公开(公告)号：US5539762A

公开(公告)日：1996-07-23

申请号：US440150

申请日：1995-05-12

申请人： Gregory Belenky ,  Rudolf F. Kzarinov ,  Keisuke Kojima ,  Claude L. Reynolds, Jr.

发明人： Gregory Belenky ,  Rudolf F. Kzarinov ,  Keisuke Kojima ,  Claude L. Reynolds, Jr.

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2009 ,  H01S5/2231 ,  H01S5/3211

摘要： A novel InP-based semiconductor laser comprises an unpatterned active region that is essentially co-extensive with the substrate of the laser, an electron stopper layer, and a separate confinement heterostructure (SCH) layer that has a portion of thickness greater than the thickness of the remainder of the SCH layer. The difference in thickness serves to provide lateral guiding of the laser mode. A patterned current blocking layer is disposed on the SCH layer, with a window in the blocking layer defining the region of increased thickness of the SCH layer. The inventive laser is readily manufacturable and can have improved properties.

摘要翻译： 一种新颖的基于InP的半导体激光器包括与激光器的基板，电子阻挡层和单独的约束异质结构（SCH）层基本上共同扩展的未图案化的有源区，其具有大于 SCH层的剩余部分。 厚度差用于提供激光模式的横向引导。 图案化电流阻挡层设置在SCH层上，阻挡层中的窗口限定了SCH层厚度增加的区域。 本发明的激光器易于制造并且可以具有改进的性能。

公开(公告)号：US09065000B2

公开(公告)日：2015-06-23

申请号：US13038585

申请日：2011-03-02

申请人： Gregory Belenky ,  Leon Shterengas ,  Arthur David Westerfeld

发明人： Gregory Belenky ,  Leon Shterengas ,  Arthur David Westerfeld

IPC分类号： H01L31/0336 ,  H01L31/0687

CPC分类号： H01L31/06875 ,  H01L31/03046 ,  H01L31/101 ,  Y02E10/544

摘要： A method of fabrication of barrier diode based infrared detectors, utilizing the growth of unstrained, not relaxed III-V compound semiconductor material layers having a lattice constant over 6 Angstrom, is provided. The growth is performed by the means of Molecular Beam Epitaxy (MBE) or Metal-Organic Vapor Phase Epitaxy (MOVPE). The method comprises the use of bulk crystalline substrates and the growth of a transitional layer of GaInAsSb with graded composition, followed by an optional thick layer of GaInAsSb of constant composition, lattice matched to the said III-V compound semiconductor material layers, the said optional layer of GaInAsSb of constant composition serving as a virtual substrate. The method provides high crystalline quality layers suitable for semiconductor device fabrication that can effectively interact with electromagnetic radiation of the mid-infrared spectral range with a wavelength between about 2 micrometers to about 16 micrometers.

摘要翻译： 提供了一种制造基于阻挡二极管的红外检测器的方法，其利用具有超过6埃的晶格常数的未应变的，不弛豫的III-V化合物半导体材料层的生长。 生长通过分子束外延（MBE）或金属 - 有机气相外延（MOVPE）的方式进行。 该方法包括使用块状结晶衬底以及渐变组成的GaInAsSb过渡层的生长，随后是任意的具有恒定组成的GaInAsSb厚层，与所述III-V化合物半导体材料层晶格匹配，所述可选择的 具有恒定组成的GaInAsSb层作为虚拟底物。 该方法提供适用于半导体器件制造的高结晶质量层，其可以有效地与波长在约2微米至约16微米之间的中红外光谱范围的电磁辐射相互作用。

公开(公告)号：US20120223362A1

公开(公告)日：2012-09-06

申请号：US13038585

申请日：2011-03-02

申请人： Gregory Belenky ,  Leon Shterengas ,  Arthur David Westerfeld

发明人： Gregory Belenky ,  Leon Shterengas ,  Arthur David Westerfeld

IPC分类号： H01L31/0304

CPC分类号： H01L31/06875 ,  H01L31/03046 ,  H01L31/101 ,  Y02E10/544

摘要： A method of fabrication of barrier diode based infrared detectors, utilizing the growth of unstrained, not relaxed III-V compound semiconductor material layers having a lattice constant over 6 Angstrom, is provided. The growth is performed by the means of Molecular Beam Epitaxy (MBE) or Metal-Organic Vapor Phase Epitaxy (MOVPE). The method comprises the use of bulk crystalline substrates and the growth of a transitional layer of GaInAsSb with graded composition, followed by an optional thick layer of GaInAsSb of constant composition, lattice matched to the said III-V compound semiconductor material layers, the said optional layer of GaInAsSb of constant composition serving as a virtual substrate. The method provides high crystalline quality layers suitable for semiconductor device fabrication that can effectively interact with electromagnetic radiation of the mid-infrared spectral range with a wavelength between about 2 micrometers to about 16 micrometers.

