公开(公告)号：US20070145467A1

公开(公告)日：2007-06-28

申请号：US11538239

申请日：2006-10-03

申请人： Geun-sook Park ,  Byung-sun Kim ,  Sang-bae Yi ,  Ho-ik Hwang ,  Myung-hee Kim ,  Hye-young Park

发明人： Geun-sook Park ,  Byung-sun Kim ,  Sang-bae Yi ,  Ho-ik Hwang ,  Myung-hee Kim ,  Hye-young Park

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  H01L29/66825

摘要： An EEPROM includes a semiconductor substrate and a device isolation region defining first, second and third active regions in the semiconductor substrate. The EEPROM also includes at least one first insulation region in at least one first trench in the first active region. A floating gate insulation layer is disposed on the at least one first insulation region and the first, second and third active regions and a floating gate conduction layer is disposed on the floating gate insulation layer. Impurity-containing regions may be disposed in each of the first, second and third active regions at respective sides of the floating gate conduction layer. The floating gate insulation layer may include at least one thinned portion proximate the at least one first insulation region, which may aid Fowler-Nordheim tunneling at this site.

摘要翻译： EEPROM包括半导体衬底和限定半导体衬底中的第一，第二和第三有源区的器件隔离区。 EEPROM还包括在第一有源区域中的至少一个第一沟槽中的至少一个第一绝缘区域。 浮置栅极绝缘层设置在至少一个第一绝缘区域和第一，第二和第三有源区域上，并且浮置栅极导电层设置在浮置栅极绝缘层上。 含杂质的区域可以布置在浮置栅极导电层的相应侧的第一，第二和第三有源区域的每一个中。 浮栅绝缘层可以包括靠近至少一个第一绝缘区域的至少一个变薄部分，这可以有助于在该部位的Fowler-Nordheim隧道。

公开(公告)号：US20070148851A1

公开(公告)日：2007-06-28

申请号：US11608529

申请日：2006-12-08

申请人： Myung-hee Kim ,  Geun-sook Park ,  Sang-bae Yi ,  Ho-ik Hwang ,  Hye-young Park

发明人： Myung-hee Kim ,  Geun-sook Park ,  Sang-bae Yi ,  Ho-ik Hwang ,  Hye-young Park

IPC分类号： H01L21/8238

CPC分类号： G11C16/0416 ,  G11C2216/10 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11558

摘要： A method of programming an EEPROM including a first active region, a second active region and a third active region located separately in a semiconductor substrate, a common floating gate above and intersecting the active regions, first impurity regions located at both sides of the common floating gate in the first active region, second impurity regions located at both sides of the common floating gate in the second active regions and third impurity region, located at both sides of the common floating gate in the third active region. The method includes: applying a programming voltage to the first impurity regions in the first active region and the third impurity regions in the third active region; and applying a ground voltage to the second impurity regions in the second active region.

摘要翻译： 一种编程EEPROM的方法，包括分别位于半导体衬底中的第一有源区，第二有源区和第三有源区，位于有源区之上并与有源区相交的公共浮栅，位于公共浮置的两侧的第一杂质区 位于第一有源区中的栅极，位于第二有源区域中的公共浮置栅极两侧的第二杂质区域和位于第三有源区域中的公共浮置栅极两侧的第三杂质区域。 该方法包括：对第一有源区中的第一杂质区和第三有源区中的第三杂质区施加编程电压; 以及对第二有源区中的第二杂质区施加接地电压。

公开(公告)号：US07705409B2

公开(公告)日：2010-04-27

申请号：US12014244

申请日：2008-01-15

申请人： Oh-kyum Kwon ,  Yong-chan Kim ,  Joon-suk Oh ,  Myung-hee Kim ,  Hye-young Park

发明人： Oh-kyum Kwon ,  Yong-chan Kim ,  Joon-suk Oh ,  Myung-hee Kim ,  Hye-young Park

IPC分类号： H01L29/78

CPC分类号： H01L29/78 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66568

摘要： Some embodiments of the present invention provide high voltage transistors including a semiconductor substrate and a device isolation film defining an active region in the semiconductor substrate. A gate electrode extends along a central portion of the active region while maintaining a predetermined width on the semiconductor substrate. A second well is formed on both sides of the gate electrode in the semiconductor substrate, and partially extends to a bottom surface of the device isolation film. The active region in the semiconductor substrate comprises a first active region disposed under the gate electrode, and separating the device isolation film and a second active region defined by the first active region and the device isolation film. Methods of manufacturing high voltage transistors are also provided.

