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公开(公告)号：US07063597B2
公开(公告)日：2006-06-20
申请号：US10693683
申请日：2003-10-24
申请人： Gopalakrishna B. Prabhu , Thomas H. Osterheld , Garlen C. Leung , Adam H. Zhong , Peter McReynolds , Yi-Yung Tao , Gregory E. Menk , Vasanth N. Mohan , Christopher Heung-Gyun Lee
发明人： Gopalakrishna B. Prabhu , Thomas H. Osterheld , Garlen C. Leung , Adam H. Zhong , Peter McReynolds , Yi-Yung Tao , Gregory E. Menk , Vasanth N. Mohan , Christopher Heung-Gyun Lee
IPC分类号： B24B1/00
CPC分类号： H01L21/76229 , H01L21/31053
摘要： Methods and compositions are provided for planarizing a substrate surface with reduced or minimal topographical defect formation during a polishing process for dielectric materials. In one aspect a method is provided for polishing a substrate containing two or more dielectric layers, such as silicon oxide, silicon nitride, silicon oxynitride, with at least one processing step using a fixed-abrasive polishing article as a polishing article. The processing steps may be used to remove all, substantially all, or a portion of the one or more dielectric layers, which may include removal of the topography, the bulk dielectric, or residual dielectric material of a dielectric layer in two or more steps.
摘要翻译： 提供的方法和组合物用于在电介质材料的抛光工艺期间使衬底表面平坦化，减少或最小的形貌缺陷形成。 在一个方面，提供一种用于使用固定磨料抛光制品作为抛光制品的至少一个加工步骤来研磨含有两个或更多个介电层的衬底的方法，例如氧化硅，氮化硅，氮氧化硅。 处理步骤可以用于去除一个或多个介电层的全部，基本上全部或一部分，其可以包括以两个或更多个步骤去除介电层的形貌，体电介质或残余电介质材料。
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公开(公告)号：US20120021671A1
公开(公告)日：2012-01-26
申请号：US12843793
申请日：2010-07-26
申请人： Peter McReynolds , Eric S. Rondum , Garlen C. Leung , Adam H. Zhong , Gregory E. Menk , Gopalakrishna B. Prabhu , Thomas H. Osterheld
发明人： Peter McReynolds , Eric S. Rondum , Garlen C. Leung , Adam H. Zhong , Gregory E. Menk , Gopalakrishna B. Prabhu , Thomas H. Osterheld
IPC分类号： B24B49/12
CPC分类号： B24B37/005 , B24B37/042 , B24B37/32
摘要： A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, a method for monitoring at least one surface of a retaining ring coupled to a carrier head is provided. The method includes moving the carrier head adjacent a sensor device disposed in a polishing module, transmitting energy from the sensor device toward the retaining ring, receiving energy reflected from the retaining ring, and determining a condition of the retaining ring based on the received energy.
摘要翻译： 描述了一种用于监测设置在抛光模块中的载体头上的保持环的表面状况的方法和装置。 在一个实施例中，提供一种用于监测联接到承载头的保持环的至少一个表面的方法。 该方法包括使载体头靠近设置在抛光模块中的传感器装置移动，将能量从传感器装置传递到保持环，接收从保持环反射的能量，以及基于所接收的能量来确定保持环的状态。
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公开(公告)号：US20130189841A1
公开(公告)日：2013-07-25
申请号：US13354939
申请日：2012-01-20
申请人： Mihaela Balseanu , Li-Qun Xia , Derek R. Witty , Thomas H. Osterheld , Christopher Heung-Gyun Lee , William H. McClintock
发明人： Mihaela Balseanu , Li-Qun Xia , Derek R. Witty , Thomas H. Osterheld , Christopher Heung-Gyun Lee , William H. McClintock
IPC分类号： H01L21/306
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02274 , H01L21/31053 , H01L21/823807 , H01L29/66545 , H01L29/7843
摘要： A method for forming an integrated circuit is provided. In one embodiment, the method includes forming a stop layer comprising carbon doped silicon nitride on a gate region on a substrate, the gate region having a poly gate and one or more spacers formed adjacent the poly gate, forming a dielectric layer on the stop layer, and removing a portion of the dielectric layer above the gate region using a CMP process, wherein the stop layer is a strain inducing layer having a CMP removal rate that is less than the CMP removal rate of the dielectric layer and equal to or less than the CMP removal rate of the one or more spacers.
