REMOVAL OF PROCESS RESIDUES ON THE BACKSIDE OF A SUBSTRATE
    1.
    发明申请
    REMOVAL OF PROCESS RESIDUES ON THE BACKSIDE OF A SUBSTRATE 失效
    去除基板背面的工艺残留物

    公开(公告)号:US20080194111A1

    公开(公告)日:2008-08-14

    申请号:US11695918

    申请日:2007-04-03

    IPC分类号: H01L21/461 C23F1/00

    CPC分类号: H01L21/0209

    摘要: A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.

    摘要翻译: 衬底在包括衬底支撑件的处理室中进行处理,所述衬底支撑件具有用于接收衬底的接收表面,使得衬底的前表面暴露在腔室内。 使用赋能的工艺气体来处理衬底的前表面。 通过将基板支撑体的接收表面上方的基板升高到升高位置来清洁基板的背面的周边边缘,并且将基板的背面暴露于通电的清洁气体。

    Removal of process residues on the backside of a substrate
    2.
    发明授权
    Removal of process residues on the backside of a substrate 失效
    去除衬底背面的工艺残留物

    公开(公告)号:US08083963B2

    公开(公告)日:2011-12-27

    申请号:US11695918

    申请日:2007-04-03

    IPC分类号: H01L21/461 C23F1/00

    CPC分类号: H01L21/0209

    摘要: A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.

    摘要翻译: 衬底在包括衬底支撑件的处理室中进行处理,所述衬底支撑件具有用于接收衬底的接收表面,使得衬底的前表面暴露在腔室内。 使用赋能的工艺气体来处理衬底的前表面。 通过将基板支撑体的接收表面上方的基板升高到升高位置来清洁基板的背面的周边边缘,并且将基板的背面暴露于通电的清洁气体。

    Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material
    3.
    发明授权
    Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material 失效
    等离子体电介质蚀刻工艺,包括用于低介电常数材料的非原位背面聚合物去除

    公开(公告)号:US07276447B1

    公开(公告)日:2007-10-02

    申请号:US11402074

    申请日:2006-04-11

    IPC分类号: H01L21/311

    摘要: A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluoro-carbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluoro-carbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.

    摘要翻译: 首先在蚀刻反应器中进行用于使用光致抗蚀剂掩模蚀刻多孔碳掺杂氧化硅介电层的等离子体蚀刻工艺,通过在工件上执行基于氟碳的蚀刻工艺来蚀刻介电层的暴露部分,同时沉积保护性 氟碳聚合物在光致抗蚀剂掩模上。 然后,在灰化反应器中,通过将工件加热到超过100摄氏度,去除聚合物和光致抗蚀剂,暴露所述工件背面的周边部分,并提供来自氢处理气体的等离子体的产物,以减少 聚合物和光致抗蚀剂,直到聚合物已从所述工件的背面去除。 处理气体优选含有氢气和水蒸汽,尽管主要成分是氢气。 晶片(工件)背面可以通过延伸晶片提升销来暴露。

    PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLYMER REMOVAL FOR LOW-DIELECTRIC CONSTANT MATERIAL
    4.
    发明申请
    PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLYMER REMOVAL FOR LOW-DIELECTRIC CONSTANT MATERIAL 失效
    等离子体电介质蚀刻工艺,包括用于低介电常数材料的EX-SITU BACKSIDE POLMMER REMOVAL

    公开(公告)号:US20070238305A1

    公开(公告)日:2007-10-11

    申请号:US11402074

    申请日:2006-04-11

    IPC分类号: H01L21/302 H01L21/461

    摘要: A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluorocarbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluorocarbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.

    摘要翻译: 首先在蚀刻反应器中进行用于蚀刻使用光致抗蚀剂掩模的多孔碳掺杂氧化硅电介质层的等离子体蚀刻工艺,通过在工件上执行基于碳氟化合物的蚀刻工艺来蚀刻介电层的暴露部分,同时沉积保护性氟碳聚合物 在光刻胶掩模上。 然后,在灰化反应器中,通过将工件加热到超过100摄氏度,去除聚合物和光致抗蚀剂,暴露所述工件背面的周边部分,并提供来自氢处理气体的等离子体的产物,以减少包含在 聚合物和光致抗蚀剂,直到聚合物已从所述工件的背面去除。 处理气体优选含有氢气和水蒸汽,尽管主要成分是氢气。 晶片(工件)背面可以通过延伸晶片提升销来暴露。