摘要翻译： 提供了一种制造基于阻挡二极管的红外检测器的方法，其利用具有超过6埃的晶格常数的未应变的，不弛豫的III-V化合物半导体材料层的生长。 生长通过分子束外延（MBE）或金属 - 有机气相外延（MOVPE）的方式进行。 该方法包括使用块状结晶衬底以及渐变组成的GaInAsSb过渡层的生长，随后是任意的具有恒定组成的GaInAsSb厚层，与所述III-V化合物半导体材料层晶格匹配，所述可选择的 具有恒定组成的GaInAsSb层作为虚拟底物。 该方法提供适用于半导体器件制造的高结晶质量层，其可以有效地与波长在约2微米至约16微米之间的中红外光谱范围的电磁辐射相互作用。

公开(公告)号：US20050041711A1

公开(公告)日：2005-02-24

申请号：US10956590

申请日：2004-09-29

申请人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

发明人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

IPC分类号： H01S5/00 ,  H01S5/34

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S2301/173

摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.

摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。 这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用。 ISL通常遇到几个问题，其中包括由于较大的动量传递而引起的缓慢的内插弛豫时间，以及初始和最终电子状态在井间跃迁中的小波函数重叠。 总的来说，现有技术的ISL受到子带间反弹的影响。 本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反演。 该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。

公开(公告)号：US20160005921A1

公开(公告)日：2016-01-07

申请号：US14789438

申请日：2015-07-01

申请人： Sergey Suchalkin ,  Gregory Belenky ,  Leon Shterengas ,  David Westerfeld

发明人： Sergey Suchalkin ,  Gregory Belenky ,  Leon Shterengas ,  David Westerfeld

IPC分类号： H01L33/08 ,  G01N21/3504 ,  H01L33/30 ,  H01L33/06 ,  H01L33/00

CPC分类号： H01L33/08 ,  G01N21/314 ,  G01N21/3504 ,  G01N2021/3181 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/30

摘要： An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation.

摘要翻译： 公开了一种针对低成本气体或其他非固体物质检测系统进行了优化的LED，其发射来自同一孔径的两个波长（“颜色”）的电磁辐射。 LED装置发射以目标检测非固体物质的吸收线为中心的波长的光，并且发射具有不被目标非固体物质吸收的波长的参考线，同时两个波长都透过 低损失的气氛。 由于吸收和参考波长从相同的精确孔径发射，所以两个波​​长都可以共享相同的光路，减小了检测器的尺寸和成本，同时还减少了由于光路变化导致的潜在的误差源。

公开(公告)号：US08571082B2

公开(公告)日：2013-10-29

申请号：US13012627

申请日：2011-01-24

申请人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober ,  Mikhail Belkin

发明人： Gregory Belenky ,  John D. Bruno ,  Mikhail V. Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard L. Tober ,  Mikhail Belkin

IPC分类号： H01S5/00 ,  H01S3/10

CPC分类号： H01S5/0622 ,  B82Y20/00 ,  H01S5/0614 ,  H01S5/12 ,  H01S5/322 ,  H01S5/3401 ,  H01S5/3402

摘要： The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

摘要翻译： 本发明通过斯塔克效应提供具有电控折射率的QCL器件。 通过改变有源区域中的电场，可以改变激光能级之间的能量间隔，因此可以控制激光波长附近的光谱区域中的有效折射率。

公开(公告)号：US20050033122A1

公开(公告)日：2005-02-10

申请号：US10757480

申请日：2004-01-15

申请人： Thomas Balkin ,  Gregory Belenky ,  Stanley Hall ,  Gary Kamimori ,  Daniel Redmond ,  Helen Sing ,  Maria Thomas ,  David Thorne ,  Nancy Wesensten

发明人： Thomas Balkin ,  Gregory Belenky ,  Stanley Hall ,  Gary Kamimori ,  Daniel Redmond ,  Helen Sing ,  Maria Thomas ,  David Thorne ,  Nancy Wesensten

