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1.发明授权Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the method 失效用于沉积特别是晶体层的方法，气体导入元件和用于实施该方法的装置公开(公告)号：US06786973B2
公开(公告)日：2004-09-07
申请号：US10395949
申请日：2003-03-24
申请人： Gerd Strauch , Markus Reinhold
发明人： Gerd Strauch , Markus Reinhold
IPC分类号： C23C1600
CPC分类号： C23C16/45508 , C23C16/45568 , C23C16/45576 , C23C16/4558 , C30B25/14
摘要： The invention relates to a method and to a device for carrying out the method for depositing, in particular, crystalline layers on substrates that are also, in particular, crystalline. According to the invention, at least two process gases are introduced separate from one another into a process chamber of a reactor, whereby the first process gas flows through a central line having a central outlet opening, and the second process gas flows through a line, which is peripheral thereto and which has a peripheral outlet opening. The second process gas flows through one or more supply lines and into a mixing chamber and flows through additional means, which influence the gas stream and which are provided for homogenizing the radial flow profile of the process gas exiting the peripheral outlet opening. The aim of the invention is to obtain a homogeneous radial flow profile by using simple means. To this end, the invention provides that the second process gas flows through a flow influencing element, which is situated downstream from the mixing chamber and which is provided, in particular, in the form of an annular throttle or of turbulence generator, and flows through an annular pre-chamber situated downstream therefrom, after which said second process gas exits through a gas-permeable gas outlet ring.
摘要翻译： 本发明涉及一种方法和装置，用于执行特别是在特别是晶体的衬底上沉积特别是结晶层的方法。 根据本发明，将至少两种工艺气体彼此分离地引入反应器的处理室中，由此第一工艺气体流过具有中心出口开口的中心管，并且第二工艺气体流过管线， 它是周边的并且具有周边的出口开口。 第二工艺气体流过一条或多条供应管线并进入混合室，并且流过另外的装置，这些装置影响气流并且用于均匀化离开外围出口开口的处理气体的径向流动分布。 本发明的目的是通过简单的方法获得均匀的径向流动剖面。 为此，本发明提供了第二工艺气体流过流动影响元件，该流动影响元件位于混合室的下游，特别是以环形节流阀或湍流发生器的形式提供，并流过 位于其下游的环形预制室，之后所述第二工艺气体通过气体可渗透的气体出口环排出。
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2.发明申请Device for depositing thin layers with a wireless detection of process parameters 审中-公开用于通过无线检测过程参数来存储薄层的设备公开(公告)号：US20050092246A1
公开(公告)日：2005-05-05
申请号：US10922660
申请日：2004-08-20
申请人： Peter Baumann , Gerd Strauch , Marcus Schumacher , Walter Franken
发明人： Peter Baumann , Gerd Strauch , Marcus Schumacher , Walter Franken
IPC分类号： C23C16/458 , C23C16/52 , C30B25/16 , C23C16/00
CPC分类号： C30B25/16 , C23C16/4586 , C23C16/52
摘要： The invention relates to a device for depositing thin, especially crystalline layers on at least one substrate, especially a crystalline substrate. Said device comprises a substrate holder which is rotationally arranged in a reactor housing and at least one sensor for measuring a process parameter and a transferring means for transferring the measured values of the process parameter to an evaluation device. The inventive transfer takes place in a wireless manner. The transmitter is arranged inside the reactor housing and a receiver is arranged outside the reactor housing.
摘要翻译： 本发明涉及用于在至少一个衬底，特别是晶体衬底上沉积薄的，特别是晶体层的器件。 所述装置包括旋转地布置在反应器壳体中的衬底保持器和用于测量过程参数的至少一个传感器和用于将过程参数的测量值传送到评估装置的传送装置。 本发明的转移是以无线方式进行的。 发射器布置在反应器壳体内部，并且接收器布置在反应器壳体的外部。
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公开(公告)号：US07201942B2
公开(公告)日：2007-04-10
申请号：US10215858
申请日：2002-08-09
IPC分类号： C23C16/00
CPC分类号： C23C16/45574 , C23C14/0015 , C23C14/12 , C23C14/22 , C23C14/228 , C23C16/006 , C23C16/4481 , C23C16/45565 , C23C16/4557 , C23C16/45572
摘要： A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.
摘要翻译： 公开了一种用于生产涂覆的基材例如OLED的方法，其中至少一层通过冷凝法和固体和/或流体前体沉积在至少一个基底上，特别是至少一个 一个升华源用于至少一部分反应气体。 本发明的特征在于，通过对前体源和基底之间的反应气体的温度控制，避免了反应气体在基底之前的冷凝。
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公开(公告)号：US07056388B2
公开(公告)日：2006-06-06
申请号：US10269157
申请日：2002-10-11
IPC分类号： C23C16/00
CPC分类号： H01J37/321 , H01J37/32577
摘要： A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.
