-14

    申请人： Syuichi Maeno ,  Masao Naito ,  Yasunori Ando ,  Hilton Glavish

    发明人： Syuichi Maeno ,  Masao Naito ,  Yasunori Ando ,  Hilton Glavish

    IPC分类号： H01J37/317 ,  G01N21/00 ,  H01L21/265

    CPC分类号： H01J37/3171 ,  H01J2237/0455 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/20228 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01L21/26513 ,  H01L21/2658

    摘要： The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.

    摘要翻译： 根据本发明的离子注入装置包括：用于产生包括所需离子种类的离子束20的离子源，并且成形为具有比衬底82的窄宽度更长的宽度的片材;质量分离磁体36，用于选择性地导出 通过在与其表面垂直的方向上弯曲离子束来形成期望的离子种类，通过与质量分离磁体36配合选择性地使期望的离子种类通过的分离狭缝72和用于往复驱动的衬底驱动装置86 基板82在离开光束20的已经通过分离狭缝72的照射区域内与离子束20的片表面20s基本垂直的方向。

    Apparatus and method for charged particle filtering and ion implantation
    10.
    发明授权
    Apparatus and method for charged particle filtering and ion implantation 有权
    带电粒子滤波和离子注入的装置和方法

    公开(公告)号：US06639227B1

    公开(公告)日：2003-10-28

    申请号：US09691842

    申请日：2000-10-18

    申请人： Hilton Glavish ,  Causon Ko-Chuan Jen

    发明人： Hilton Glavish ,  Causon Ko-Chuan Jen

    IPC分类号： H01J37317

    CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J2237/03 ,  H01J2237/055

    摘要： A charged particle filter provides a curved through path and has both magnetic poles for applying a magnetic field normal to the plane of curvature of the path and electrodes for applying a radial electric field. The filter is used as an energy filter downstream of an accelerator in an ion implanter. The filter can be set to provide a range of energy dispersions, to operate as an achromatic bend, or to reject lower charge state ions.

    摘要翻译： 带电粒子滤波器提供弯曲通路，并且具有用于施加垂直于路径曲面的磁场的磁极和用于施加径向电场的电极的两个磁极。 过滤器用作离子注入机中加速器下游的能量过滤器。 过滤器可以设置为提供一系列能量分散体，作为消色差弯曲进行操作，或者抑制较低电荷状态的离子。