IPC分类号： G06Q10/00 ,  A61B5/11 ,  A61B5/16 ,  G06F19/00 ,  G06Q50/00 ,  A61B5/00

CPC分类号： A61B5/16 ,  A61B5/11 ,  A61B5/4806 ,  A61B5/4812 ,  G06F19/00 ,  G16H10/60 ,  G16H15/00 ,  G16H50/50 ,  Y02A90/26

摘要： An apparatus and a method for predicting cognitive performance of an individual based on factors including preferably sleep history and the time of day. The method facilitates the creation of predicted cognitive preformance curves that allow an individual to set his/her sleep times to produce higher levels of cognitive performance. The method also facilitates the reconstruction of past cognitive performance levels based on sleep history.

摘要翻译： 基于包括优选睡眠史和时间的因素来预测个体的认知表现的装置和方法。 该方法有助于创建预测的认知能力曲线，其允许个人设置他/她的睡眠时间以产生更高水平的认知表现。 该方法还有助于基于睡眠史重建过去的认知表现水平。

公开(公告)号：US20090132332A1

公开(公告)日：2009-05-21

申请号：US12253703

申请日：2008-10-17

申请人： Gregory Belenky ,  Hans Van Dongen

发明人： Gregory Belenky ,  Hans Van Dongen

IPC分类号： G06Q10/00

CPC分类号： G06Q10/109 ,  G06Q10/06311

摘要： Computer implemented scheduling systems and associated methods are disclosed. In one embodiment, a method for deriving a roster includes generating a roster within the operational constraint by assigning a plurality of workers to a plurality of individual shifts; calculating a value of the operational outcome based on the assigned shifts in the roster; calculating an overall fatigue value for the assigned individual workers based on the assigned shifts in the roster; and determining whether the generated roster is optimized based on the calculated value of the operational outcome and the overall fatigue value of the workers.

摘要翻译： 公开了计算机实现的调度系统和相关方法。 在一个实施例中，用于导出花名册的方法包括通过将多个工作者分配到多个单独的班次来在所述操作约束内生成花名册; 根据名册上指定的班次计算运行结果的价值; 根据名册上指定的班次计算指定个体工人的整体疲劳价值; 并且基于所计算的操作结果的值和所述工人的整体疲劳值来确定所生成的花名是否被优化。

公开(公告)号：US20060056466A1

公开(公告)日：2006-03-16

申请号：US11206505

申请日：2005-08-18

申请人： Gregory Belenky ,  John Bruno ,  Mikhail Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard Tober

发明人： Gregory Belenky ,  John Bruno ,  Mikhail Kisin ,  Serge Luryi ,  Leon Shterengas ,  Sergey Suchalkin ,  Richard Tober

IPC分类号： H01S3/10

CPC分类号： H01S5/0622 ,  B82Y20/00 ,  H01S5/322 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/3422

摘要： A semiconductor light source is disclosed comprising a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. Radiative recombination occurs between the electrons and holes, accumulated in the ground states of the triangular potential wells formed in the high- and low-affinity layers of each active region periods. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

摘要翻译： 公开了一种半导体光源，其包括基底，下部和上部包层，具有嵌入的有源区的波导区和用于提供波长调谐所需的电压的电触点。 有源区包括夹在电荷累积层之间的单个或多个异质结期。 每个有源区周期包括具有II型带对准的更高和更低的亲和力半导体层。 电荷累积层中的电荷载流子积累导致电场积聚，并导致在较高和较低亲和层中形成大致三角形的电子和空穴势阱。 可以通过电注入或光泵浦在有源区域中产生非平衡载流子。 辐射复合发生在电子和空穴之间，累积在每个有效区域周期的高亲和力层和低亲和层中形成的三角势阱的基态中。 可以通过改变有源区域上的电压降来调整三角形阱中的基态能量和辐射波长。

公开(公告)号：US06819696B1

公开(公告)日：2004-11-16

申请号：US09957531

申请日：2001-09-21

申请人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

发明人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

IPC分类号： H01S500

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S2301/173

摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 &mgr;m) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.

摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。 这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用.ISL通常遇到几个问题，包括由于大的动量传递而引起的慢内插子带松弛时间，以及初始和最终电子的小波函数重叠 状态在井间转变。 总的来说，现有技术的ISL具有弱的子带内群体反转。本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反转。 该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。