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1.发明授权Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material 失效等离子体电介质蚀刻工艺，包括用于低介电常数材料的非原位背面聚合物去除公开(公告)号：US07276447B1
公开(公告)日：2007-10-02
申请号：US11402074
申请日：2006-04-11
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32357 , H01L21/0209
摘要： A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluoro-carbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluoro-carbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.
摘要翻译： 首先在蚀刻反应器中进行用于使用光致抗蚀剂掩模蚀刻多孔碳掺杂氧化硅介电层的等离子体蚀刻工艺，通过在工件上执行基于氟碳的蚀刻工艺来蚀刻介电层的暴露部分，同时沉积保护性 氟碳聚合物在光致抗蚀剂掩模上。 然后，在灰化反应器中，通过将工件加热到超过100摄氏度，去除聚合物和光致抗蚀剂，暴露所述工件背面的周边部分，并提供来自氢处理气体的等离子体的产物，以减少 聚合物和光致抗蚀剂，直到聚合物已从所述工件的背面去除。 处理气体优选含有氢气和水蒸汽，尽管主要成分是氢气。 晶片（工件）背面可以通过延伸晶片提升销来暴露。
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公开(公告)号：US20080194111A1
公开(公告)日：2008-08-14
申请号：US11695918
申请日：2007-04-03
IPC分类号： H01L21/461 , C23F1/00
CPC分类号： H01L21/0209
摘要： A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.
摘要翻译： 衬底在包括衬底支撑件的处理室中进行处理，所述衬底支撑件具有用于接收衬底的接收表面，使得衬底的前表面暴露在腔室内。 使用赋能的工艺气体来处理衬底的前表面。 通过将基板支撑体的接收表面上方的基板升高到升高位置来清洁基板的背面的周边边缘，并且将基板的背面暴露于通电的清洁气体。
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公开(公告)号：US08083963B2
公开(公告)日：2011-12-27
申请号：US11695918
申请日：2007-04-03
IPC分类号： H01L21/461 , C23F1/00
CPC分类号： H01L21/0209
摘要： A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.
摘要翻译： 衬底在包括衬底支撑件的处理室中进行处理，所述衬底支撑件具有用于接收衬底的接收表面，使得衬底的前表面暴露在腔室内。 使用赋能的工艺气体来处理衬底的前表面。 通过将基板支撑体的接收表面上方的基板升高到升高位置来清洁基板的背面的周边边缘，并且将基板的背面暴露于通电的清洁气体。
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公开(公告)号：US07977245B2
公开(公告)日：2011-07-12
申请号：US11388246
申请日：2006-03-22
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814
摘要： Methods for etching a dielectric barrier layer with high selectivity to a dielectric bulk insulating layer are provided. In one embodiment, the method includes providing a substrate having a portion of a dielectric barrier layer exposed through a dielectric bulk insulating layer in a reactor, flowing a gas mixture containing H2 gas, fluorine containing gas, at least an insert gas into the reactor, and etching the exposed portion of the dielectric barrier layer selectively to the dielectric bulk insulating layer.
摘要翻译： 提供了对绝缘体绝缘层具有高选择性的蚀刻电介质阻挡层的方法。 在一个实施例中，该方法包括提供基板，其具有通过反应器中的绝缘体绝缘层暴露的介电阻挡层的一部分，将含有H 2气体的气体混合物，含氟气体，至少插入气体流入反应器， 并且将介电阻挡层的暴露部分选择性地蚀刻到介电体绝缘层。
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5.发明授权公开(公告)号：US07300597B2
公开(公告)日：2007-11-27
申请号：US11535551
申请日：2006-09-27
IPC分类号： B44C1/22
CPC分类号： H01L21/76808 , H01L21/31116
摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.
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6.发明授权Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits 失效有机BARC蚀刻工艺能够用于形成低K双镶嵌集成电路公开(公告)号：US07828987B2
公开(公告)日：2010-11-09
申请号：US11385256
申请日：2006-03-20
IPC分类号： B44C1/22
CPC分类号： H01L21/31144 , H01L21/31138 , H01L21/76808 , H01L21/76829
摘要： In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a hardmask masking the organic planarization layer. This may include introducing into the plasma reactor an etchant gas chemistry including N2, H2, and O2 and etching a masked organic planarization layer using a plasma formed from the etchant gas chemistry. This may include etching through the planarization layer to form a trench with a single etch step.