摘要翻译： 提供一种用于形成集成电路的方法。 在一个实施例中，该方法包括在衬底上的栅极区域上形成包含碳掺杂氮化硅的阻挡层，栅极区域具有多晶硅栅极和与多晶硅栅极相邻形成的一个或多个间隔区，在阻挡层上形成电介质层 并且使用CMP工艺去除所述栅极区域上方的所述电介质层的一部分，其中所述阻挡层是具有小于所述介电层的CMP去除速率的CMP去除速率的应变诱导层，并且等于或小于 一个或多个间隔物的CMP去除速率。
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公开(公告)号：US06220941B1
公开(公告)日：2001-04-24
申请号：US09164860
申请日：1998-10-01
申请人： Boris Fishkin , Charles C. Garretson , Peter McKeever , Thomas H. Osterheld , Gopalakrishna B. Prabhu , Doyle E. Bennett , Benjamin A. Bonner , Sidney Huey
发明人： Boris Fishkin , Charles C. Garretson , Peter McKeever , Thomas H. Osterheld , Gopalakrishna B. Prabhu , Doyle E. Bennett , Benjamin A. Bonner , Sidney Huey
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/04 , B24B57/02
摘要： The present invention provides a method and apparatus for delivering one or more rinse agents to a surface, such as a polishing pad surface and preferably one or more polishing fluids. The invention also provides a method of cleaning one or more surfaces, such as a polishing pad surface and a substrate surface, by delivering a spray of one or more rinse agents to the surface and, preferably, causing the rinse agent to flow across the surface from a central region to an outer region where unwanted debris and material is collected.
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公开(公告)号：US20140113524A1
公开(公告)日：2014-04-24
申请号：US13658737
申请日：2012-10-23
申请人： Jun Qian , Sivakumar Dhandapani , Benjamin Cherian , Thomas H. Osterheld , Jeffrey Drue David , Gregory E. Menk , Boguslaw A. Swedek , Doyle E. Bennett
发明人： Jun Qian , Sivakumar Dhandapani , Benjamin Cherian , Thomas H. Osterheld , Jeffrey Drue David , Gregory E. Menk , Boguslaw A. Swedek , Doyle E. Bennett
IPC分类号： B24B37/013 , B24B49/12
CPC分类号： B24B37/013 , B24B49/12
摘要： A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ spectrographic monitoring system to generate a sequence of measured spectra, selecting less than all of the measured spectra to generate a sequence of selected spectra, generating a sequence of values from the sequence of selected spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of values.
摘要翻译： 控制抛光的方法包括抛光衬底，用原位光谱监测系统在抛光期间监测衬底以产生测量光谱序列，选择少于所有测量光谱以产生选定光谱序列，产生序列 根据所选光谱的序列的值，并且基于所述值序列来确定抛光终点或抛光速率的调整中的至少一个。
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公开(公告)号：US09221147B2
公开(公告)日：2015-12-29
申请号：US13658737
申请日：2012-10-23
申请人： Jun Qian , Sivakumar Dhandapani , Benjamin Cherian , Thomas H. Osterheld , Jeffrey Drue David , Gregory E. Menk , Boguslaw A. Swedek , Doyle E. Bennett
发明人： Jun Qian , Sivakumar Dhandapani , Benjamin Cherian , Thomas H. Osterheld , Jeffrey Drue David , Gregory E. Menk , Boguslaw A. Swedek , Doyle E. Bennett
IPC分类号： G06F19/00 , B24B37/013 , B24B49/12
CPC分类号： B24B37/013 , B24B49/12
摘要： A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ spectrographic monitoring system to generate a sequence of measured spectra, selecting less than all of the measured spectra to generate a sequence of selected spectra, generating a sequence of values from the sequence of selected spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of values.
摘要翻译： 控制抛光的方法包括抛光衬底，用原位光谱监测系统在抛光期间监测衬底以产生测量光谱序列，选择少于所有测量光谱以产生选定光谱序列，产生序列 根据所选光谱的序列的值，并且基于所述值序列来确定抛光终点或抛光速率的调整中的至少一个。
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公开(公告)号：US09005999B2
公开(公告)日：2015-04-14
申请号：US13539344
申请日：2012-06-30
申请人： Kun Xu , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
发明人： Kun Xu , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
IPC分类号： H01L21/00 , H01L21/302 , H01L21/304
CPC分类号： H01L21/302 , B24B37/015 , H01L21/304
摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要翻译： 提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。 一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除导电材料的一部分，在抛光过程中反复监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程 响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。
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公开(公告)号：US08470125B2
公开(公告)日：2013-06-25
申请号：US13246614
申请日：2011-09-27
摘要： A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.
摘要翻译： 用于化学机械抛光装置的承载头包括具有柔性下部和刚性上部的保持环。
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公开(公告)号：US20100081360A1
公开(公告)日：2010-04-01
申请号：US12240615
申请日：2008-09-29
申请人： Kun Xu , Thomas H. Osterheld , Jimin Zhang , Stephen Jew
发明人： Kun Xu , Thomas H. Osterheld , Jimin Zhang , Stephen Jew
CPC分类号： B24B37/042 , B24B37/015 , B24B49/16
摘要： A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range.
摘要翻译： 提供了一种用于化学机械抛光工艺的温度控制方法和装置。 在一个实施例中，该方法包括用抛光垫组件的表面抛光衬底，测量抛光垫组件的表面的实时温度，确定抛光垫组件的表面的实时温度是否为 在预定的处理温度范围内，并且将抛光垫组件的表面与衬垫调节器接触，以调节抛光垫组件的表面的温度落在预定温度范围内。
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公开(公告)号：US20090221223A1
公开(公告)日：2009-09-03
申请号：US12427642
申请日：2009-04-21
IPC分类号： B24B41/06
摘要： A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.
摘要翻译： 用于化学机械抛光装置的承载头包括具有柔性下部和刚性上部的保持环。
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