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1.发明申请Methods of treating semiconducting materials and treated semiconducting materials 失效处理半导体材料和处理的半导体材料的方法公开(公告)号：US20090297395A1
公开(公告)日：2009-12-03
申请号：US12156499
申请日：2008-06-02
申请人： Prantik Mazumder , Kamal Kishore Soni , Christopher Scott Thomas , Natesan Venkataraman , Glen Bennett Cook
发明人： Prantik Mazumder , Kamal Kishore Soni , Christopher Scott Thomas , Natesan Venkataraman , Glen Bennett Cook
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02546
摘要： A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed.
摘要翻译： 公开了一种处理半导体材料的方法。 在所公开的方法中，提供具有晶体结构的半导体材料，至少部分半导体材料暴露于热源以产生熔池，然后将半导体材料冷却。 还公开了通过该方法处理的半导体材料。
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2.发明申请METHODS OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL ON A MOLD COMPRISING SEMICONDUCTING MATERIAL 失效在包含半导体材料的模具上制造半导体材料的方法公开(公告)号：US20100290946A1
公开(公告)日：2010-11-18
申请号：US12466143
申请日：2009-05-14
IPC分类号： C22C28/00 , B22D23/00 , B22D23/04 , B22D29/00 , B22C1/00 , C22C13/00 , B29C39/02 , C01B33/02 , B29C33/56
CPC分类号： C30B29/06 , B22D23/04 , C23C4/185 , C30B15/007 , C30B19/062 , C30B19/12 , C30B29/08 , C30B29/40
摘要： The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
摘要翻译： 本发明涉及在包含半导体材料和由此形成的半导体材料制品的模具上制造半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。
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3.发明授权公开(公告)号：US08445364B2
公开(公告)日：2013-05-21
申请号：US12156499
申请日：2008-06-02
申请人： Prantik Mazumder , Kamal Kishore Soni , Christopher Scott Thomas , Natesan Venkataraman , Glen Bennett Cook
发明人： Prantik Mazumder , Kamal Kishore Soni , Christopher Scott Thomas , Natesan Venkataraman , Glen Bennett Cook
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02546
摘要： A method for treating semiconducting materials includes providing a semiconducting material having a crystalline structure, pre-heating a portion of the semiconducting material to a temperature less than the melting temperature of the semiconducting material, and then cooling the semiconducting material prior to exposing at least the portion of the semiconducting material to a heat source to create a melt pool, and cooling the semiconducting material.
摘要翻译： 一种用于处理半导体材料的方法包括提供具有晶体结构的半导体材料，将半导体材料的一部分预加热到低于半导体材料的熔融温度的温度，然后在至少暴露出半导体材料之前冷却半导体材料 半导体材料的一部分到热源以产生熔池，并冷却半导体材料。
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4.发明申请METHODS OF MAKING AN UNSUPPORTED ARTICLE OF PURE OR DOPED SEMICONDUCTING MATERIAL 有权制备纯或半导体材料的不合格品的方法公开(公告)号：US20110033643A1
公开(公告)日：2011-02-10
申请号：US12523274
申请日：2009-02-27
申请人： Glen Bennett Cook , Prantik Mazumder , Kamal Kishore Soni , Balram Suman , Christopher Scott Thomas , Natesan Venkataraman
发明人： Glen Bennett Cook , Prantik Mazumder , Kamal Kishore Soni , Balram Suman , Christopher Scott Thomas , Natesan Venkataraman
CPC分类号： C30B29/06 , C30B15/007 , C30B28/04
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
摘要翻译： 本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。
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5.发明授权Methods of making an unsupported article of pure or doped semiconducting material 有权制造纯或掺杂半导体材料的无载体制品的方法公开(公告)号：US08617447B2
公开(公告)日：2013-12-31
申请号：US12523274
申请日：2009-02-27
申请人： Glen Bennett Cook , Prantik Mazumder , Kamal Kishore Soni , Balram Suman , Christopher Scott Thomas , Natesan Venkataraman
发明人： Glen Bennett Cook , Prantik Mazumder , Kamal Kishore Soni , Balram Suman , Christopher Scott Thomas , Natesan Venkataraman