    Homodyne interferometer and method of sensing material
    6.
    发明授权
    Homodyne interferometer and method of sensing material 失效
    零差干涉仪和传感材料的方法

    公开(公告)号:US5900935A

    公开(公告)日:1999-05-04

    申请号:US995655

    申请日:1997-12-22

    IPC分类号: G01H9/00 G01B9/021

    CPC分类号: G01H9/00

    摘要: Faults, dimensions and other characteristics of a material or structure are sensed by a coherent beam's reflection from the material during ultrasonic or very fast vibration. The reflected beam acquires a phase substantially different from its original phase and from the phase of a reference beam split from the common source beam. The reflected beam and the reference beam are superimposed by diffraction in a multiple quantum well adaptive holographic beamsplitter, and the superimposed beams are detected by a photodetector capable of detecting small interference changes from ultrasonic surface displacements or perturbations. An apparatus and method defining an improved homodyne interferometer for performing the method is described.

    摘要翻译: 材料或结构的故障,尺寸和其他特性在超声波或非常快速的振动期间通过相干光束从材料的反射来感测。 反射光束获得与其原始相位大致不同的相位,并且从与公共源光束分离的参考光束的相位获得相位。 反射光束和参考光束通过衍射叠加在多量​​子阱自适应全息分光器中,并且叠加的光束由能够从超声表面位移或扰动中检测小的干涉变化的光电检测器检测。 描述了一种定义用于执行该方法的改进的零差干涉仪的装置和方法。

    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
    7.
    发明授权
    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
    用于减少沿着衬底支撑件的可移动轴夹带异物的装置

    公开(公告)号:US07582167B2

    公开(公告)日:2009-09-01

    申请号:US11866505

    申请日:2007-10-03

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    CPC分类号: H01L21/67126 C23C16/4401

    摘要: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译: 在一个实施例中,本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中,保护环包括大致环形的保护环,其定位在形成在套筒内的步骤中,该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙,使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中,保护环包括具有内周边和外周边的基部,连接到内周边的第一凸缘,联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
    8.
    发明授权
    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
    用于减少沿着衬底支撑件的可移动轴夹带异物的装置

    公开(公告)号:US07279049B2

    公开(公告)日:2007-10-09

    申请号:US10775769

    申请日:2004-02-05

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    CPC分类号: H01L21/67126 C23C16/4401

    摘要: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译: 在一个实施例中,本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中,保护环包括大致环形的保护环,其定位在形成在套筒内的步骤中,该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙,使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中,保护环包括具有内周边和外周边的基部,连接到内周边的第一凸缘,联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
    9.
    发明申请
    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
    用于减少沿着衬底支撑件的可移动轴夹带异物的装置

    公开(公告)号:US20050172905A1

    公开(公告)日:2005-08-11

    申请号:US10775769

    申请日:2004-02-05

    IPC分类号: C23C16/00 C23C16/44 H01L21/00

    CPC分类号: H01L21/67126 C23C16/4401

    摘要: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译: 在一个实施例中,本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中,保护环包括大致环形的保护环,其定位在形成在套筒内的步骤中,该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙,使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中,保护环包括具有内周边和外周边的基部,连接到内周边的第一凸缘,联接到外周边的第二凸缘以及将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

    APPARATUS FOR REDUCING ENTRAPMENT OF FOREIGN MATTER ALONG A MOVEABLE SHAFT OF A SUBSTRATE SUPPORT
    10.
    发明申请
    APPARATUS FOR REDUCING ENTRAPMENT OF FOREIGN MATTER ALONG A MOVEABLE SHAFT OF A SUBSTRATE SUPPORT 失效
    用于减少基板支撑的可移动轴的外来物件的形成的装置

    公开(公告)号:US20080017115A1

    公开(公告)日:2008-01-24

    申请号:US11866505

    申请日:2007-10-03

    IPC分类号: C23C16/00

    CPC分类号: H01L21/67126 C23C16/4401

    摘要: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译: 在一个实施例中,本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中,保护环包括大致环形的保护环,其定位在形成在套筒内的步骤中,该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙,使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中,保护环包括具有内周边和外周边的基部,连接到内周边的第一凸缘,联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。