Backlight unit equipped with light emitting diodes
    4.
    发明授权
    Backlight unit equipped with light emitting diodes 有权
    背光单元配有发光二极管

    公开(公告)号:US08053804B2

    公开(公告)日:2011-11-08

    申请号:US12693994

    申请日:2010-01-26

    IPC分类号: H01L33/64

    摘要: Disclosed herein is a backlight unit equipped with LEDs. The backlight includes an insulating substrate, a plurality of LED packages, an upper heat dissipation plate, and a lower heat dissipation plate. The insulating substrate is provided with predetermined circuit patterns. The LED packages are mounted above the insulating substrate, and are electrically connected to the circuit patterns. The upper heat dissipation plate is formed on the insulating substrate, and is configured to come into contact with the circuit patterns and to dissipate heat. The lower heat dissipation plate is formed on the insulating substrate, and is configured to transmit heat transmitted through the upper heat dissipation plate. The upper heat dissipation plate and the lower heat dissipation plate are connected to each other by at least one through hole, and the through hole and the upper heat dissipation plate have a predetermined area ratio.

    摘要翻译: 这里公开了配备有LED的背光单元。 背光源包括绝缘基板,多个LED封装,上部散热板和下部散热板。 绝缘基板设置有预定的电路图案。 LED封装安装在绝缘基板上方,并且电连接到电路图案。 上部散热板形成在绝缘基板上,并被配置为与电路图案接触并散热。 下部散热板形成在绝缘基板上,构成为透过上部散热板透过的热量。 上散热板和下散热板通过至少一个通孔彼此连接,并且通孔和上散热板具有预定的面积比。

    Backlight unit equipped with light emitting diodes
    5.
    发明申请
    Backlight unit equipped with light emitting diodes 有权
    背光单元配有发光二极管

    公开(公告)号:US20070221941A1

    公开(公告)日:2007-09-27

    申请号:US11714193

    申请日:2007-03-06

    IPC分类号: H01L33/00

    摘要: Disclosed herein is a backlight unit equipped with LEDs. The backlight includes an insulating substrate, a plurality of LED packages, an upper heat dissipation plate, and a lower heat dissipation plate. The insulating substrate is provided with predetermined circuit patterns. The LED packages are mounted above the insulating substrate, and are electrically connected to the circuit patterns. The upper heat dissipation plate is formed on the insulating substrate, and is configured to come into contact with the circuit patterns and to dissipate heat. The lower heat dissipation plate is formed on the insulating substrate, and is configured to transmit heat transmitted through the upper heat dissipation plate. The upper heat dissipation plate and the lower heat dissipation plate are connected to each other by at least one through hole, and the through hole and the upper heat dissipation plate have a predetermined area ratio.

    摘要翻译: 这里公开了配备有LED的背光单元。 背光源包括绝缘基板,多个LED封装,上部散热板和下部散热板。 绝缘基板设置有预定的电路图案。 LED封装安装在绝缘基板上方,并且电连接到电路图案。 上部散热板形成在绝缘基板上,并被配置为与电路图案接触并散热。 下部散热板形成在绝缘基板上,构成为透过上部散热板透过的热量。 上散热板和下散热板通过至少一个通孔彼此连接,并且通孔和上散热板具有预定的面积比。

    Backlight unit equipped with light emitting diodes
    6.
    发明授权
    Backlight unit equipped with light emitting diodes 有权
    背光单元配有发光二极管

    公开(公告)号:US07795635B2

    公开(公告)日:2010-09-14

    申请号:US11714193

    申请日:2007-03-06

    IPC分类号: H01L33/64

    摘要: Disclosed herein is a backlight unit equipped with LEDs. The backlight includes an insulating substrate, a plurality of LED packages, an upper heat dissipation plate, and a lower heat dissipation plate. The insulating substrate is provided with predetermined circuit patterns. The LED packages are mounted above the insulating substrate, and are electrically connected to the circuit patterns. The upper heat dissipation plate is formed on the insulating substrate, and is configured to come into contact with the circuit patterns and to dissipate heat. The lower heat dissipation plate is formed on the insulating substrate, and is configured to transmit heat transmitted through the upper heat dissipation plate. The upper heat dissipation plate and the lower heat dissipation plate are connected to each other by at least one through hole, and the through hole and the upper heat dissipation plate have a predetermined area ratio.

    摘要翻译: 这里公开了配备有LED的背光单元。 背光源包括绝缘基板,多个LED封装,上部散热板和下部散热板。 绝缘基板设置有预定的电路图案。 LED封装安装在绝缘基板上方,并且电连接到电路图案。 上部散热板形成在绝缘基板上,并被配置为与电路图案接触并散热。 下部散热板形成在绝缘基板上,构成为透过上部散热板透过的热量。 上散热板和下散热板通过至少一个通孔彼此连接,并且通孔和上散热板具有预定的面积比。

    BACKLIGHT UNIT EQUIPPED WITH LIGHT EMITTING DIODES
    7.
    发明申请
    BACKLIGHT UNIT EQUIPPED WITH LIGHT EMITTING DIODES 有权
    背光单元配有发光二极管

    公开(公告)号:US20100127281A1

    公开(公告)日:2010-05-27

    申请号:US12693994

    申请日:2010-01-26

    IPC分类号: H01L33/00

    摘要: Disclosed herein is a backlight unit equipped with LEDs. The backlight includes an insulating substrate, a plurality of LED packages, an upper heat dissipation plate, and a lower heat dissipation plate. The insulating substrate is provided with predetermined circuit patterns. The LED packages are mounted above the insulating substrate, and are electrically connected to the circuit patterns. The upper heat dissipation plate is formed on the insulating substrate, and is configured to come into contact with the circuit patterns and to dissipate heat. The lower heat dissipation plate is formed on the insulating substrate, and is configured to transmit heat transmitted through the upper heat dissipation plate. The upper heat dissipation plate and the lower heat dissipation plate are connected to each other by at least one through hole, and the through hole and the upper heat dissipation plate have a predetermined area ratio.

    摘要翻译: 这里公开了配备有LED的背光单元。 背光源包括绝缘基板,多个LED封装,上部散热板和下部散热板。 绝缘基板设置有预定的电路图案。 LED封装安装在绝缘基板上方,并且电连接到电路图案。 上部散热板形成在绝缘基板上,并被配置为与电路图案接触并散热。 下部散热板形成在绝缘基板上,构成为透过上部散热板透过的热量。 上散热板和下散热板通过至少一个通孔彼此连接,并且通孔和上散热板具有预定的面积比。

    Semiconductor device and method for forming the same
    8.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号:US08373234B2

    公开(公告)日:2013-02-12

    申请号:US12649637

    申请日:2009-12-30

    IPC分类号: H01L21/70

    摘要: A semiconductor device includes a structure in which a difference in height between a cell region and a peripheral region are formed so that a buried gate structure of the cell region is substantially equal in height to the gate of the peripheral region, whereby a bit line and a storage node contact can be more easily formed in the cell region and parasitic capacitance can be decreased. The semiconductor device includes a cell region including a gate buried in a substrate, and a peripheral region adjacent to the cell region, where a step height between a surface of the cell and a surface of the peripheral region is generated.

    摘要翻译: 半导体器件包括其中形成单元区域和外围区域之间的高度差的结构,使得单元区域的掩埋栅极结构的高度与周边区域的栅极高度相等,由此位线 可以更容易地在单元区域中形成存储节点接触,并且可以减小寄生电容。 半导体器件包括包含埋在衬底中的栅极的单元区域和与单元区域相邻的周边区域,其中生成单元表面和外围区域表面之间的台阶高度。