公开(公告)号：US20050156229A1

公开(公告)日：2005-07-21

申请号：US11014661

申请日：2004-12-16

申请人： Geoffrey Yeap ,  Srinivas Jallepalli ,  Yongjoo Jeon ,  James Burnett ,  Rana Singh ,  Paul Grudowski

发明人： Geoffrey Yeap ,  Srinivas Jallepalli ,  Yongjoo Jeon ,  James Burnett ,  Rana Singh ,  Paul Grudowski

IPC分类号： H01L21/336 ,  H01L21/8239 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11541 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833

摘要： A semiconductor device has recesses formed in the substrate during removal of the anti-reflective coating (ARC) because these recess locations are exposed during the etching of the ARC. Although the etchant is chosen to be selective between the ARC material and the substrate material, this selectivity is limited so that recesses do occur. A problem associated with the formation of these recesses is that the source/drains have further to diffuse to become overlapped with the gate. The result is that the transistors may have reduced current drive. The problem is avoided by waiting to perform the ARC removal until at least after formation of a sidewall spacer around the gate. The consequent recess formation thus occurs further from the gate, which results in reducing or eliminating the impediment this recess can cause to the source/drain diffusion that desirably extends to overlap with the gate.

公开(公告)号：US20070158764A1

公开(公告)日：2007-07-12

申请号：US11328594

申请日：2006-01-10

申请人： Marius Orlowski ,  James Burnett

发明人： Marius Orlowski ,  James Burnett

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/785 ,  H01L21/823431 ,  H01L29/66795

摘要： An electronic device can include an insulating layer and a fin-type transistor structure. The fin-type structure can have a semiconductor fin and a gate electrode spaced apart from each other. A dielectric layer and a spacer structure can lie between the semiconductor fin and the gate electrode. The semiconductor fin can include channel region including a portion associated with a relatively higher VT lying between a portion associated with a relatively lower VT and the insulating layer. In one embodiment, the supply voltage is lower than the relatively higher VT of the channel region. A process for forming the electronic device is also disclosed.

摘要翻译： 电子器件可以包括绝缘层和鳍型晶体管结构。 翅片型结构可以具有彼此间隔开的半导体翅片和栅电极。 电介质层和间隔结构可以位于半导体鳍片和栅电极之间。 半导体鳍片可以包括沟道区域，该沟道区域包括与相对较低V T T T相关的部分与绝缘层之间相对较高的V SUB相关联的部分。 在一个实施例中，电源电压低于沟道区的相对较高的V SUB。 还公开了一种用于形成电子器件的工艺。

公开(公告)号：US20070112049A1

公开(公告)日：2007-05-17

申请号：US11464007

申请日：2006-08-11

申请人： Sina Bavari ,  Rick Gussio ,  James Burnett

发明人： Sina Bavari ,  Rick Gussio ,  James Burnett

IPC分类号： A61K31/427 ,  A61K31/423 ,  A61K31/4184

CPC分类号： A61K31/4184 ,  A61K31/423 ,  A61K31/427 ,  A61K31/428 ,  C07D209/10 ,  C07D209/12 ,  C07D209/14 ,  C07D333/56 ,  C07D333/60 ,  C07D401/06 ,  C07D401/12 ,  C07D403/04 ,  C07D405/06 ,  C07D405/14 ,  C07D407/06 ,  C07D409/04 ,  Y02A50/406 ,  Y02A50/473

摘要： Disclosed herein are methods of inhibiting the activity of Botulinum neurotoxin A metalloprotease with the compounds disclosed herein. Also disclosed are methods of treating, inhibiting or preventing intoxication caused by bacteria of at least one bacterial strain in a subject, and pharmaceutical and cosmetic compositions comprising the compounds disclosed herein.

摘要翻译： 本文公开的是使用本文公开的化合物抑制肉毒杆菌神经毒素A金属蛋白酶的活性的方法。 还公开了治疗，抑制或预防受试者中至少一种细菌菌株的细菌引起的中毒的方法，以及包含本文公开的化合物的药物和化妆品组合物。

公开(公告)号：US20050153945A1

公开(公告)日：2005-07-14

申请号：US10935622

申请日：2004-09-08

申请人： Sina Bavari ,  James Schmidt ,  James Burnett ,  Rick Gussio

发明人： Sina Bavari ,  James Schmidt ,  James Burnett ,  Rick Gussio

IPC分类号： A61K31/4709 ,  A61K31/473 ,  A61K31/555 ,  A61K31/63 ,  C07K20060101 ,  G01N33/48 ,  G01N33/50 ,  G01N33/53 ,  G06F19/00