摘要翻译： 本发明的一些实施例提供了包括半导体衬底和限定半导体衬底中的有源区的器件隔离膜的高压晶体管。 栅电极沿着有源区的中心部分延伸，同时保持半导体衬底上的预定宽度。 第二阱形成在半导体衬底中的栅电极的两侧，并且部分地延伸到器件隔离膜的底表面。 半导体衬底中的有源区域包括设置在栅电极下方的第一有源区，以及分离器件隔离膜和由第一有源区和器件隔离膜限定的第二有源区。 还提供制造高压晶体管的方法。

公开(公告)号：US20080185664A1

公开(公告)日：2008-08-07

申请号：US12014244

申请日：2008-01-15

申请人： Oh-kyum Kwon ,  Yong-chan Kim ,  Joon-suk Oh ,  Myung-hee Kim ,  Hye-young Park

发明人： Oh-kyum Kwon ,  Yong-chan Kim ,  Joon-suk Oh ,  Myung-hee Kim ,  Hye-young Park

IPC分类号： H01L29/78

CPC分类号： H01L29/78 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66568

摘要： Some embodiments of the present invention provide high voltage transistors including a semiconductor substrate and a device isolation film defining an active region in the semiconductor substrate. A gate electrode extends along a central portion of the active region while maintaining a predetermined width on the semiconductor substrate. A second well is formed on both sides of the gate electrode in the semiconductor substrate, and partially extends to a bottom surface of the device isolation film. The active region in the semiconductor substrate comprises a first active region disposed under the gate electrode, and separating the device isolation film and a second active region defined by the first active region and the device isolation film. Methods of manufacturing high voltage transistors are also provided.

摘要翻译： 本发明的一些实施例提供了包括半导体衬底和限定半导体衬底中的有源区的器件隔离膜的高压晶体管。 栅电极沿着有源区的中心部分延伸，同时保持半导体衬底上的预定宽度。 第二阱形成在半导体衬底中的栅电极的两侧，并且部分地延伸到器件隔离膜的底表面。 半导体衬底中的有源区域包括设置在栅电极下方的第一有源区，以及分离器件隔离膜和由第一有源区和器件隔离膜限定的第二有源区。 还提供制造高压晶体管的方法。

公开(公告)号：US08703237B2

公开(公告)日：2014-04-22

申请号：US12465975

申请日：2009-05-14

申请人： Hye-young Park ,  Sung-lae Cho ,  Jin-il Lee ,  Do-hyung Kim ,  Dong-hyun Im

发明人： Hye-young Park ,  Sung-lae Cho ,  Jin-il Lee ,  Do-hyung Kim ,  Dong-hyun Im

IPC分类号： C23C16/00 ,  B05D5/12

CPC分类号： C23C16/305 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45531

摘要： Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.

摘要翻译： 提供了通过化学吸附金属原子到其表面上形成有阴离子的基板来形成材料层的方法，以及通过使用材料层形成方法制造存储器件的方法。 因此，具有小直径的通孔可以填充材料层而不形成空隙或接缝。 因此，可以获得可靠的存储器件。

公开(公告)号：US08852686B2

公开(公告)日：2014-10-07

申请号：US13429546

申请日：2012-03-26

申请人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

发明人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

IPC分类号： C23C16/30 ,  H01L21/71 ,  H01L45/00 ,  H01L27/24 ,  G11C13/00 ,  C23C16/455

CPC分类号： H01L45/06 ,  C23C16/305 ,  C23C16/45534 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.