摘要翻译： 在一些实施方式中，在等离子体反应器中提供了一种用于蚀刻抗蚀剂结构的有机平坦化层中的沟槽的方法，该抗蚀剂结构包括掩蔽有机平坦化层的硬掩模上的光致抗蚀剂掩模结构。 这可以包括将包括N 2，H 2和O 2的蚀刻剂气体化学品引入等离子体反应器，并使用由蚀刻剂气体化学物质形成的等离子体蚀刻掩蔽的有机平面化层。 这可以包括通过平坦化层蚀刻以形成具有单个蚀刻步骤的沟槽。
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公开(公告)号：US20100261352A1
公开(公告)日：2010-10-14
申请号：US12756086
申请日：2010-04-07
申请人： Bing Ji , Kenji Takeshita , Andrew D. Bailey, III , Eric A. Hudson , Maryam Moravej , Stephen M. Sirard , Jungmin Ko , Daniel Le , Robert C. Hefty , Yu Cheng , Gerardo A. Delgadino , Bi-Ming Yen
发明人： Bing Ji , Kenji Takeshita , Andrew D. Bailey, III , Eric A. Hudson , Maryam Moravej , Stephen M. Sirard , Jungmin Ko , Daniel Le , Robert C. Hefty , Yu Cheng , Gerardo A. Delgadino , Bi-Ming Yen
IPC分类号： H01L21/467
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31138
摘要： A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
摘要翻译： 通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。 通过有机掩模将特征蚀刻到低k电介质层中。 在低k电介质层上沉积氟碳层。 氟碳层被固化。 剥去有机面膜。
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8.发明授权Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps 失效等离子体蚀刻和光刻胶剥离工艺，其中间隔室脱氟和晶圆脱氟步骤公开(公告)号：US07244313B1
公开(公告)日：2007-07-17
申请号：US11388363
申请日：2006-03-24
CPC分类号： H01L21/31138 , H01L21/02049
摘要： A plasma etch process includes a plasma etch step performed with a photoresist mask on a workpiece using a polymerizing etch process gas that produces in the plasma polymerizing species which accumulate as a protective polymer layer on the surface of said photoresist mask during the etch step, the process including the following steps performed in the same chamber after the etch step and prior to removing the photoresist mask: (a) removing residue of the type including polymer material from chamber surfaces including a ceiling of said chamber, by coupling RF plasma source power into the chamber while coupling substantially no RF plasma bias power into the chamber, and introducing a hydrogen-containing gas into the chamber, until said residue is removed from the chamber surfaces; (b) removing the protective polymer layer from the surface of the photoresist mask, by coupling RF plasma bias power into the chamber while coupling substantially no RF plasma source power into the chamber, and introducing into the chamber a process gas comprising oxygen and carbon monoxide, until the polymer layer is removed from the surface of the photoresist mask.
摘要翻译： 等离子体蚀刻工艺包括使用聚合蚀刻工艺气体在工件上使用光致抗蚀剂掩模执行的等离子体蚀刻步骤，其在等离子体聚合物质中产生，该等离子体聚合物质在蚀刻步骤期间作为保护性聚合物层积聚在所述光致抗蚀剂掩模的表面上， 该方法包括在蚀刻步骤之后并且在除去光致抗蚀剂掩模之前在相同的室中执行的以下步骤：（a）通过将RF等离子体源功率耦合到其中，从包括所述室的天花板的室表面去除包括聚合物材料的类型的残余物 该室在基本上不将RF等离子体偏压功率耦合到室中，并且将含氢气体引入室中，直到从室表面除去所述残余物; （b）通过将RF等离子体偏压功率耦合到腔室中，同时将基本上没有RF等离子体源功率耦合到腔室中，从而保护聚合物层从光致抗蚀剂掩模的表面上除去，并且将包含氧和一氧化碳的工艺气体 直到聚合物层从光致抗蚀剂掩模的表面去除。
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公开(公告)号：US08394722B2
公开(公告)日：2013-03-12
申请号：US12263662
申请日：2008-11-03
IPC分类号： H01L21/461 , H01L21/306
CPC分类号： H01L21/76802 , H01L21/31138 , H01L21/31144
摘要： A method for controlling critical dimension (CD) of etch features in an etch layer disposed below a functionalized organic mask layer disposed below an intermediate mask layer, disposed below a patterned photoresist mask, which forms a stack is provided. The intermediate mask layer is opened by selectively etching the intermediate mask layer with respect to the patterned photoresist mask. The functionalized organic mask layer is opened. The functionalized organic mask layer opening comprises flowing an open gas comprising COS, forming a plasma, and stopping the flowing of the open gas. The etch layer is etched.
摘要翻译： 提供了一种用于控制设置在布置在形成堆叠的图案化光致抗蚀剂掩模下方的中间掩模层下方的功能化有机掩模层下方的蚀刻层中的蚀刻特征的临界尺寸（CD）的方法。 通过相对于图案化的光致抗蚀剂掩模选择性地蚀刻中间掩模层来打开中间掩模层。 打开功能化的有机掩模层。 功能化的有机掩模层开口包括使形成等离子体的COS的开放气体流动并停止开放气体的流动。 刻蚀蚀刻层。
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10.发明授权公开(公告)号：US08048806B2
公开(公告)日：2011-11-01
申请号：US11372752
申请日：2006-03-10
申请人： Michael C. Kutney , Daniel J. Hoffman , Gerardo A. Delgadino , Ezra R. Gold , Ashok Sinha , Xiaoye Zhao , Douglas H. Burns , Shawming Ma
发明人： Michael C. Kutney , Daniel J. Hoffman , Gerardo A. Delgadino , Ezra R. Gold , Ashok Sinha , Xiaoye Zhao , Douglas H. Burns , Shawming Ma
IPC分类号： H01L21/00 , H01L21/302 , G01L21/30
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译： 在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。 该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。 在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。
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