CPC分类号： A61K31/635 ,  A61K31/47 ,  A61K31/4706 ,  A61K45/06 ,  G06F19/705 ,  G06F19/706 ,  A61K2300/00

摘要： Disclosed herein is a pharmacophore model for inhibiting Botulinum neurotoxin A metalloprotease activity which comprises a first plane A, a second plane B, a first hydrophobic moiety C, a second hydrophobic moiety D and a positive ionizable substituent E. The pharmacophore model may further comprise a heteroatom in the first plane A. In some embodiments, the distance between the center of the first plane A and the center of the second plane B is about 6.5 to about 9.5 Å. In some embodiments, the distance between the center of the first hydrophobic moiety C and the center of the second hydrophobic moiety D is about 8.0 to about 16.0 Å. In some embodiments, the distance between the center of the first plane to the center of the first hydrophobic moiety C is about 3.0 to about 5.0 Å. In some embodiments, the distance between the center of the second plane to the center of the second hydrophobic moiety C is about 3.0 to about 5.0 Å. In some embodiments, the distance between the center of the first plane to the center of the positive ionizable substituent is about 6.5 to about 9.5 Å.

摘要翻译： 本文公开了用于抑制肉毒杆菌神经毒素A金属蛋白酶活性的药效团模型，其包含第一平面A，第二平面B，第一疏水部分C，第二疏水部分D和可阳离子化取代基E.药效基团模型还可包含 在一些实施例中，第一平面A的中心与第二平面B的中心之间的距离为约6.5至约9.5。 在一些实施方案中，第一疏水部分C的中心与第二疏水部分D的中心之间的距离为约8.0至约16.0。 在一些实施方案中，第一平面的中心与第一疏水部分C的中心之间的距离为约3.0至约5.0。 在一些实施方案中，第二平面的中心与第二疏水部分C的中心之间的距离为约3.0至约5.0。 在一些实施方案中，第一平面的中心与正电离取代基的中心之间的距离为约6.5至约9.5。

公开(公告)号：US20070211526A1

公开(公告)日：2007-09-13

申请号：US11373532

申请日：2006-03-10

申请人： James Burnett

发明人： James Burnett

IPC分类号： G11C11/34 ,  G11C11/00

CPC分类号： G11C11/413 ,  G11C7/02 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/66795 ,  H01L29/785

摘要： A device is disclosed having a first Field Effect Transistor having a channel region controlled by a gate, a second Field Effect Transistor having a first channel region substantially controlled by a first gate, and a second channel region substantially controlled by a second gate. The gate of the first Field Effect Transistor and the first gate of the second Field Effect Transistor are coupled to a memory write line. The second gate of the second Field Effect Transistor receives a control signal from a memory bit cell.

摘要翻译： 公开了一种具有第一场效应晶体管的器件，其具有由栅极控制的沟道区域，第二场效应晶体管具有基本由第一栅极控制的第一沟道区域和由第二栅极基本控制的第二沟道区域。 第一场效应晶体管的栅极和第二场效应晶体管的第一栅极耦合到存储器写入线。 第二场效应晶体管的第二栅极从存储器位单元接收控制信号。

公开(公告)号：US20070093054A1

公开(公告)日：2007-04-26

申请号：US11257972

申请日：2005-10-25

申请人： Byoung Min ,  James Burnett ,  Leo Mathew

发明人： Byoung Min ,  James Burnett ,  Leo Mathew

IPC分类号： H01L21/4763 ,  H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L27/1104 ,  H01L21/823431 ,  H01L27/11 ,  H01L29/66795 ,  H01L29/785

摘要： A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括形成具有在垂直有源区两侧延伸的垂直有源区和水平有源区的第一晶体管。 该方法还包括形成具有垂直有源区的第二晶体管。 该方法还包括形成具有垂直有源区和仅在垂直有源区的一侧上延伸的水平有源区的第三晶体管。

公开(公告)号：US20070089662A1

公开(公告)日：2007-04-26

申请号：US11538288

申请日：2006-10-03

申请人： James Burnett

发明人： James Burnett

IPC分类号： B63B3/00

CPC分类号： B63B3/16 ,  B63B9/04

摘要： A stainless-steel boat hull system and method. Exemplary embodiments include a method of maintaining steel-hulled boats, including accessing a steel boat hull, removing surface layers of the boat hull, identifying structurally supportive layers of the boat hull, priming the boat hull, attaching pre-selected stainless steel plates to the boat hull in an overlapped arrangement and connecting adjacent stainless steel plates.

