公开(公告)号：US20100219431A1

公开(公告)日：2010-09-02

申请号：US12725424

申请日：2010-03-16

申请人： Ghulam Hasnain ,  Steven D. Lester ,  Syn-Yem Hu ,  Jeff Ramer

发明人： Ghulam Hasnain ,  Steven D. Lester ,  Syn-Yem Hu ,  Jeff Ramer

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/145 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode.

摘要翻译： 公开了一种光源及其制造方法。 光源包括基板和沉积在基板上的发光结构。 障碍物将发光结构分成彼此电隔离的第一和第二段。 串联连接电极将第一段与第二段串联连接。 当发光结构发光时，发光结构和衬底之间的第一阻挡二极管防止电流在发光结构和衬底之间流动。 屏障通过发光结构延伸到第一阻塞二极管中。

公开(公告)号：US08084775B2

公开(公告)日：2011-12-27

申请号：US12725424

申请日：2010-03-16

申请人： Ghulam Hasnain ,  Steven D. Lester ,  Syn-Yem Hu ,  Jeff Ramer

发明人： Ghulam Hasnain ,  Steven D. Lester ,  Syn-Yem Hu ,  Jeff Ramer

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/145 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode.

摘要翻译： 公开了一种光源及其制造方法。 光源包括基板和沉积在基板上的发光结构。 障碍物将发光结构分成彼此电隔离的第一和第二段。 串联连接电极将第一段与第二段串联连接。 当发光结构发光时，发光结构和衬底之间的第一阻挡二极管防止电流在发光结构和衬底之间流动。 屏障通过发光结构延伸到第一阻塞二极管中。

公开(公告)号：US20120058584A1

公开(公告)日：2012-03-08

申请号：US13294984

申请日：2011-11-11

申请人： Ghulam Hasnain ,  Steven D. Lester ,  Syn-Yem Hu ,  Jeff Ramer

发明人： Ghulam Hasnain ,  Steven D. Lester ,  Syn-Yem Hu ,  Jeff Ramer

IPC分类号： H01L33/62

CPC分类号： H01L27/153 ,  H01L33/145 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode.

摘要翻译： 公开了一种光源及其制造方法。 光源包括基板和沉积在基板上的发光结构。 障碍物将发光结构分成彼此电隔离的第一和第二段。 串联连接电极将第一段与第二段串联连接。 当发光结构发光时，发光结构和衬底之间的第一阻挡二极管防止电流在发光结构和衬底之间流动。 屏障通过发光结构延伸到第一阻塞二极管中。

公开(公告)号：US08525221B2

公开(公告)日：2013-09-03

申请号：US12626474

申请日：2009-11-25

申请人： Steven Lester ,  Jeff Ramer ,  Jun Wu ,  Ling Zhang

发明人： Steven Lester ,  Jeff Ramer ,  Jun Wu ,  Ling Zhang

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0004 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

摘要： A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits lights when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括夹在p型半导体层和n型半导体层之间的有源层。 当p型半导体层的空穴与其中的n型半导体层的电子结合时，有源层发光。 有源层包括多个子层，并且具有多个凹坑，其中多个子层的侧表面与p型半导体材料接触，使得来自p型半导体材料的孔为 通过暴露的侧表面注入到这些子层中，而不通过另一个子层。 可以通过利用n型半导体层中的位错并且使用在用于沉积半导体层的相同室中的蚀刻气氛来蚀刻有源层而不去除部分制造的器件来形成凹坑。

公开(公告)号：US20130026480A1

公开(公告)日：2013-01-31

申请号：US13190420

申请日：2011-07-25

申请人： William E. Fenwick ,  Jeff Ramer

发明人： William E. Fenwick ,  Jeff Ramer

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B25/183 ,  C30B25/10 ,  C30B25/14 ,  C30B25/186 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/0066 ,  H01L33/0075

摘要： A silicon wafer used in manufacturing crystalline GaN for light emitting diodes (LEDs) includes a silicon substrate, a buffer layer of aluminum nitride (AlN) and an upper layer of GaN. The silicon wafer has a diameter of at least 200 millimeters and an Si(111)1×1 surface. The AlN buffer layer overlies the Si(111) surface. The GaN upper layer is disposed above the buffer layer. Across the entire wafer substantially no aluminum atoms of the AlN are present in a bottom most plane of atoms of the AlN, and across the entire wafer substantially only nitrogen atoms of the AlN are present in the bottom most plane of atoms of the AlN. A method of making the AlN buffer layer includes preflowing a first amount of ammonia equaling less than 0.01% by volume of hydrogen flowing through a chamber before flowing trimethylaluminum and then a subsequent amount of ammonia through the chamber.

摘要翻译： 用于制造用于发光二极管（LED）的结晶GaN的硅晶片包括硅衬底，氮化铝缓冲层（AlN）和GaN上层。 硅晶片的直径至少为200毫米，Si（111）1×1表面。 AlN缓冲层覆盖Si（111）表面。 GaN上层设置在缓冲层的上方。 在整个晶片上，AlN的原子基本上没有铝原子存在于AlN原子的最底层平面中，并且在整个晶片上基本上只有AlN的氮原子存在于AlN原子的最底层。 制备AlN缓冲层的方法包括在流动三甲基铝之前预先流过等于小于0.01体积％的流过室的氢气的第一量的氨，然后再循环通过该室。

公开(公告)号：US20110121357A1

公开(公告)日：2011-05-26

申请号：US12626474

申请日：2009-11-25

申请人： Steven Lester ,  Jeff Ramer ,  Jun Wu ,  Ling Zhang

发明人： Steven Lester ,  Jeff Ramer ,  Jun Wu ,  Ling Zhang

IPC分类号： H01L33/30 ,  H01L21/20 ,  H01L21/302

CPC分类号： H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0004 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

摘要： A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括夹在p型半导体层和n型半导体层之间的有源层。 当来自p型半导体层的孔与其中的n型半导体层的电子结合时，有源层发光。 有源层包括多个子层，并且具有多个凹坑，其中多个子层的侧表面与p型半导体材料接触，使得来自p型半导体材料的孔为 通过暴露的侧表面注入到这些子层中，而不通过另一个子层。 可以通过利用n型半导体层中的位错并且使用在用于沉积半导体层的相同室中的蚀刻气氛来蚀刻有源层而不去除部分制造的器件来形成凹坑。

公开(公告)号：US08853668B2

公开(公告)日：2014-10-07

申请号：US13249146

申请日：2011-09-29

申请人： Jeff Ramer ,  Steve Ting

发明人： Jeff Ramer ,  Steve Ting

IPC分类号： H01L33/32 ,  H01L33/40

CPC分类号： H01L33/007 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

摘要： A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/μm2 and 30 V-pits/μm2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.

摘要翻译： 发光器件包括具有n型III-V族半导体的第一层，与第一层相邻的第二层，第二层包括在电子和空穴复合时产生光的活性材料。 在一些情况下，活性材料具有一个或多个密度在约1V-pit /μm2和30V-pits /μm2之间的V型凹坑。 发光器件包括与第二层相邻的第三层，第三层包括p型III-V族半导体。

公开(公告)号：US20130082236A1

公开(公告)日：2013-04-04

申请号：US13249146

申请日：2011-09-29

申请人： Jeff Ramer ,  Steve Ting

发明人： Jeff Ramer ,  Steve Ting

IPC分类号： H01L33/32 ,  H01L33/40 ,  B82Y99/00

CPC分类号： H01L33/007 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

摘要： A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/μm2 and 30 V-pits/μm2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.