IPC分类号： C30B28/04
CPC分类号： C30B29/06 , C30B15/007 , C30B28/04
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
摘要翻译： 本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。
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6.发明授权Methods of making an article of semiconducting material on a mold comprising semiconducting material 失效在包含半导体材料的模具上制造半导体材料制品的方法公开(公告)号：US08398768B2
公开(公告)日：2013-03-19
申请号：US12466143
申请日：2009-05-14
CPC分类号： C30B29/06 , B22D23/04 , C23C4/185 , C30B15/007 , C30B19/062 , C30B19/12 , C30B29/08 , C30B29/40
摘要： The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
摘要翻译： 本发明涉及在包含半导体材料和由此形成的半导体材料制品的模具上制造半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。
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公开(公告)号：US08796687B2
公开(公告)日：2014-08-05
申请号：US13236068
申请日：2011-09-19
申请人： Glen Bennett Cook , Prantik Mazumder , Mallanagouda Dyamanagouda Patil , Lili Tian , Natesan Venkataraman
发明人： Glen Bennett Cook , Prantik Mazumder , Mallanagouda Dyamanagouda Patil , Lili Tian , Natesan Venkataraman
CPC分类号： C30B11/002 , C30B13/24 , C30B28/06 , C30B29/06
摘要： A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material.
摘要翻译： 一种处理半导体材料片的方法包括在半导体材料片的每个主表面上形成可烧结的第一层，在每个第一层上形成第二层以形成颗粒涂覆的半导体片，将颗粒涂覆 将所述颗粒包覆的片材加热到有效地至少部分地烧结所述第一层并且至少部分地熔化所述半导体材料的温度，以及冷却所述颗粒涂覆的片材以固化所述半导体材料并形成经处理的片材 半导体材料。
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公开(公告)号：US08242033B2
公开(公告)日：2012-08-14
申请号：US12632837
申请日：2009-12-08
IPC分类号： H01L21/00
CPC分类号： C30B29/64 , C30B11/003 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/16 , C30B29/42 , C30B29/52 , H01L21/02532 , H01L21/02667 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
摘要： Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.
摘要翻译： 公开了制备和/或处理半导体材料制品的方法。 在各种方法中，提供了半导体材料的第一制品，第一半导体材料被充分加热以熔化半导体材料，并且熔化的半导体材料在基本平行于熔融半导体制品的最短尺寸的方向上固化 材料。 还公开了通过本文所述方法制备的半导体材料制品。
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9.发明申请COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL 审中-公开复合材料的主要成分及制备方法公开(公告)号：US20120299218A1
公开(公告)日：2012-11-29
申请号：US13117440
申请日：2011-05-27
CPC分类号： C30B15/007 , C30B15/36 , C30B29/06
摘要： The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon.
摘要翻译： 本公开涉及一种基材模具，其包括壳体材料，该外壳材料具有被配置为与熔融半导体材料接合的外表面，以及被配置为热转印表面以传递热量的内表面，以及限定在外壳材料内的构造物， 外壳材料通过外壳材料的热传递表面的热量。 衬底模具被配置为浸入熔融半导体材料中，并且外壳材料的外表面被配置为具有在其上形成的凝固的熔融半导体材料。
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公开(公告)号：US07225665B2
公开(公告)日：2007-06-05
申请号：US11192381
申请日：2005-07-27
申请人： Douglas Edmon Goforth , Josef Chauncey Lapp , Michael Thomas Murtagh , Brian Paul Strines , Natesan Venkataraman , Glen Bennett Cook
发明人： Douglas Edmon Goforth , Josef Chauncey Lapp , Michael Thomas Murtagh , Brian Paul Strines , Natesan Venkataraman , Glen Bennett Cook
IPC分类号： G01B5/28
摘要： A method of measuring the shape of a glass sheet is provided. The method includes positioning the glass sheet in contact with a fluid and measuring the distance between a sensor and a surface of the glass sheet at a plurality of locations on the surface thereof. The method may further include deconvolving the shape of the glass sheet into at least one simple shape element, such as cylindrical or spherical, and may further include varying the temperature profile of an array of heaters in a glass manufacturing process based on the at least one shape element.
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