摘要翻译： 不锈钢船体系统及方法。 示例性实施例包括维持钢船的方法，包括进入钢船体，移除船体的表面层，识别船体的结构上支撑层，起动船体，将预先选定的不锈钢板连接到 船体重叠布置并连接相邻的不锈钢板。

公开(公告)号：US20070057329A1

公开(公告)日：2007-03-15

申请号：US11222544

申请日：2005-09-09

申请人： Sinan Goktepeli ,  James Burnett

发明人： Sinan Goktepeli ,  James Burnett

IPC分类号： H01L21/8238 ,  H01L29/76

CPC分类号： H01L21/823814

摘要： A method for forming a semiconductor device is provided. The method includes forming a n-type well region. The method further includes forming a gate corresponding to the semiconductor device on top of the n-type well region. The method further includes forming a source-drain extension region on each side of the gate in the n-type well region using a p-type dopant. The method further includes doping the source-drain extension region on each side of the gate in the n-type well region using a n-type dopant such that the n-type dopant is substantially encompassed within the source-drain extension region. The method further includes forming a source and a drain corresponding to the semiconductor device.

摘要翻译： 提供一种形成半导体器件的方法。 该方法包括形成n型阱区域。 该方法还包括在n型阱区域的顶部上形成与半导体器件对应的栅极。 该方法还包括使用p型掺杂剂在n型阱区域中的栅极的每一侧上形成源极 - 漏极延伸区域。 该方法还包括使用n型掺杂剂在n型阱区域中的栅极的每侧上掺杂源极 - 漏极延伸区域，使得n型掺杂剂基本上包围在源极 - 漏极延伸区域内。 该方法还包括形成对应于半导体器件的源极和漏极。

公开(公告)号：US20070001162A1

公开(公告)日：2007-01-04

申请号：US11172570

申请日：2005-06-30

申请人： Marius Orlowski ,  James Burnett

发明人： Marius Orlowski ,  James Burnett

IPC分类号： H01L31/00

CPC分类号： H01L27/108 ,  G11C16/0408 ,  H01L27/10802 ,  H01L29/7841

摘要： A transistor fabrication method includes forming an electrode overlying a channel of a semiconductor on insulator (SOI) substrate. Source/drain structures are formed in the substrate on either side of the channel. The source/drain structures include a layer of a second semiconductor over a first semiconductor. The first and second semiconductors have different bandgaps. The second semiconductor extends under the gate electrode. The source/drain structures may be formed by doping the source/drain regions and etching the doped regions selectively to form voids. A film of the second semiconductor is then grown epitaxially to fill the void. A film of the first semiconductor may be grown to line the void before growing the second semiconductor. Alternatively, the second semiconductor is a continuous layer that extends through the channel body. A capping layer of the first semiconductor may lie over the second semiconductor in this embodiment.

公开(公告)号：US20060104107A1

公开(公告)日：2006-05-18

申请号：US10991910

申请日：2004-11-18

申请人： Scott Remington ,  James Burnett

发明人： Scott Remington ,  James Burnett

IPC分类号： G11C11/00

CPC分类号： G11C8/08 ,  G11C11/413

摘要： A static random access memory (14) has a normal mode of operation and a low voltage mode of operation. A memory array (15) includes memory cells (16) coupled to a first power supply node (VDD) for receiving a power supply voltage. A plurality of word line drivers is coupled to word lines of the memory array (15) and to a second power supply node (37). A word line driver voltage reduction circuit (36) has an input coupled to the first power supply node (VDD) and an output coupled to the second power supply node (37) for reducing a voltage on the output in relation to a voltage on the input in response to a low power supply voltage signal, and thus improving a static noise margin of the memory cells (16).

摘要翻译： 静态随机存取存储器（14）具有正常操作模式和低电压操作模式。 存储器阵列（15）包括耦合到用于接收电源电压的第一电源节点（V SUB DD）的存储器单元（16）。 多个字线驱动器耦合到存储器阵列（15）的字线和第二电源节点（37）。 字线驱动器电压降低电路（36）具有耦合到第一电源节点（V SUB DD）的输入端和耦合到第二电源节点（37）的输出端，用于降低第 响应于低电源电压信号输出相对于输入端的电压，从而改善存储单元（16）的静态噪声容限。