摘要翻译： 一方面，提供了形成相变材料层的方法。 该方法包括将包含式1的组合物的反应气体供应到反应室中，将包含Ge（II）的第一源供应到反应室中，并将第二源供应到反应室中。 式1是NR1R2R3，其中R1，R2和R3各自独立地选自H，CH3，C2H5，C3H7，C4H9，Si（CH3）3，NH2，NH（CH3），N（CH3） 2，NH（C 2 H 5）和N（C 2 H 5）2。

公开(公告)号：US07600929B2

公开(公告)日：2009-10-13

申请号：US11340596

申请日：2006-01-27

申请人： Hak-je Kim ,  Hye-young Park

发明人： Hak-je Kim ,  Hye-young Park

IPC分类号： G03B17/00

CPC分类号： G03B37/00 ,  G03B17/561

摘要： A method and apparatus for controlling a panning/tilting motor of a monitoring camera is disclosed. The position or speed of the motor is controlled based on the output of a hall sensor built in the motor without any position detection device such as encoder, so that the closed loop control of the panning/tilting motor is accurately performed, and the position coordinate of the panning/tilting motor is not distorted when the motor is out of step.

摘要翻译： 公开了一种用于控制监视摄像机的平移/倾斜电动机的方法和装置。 电动机的位置或速度基于内置于电动机中的霍尔传感器的输出而被控制，而不需要诸如编码器的任何位置检测装置，从而准确地执行平移/倾斜电动机的闭环控制，并且位置坐标 当电机失步时，摇摄/倾斜电机不会变形。

公开(公告)号：US20060187237A1

公开(公告)日：2006-08-24

申请号：US11350888

申请日：2006-02-10

申请人： Hye-young Park

发明人： Hye-young Park

IPC分类号： G09G5/00

CPC分类号： H04N7/18 ,  G08B13/19686

摘要： Provided is a surveillance system for masking a privacy zone and a method of setting up a mask zone. The surveillance system comprises a photographing unit, a zone setting unit, a display unit and an image signal processor. The photographing photographs a surveillance zone. The zone setting unit sets up a mask zone that masks a privacy zone at least partly comprised within the surveillance zone. The display unit displays vertices of the mask zone and the process of connecting the vertices according to the mask zone setting. The image signal processor signal processes image signals corresponding to the surveillance zone and mask image signals corresponding to the mask zone. Accordingly, a user can confirm the process of connecting the points of a mask zone, thereby creating a correct mask zone.

摘要翻译： 提供了用于掩蔽隐私区域的监视系统和设置掩模区域的方法。 监视系统包括拍摄单元，区域设置单元，显示单元和图像信号处理器。 摄影拍摄监控区。 区域设置单元设置掩蔽区域，其掩蔽至少部分地包括在监视区域内的隐私区域。 显示单元根据掩模区域设置显示掩模区域的顶点和连接顶点的过程。 图像信号处理器信号处理对应于监视区域的图像信号并掩蔽对应于掩模区域的图像信号。 因此，用户可以确认连接掩模区域的点的处理，从而创建正确的掩模区域。

公开(公告)号：US20130005112A1

公开(公告)日：2013-01-03

申请号：US13429546

申请日：2012-03-26

申请人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

发明人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

IPC分类号： H01L21/02 ,  C01B21/092

CPC分类号： H01L45/06 ,  C23C16/305 ,  C23C16/45534 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.

公开(公告)号：US08142846B2

公开(公告)日：2012-03-27

申请号：US12248964

申请日：2008-10-10

申请人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

发明人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

IPC分类号： C23C16/30 ,  H01L21/71

CPC分类号： H01L45/06 ,  C23C16/305 ,  C23C16/45534 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.

摘要翻译： 一方面，提供了形成相变材料层的方法。 该方法包括将包含式1的组合物的反应气体供应到反应室中，将包含Ge（II）的第一源供应到反应室中，并将第二源供应到反应室中。 式1是NR1R2R3，其中R1，R2和R3各自独立地选自H，CH3，C2H5，C3H7，C4H9，Si（CH3）3，NH2，NH（CH3），N（CH3） 2，NH（C 2 H 5）和N（C 2 H 5）2。