摘要翻译： 公开了一种用于进行基底涂布方法的反应室，在至少一个外壁中具有至少一个开口，其中HF馈通以压力或真空密封方式插入。 反应室的特征还在于以下特征的组合：具有冷却剂通道的支撑板和用于HF线的至少一个开口; 设置在反应室中的区域中的HF线圈，在轴环上的第一密封; 在所述支撑板上的第二密封件和所述套环上的第一密封件之间的绝缘材料的第一盘; 在反应室外的区域中的螺纹，螺纹元件螺纹连接到螺纹上，所有螺纹元件都被构造成防止HF线和支撑板之间的电接触被建立或在HF线和支撑板之间产生电弧 。
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公开(公告)号：US07473316B1
公开(公告)日：2009-01-06
申请号：US09624252
申请日：2000-07-24
IPC分类号： C30B25/16
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406
摘要： What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.
摘要翻译： 这里描述的是以AXBYCZNVMW形式的氮半导体晶体材料的初始生长的方法，其中A，B，C是II或III族的元素，N是氮，M表示V或VI族元素， X，Y，Z，W表示使用沉积在蓝宝石，SiC或Si上的化合物的每种元素的摩尔分数，使用允许在初始生长期间生长参数的连续变化的各种斜坡函数。
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公开(公告)号：US07294207B2
公开(公告)日：2007-11-13
申请号：US10395948
申请日：2003-03-24
IPC分类号： C23C16/455 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/18
CPC分类号： C23C16/45574 , C23C16/45508 , C23C16/45568 , C23C16/45576 , C30B25/14
摘要： The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated susceptor. The first process gas flows through a central line with a central outlet opening and the second process gas flows through a line which is peripheral thereto and which has a peripheral outlet opening that is formed by a gas-permeable gas outlet ring. Said gas outlet ring surrounds a ring-shaped pre-chamber. The invention provides that in order to avoid a parasitic deposition in the area of the peripheral outlet opening, the end section of the gas outlet ring that faces towards the susceptor or the radially outer section of the surface of the gas outlet mechanism surrounding the central outlet opening is cooled by the second process gas according to a truncated cone or revolution hyperboloid shape of a gas guiding surface formed by the pre-chamber back wall.
摘要翻译： 本发明涉及一种尤其将结晶层特别沉积在晶体基底上的方法。 至少两个工艺气体通过加热的基座上方的气体入口机构彼此分开地引入反应器的处理室。 第一工艺气体通过具有中心出口的中心线流动，第二工艺气体流过周边的管线，并且具有由透气气体出口环形成的周边出口。 所述气体出口环围绕环形预制室。 本发明提供的是，为了避免在周边出口的区域中的寄生沉积，气体出口环的端部朝向基座或气体出口机构的表面的径向外部部分围绕中心出口 根据由前室后壁形成的气体导向表面的截头锥形或旋转双曲面形状，通过第二工艺气体冷却开口。
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公开(公告)号：US06849241B2
公开(公告)日：2005-02-01
申请号：US10210247
申请日：2002-08-01
IPC分类号： B01J19/00 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/04
CPC分类号： C23C16/45574 , C23C16/45514 , C23C16/4557 , C23C16/45572 , Y10T117/10 , Y10T117/1016
摘要： The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.
摘要翻译： 本发明涉及一种用于在放置在反应室内部的至少一个衬底上沉积一层或多层的装置和方法。 在将液体或固体原料用于所用的一种反应气体的同时沉积这些层，这些原料通过气体导入单元进料到反应室，在反应室中它们在基材上冷凝或外延生长。 气体进入单元包括多个缓冲体积，其中反应气体彼此分离，并且通过紧密排列的出口开口排出，同时在空间上彼此分离。 反应气体的温度在通过气体导入单元时缓和。
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公开(公告)号：US06309465B1
公开(公告)日：2001-10-30
申请号：US09381208
申请日：1999-11-18
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/455
摘要： A CVD reactor comprising: a reactor casing with a casing cover, a heated susceptor for one wafer or several wafers, which is disposed in the reactor casing, a fluid inlet unit including a plurality of openings facing said wafer or wafers through which the CVD media, which is moderately heated, enter the reactor, and a fluid outlet disposed on the periphery of the reactor casing, through which the introduced media is discharged; wherein the fluid outlet has roughly the shape of a disk with a plurality of outlet openings for the discharge of CVD media, and is disposed between the susceptor and the reactor cover in such a way that the fluid outlet is heated by the susceptor by radiation and hence adjusts itself to a temperature between the temperature of the susceptor and the reactor cover through which the CVD media enter in a moderately heated state.
摘要翻译： 一种CVD反应器，包括：具有壳体盖的反应器壳体，设置在反应器壳体中的一个晶片或多个晶片的加热基座，流体入口单元，其包括面向所述晶片或晶片的多个开口，CVD介质 其被适度加热，进入反应器和设置在反应器壳体的周边上的流体出口，引入的介质通过该出口排出; 其中所述流体出口具有大致具有用于排出CVD介质的多个出口的盘的形状，并且被设置在所述基座和所述反应器盖之间，使得所述流体出口被所述基座通过辐射加热，并且 因此将其自身调节到基座和反应器盖的温度之间的温度，CVD介质通过该温度在适度加热状态下进入。
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