公开(公告)号：US20050041711A1

公开(公告)日：2005-02-24

申请号：US10956590

申请日：2004-09-29

申请人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

发明人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

IPC分类号： H01S5/00 ,  H01S5/34

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S2301/173

摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.

摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。 这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用。 ISL通常遇到几个问题，其中包括由于较大的动量传递而引起的缓慢的内插弛豫时间，以及初始和最终电子状态在井间跃迁中的小波函数重叠。 总的来说，现有技术的ISL受到子带间反弹的影响。 本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反演。 该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。

公开(公告)号：US06819696B1

公开(公告)日：2004-11-16

申请号：US09957531

申请日：2001-09-21

申请人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

发明人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

IPC分类号： H01S500

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S2301/173

摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 &mgr;m) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.

摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。 这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用.ISL通常遇到几个问题，包括由于大的动量传递而引起的慢内插子带松弛时间，以及初始和最终电子的小波函数重叠 状态在井间转变。 总的来说，现有技术的ISL具有弱的子带内群体反转。本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反转。 该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。

公开(公告)号：US07310361B2

公开(公告)日：2007-12-18

申请号：US10956590

申请日：2004-09-29

申请人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

发明人： Gregory Belenky ,  Mitra Dutta ,  Mikhail Kisin ,  Serge Luryi ,  Michael Stroscio

IPC分类号： H01S5/00

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S2301/173

摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions.ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion.The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.

摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。 这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用。 ISL通常遇到几个问题，其中包括由于较大的动量传递而引起的缓慢的内插弛豫时间，以及初始和最终电子状态在井间跃迁中的小波函数重叠。 总的来说，现有技术的ISL受到子带间反弹的影响。 本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反演。 该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。

公开(公告)号：US06188808B1

公开(公告)日：2001-02-13

申请号：US09315425

申请日：1999-05-20

申请人： Weimin Zhou ,  Paul H. Shen ,  Mitra Dutta ,  Jagadeesh Pamulapati

发明人： Weimin Zhou ,  Paul H. Shen ,  Mitra Dutta ,  Jagadeesh Pamulapati

IPC分类号： G02F1035

CPC分类号： G02B6/12004 ,  G02B2006/1215 ,  H01Q3/2676

摘要： An optical signal processor is implemented as a monolithically integrated semiconductor structure having optical waveguide devices forming beam splitters, optical amplifiers and optical phase shifters. The monolithic structure photonically controls a phased-array microwave antenna. Phase-locked master and slave lasers generate orthogonal light beams having a difference frequency that corresponds to the microwave carrier frequency of the phased-array antenna. The lasers feed the signal processor, which performs beam splitting, optical amplifying and phase shifting functions. A polarizer and an array of diode detectors convert optical output signals from the signal processor into microwave signals that feed the phased-array antenna. The optical waveguides of the signal processor are fabricated in a single selective epitaxial growth step on a semiconductor substrate.

摘要翻译： 光信号处理器被实现为具有形成分束器，光放大器和光移相器的光波导器件的单片集成半导体结构。 单片结构光子控制相控阵微波天线。 锁相主激光器和从属激光器产生具有对应于相控阵天线的微波载波频率的差频的正交光束。 激光器馈送信号处理器，其执行光束分离，光放大和相移功能。 偏振器和二极管检测器阵列将来自信号处理器的光输出信号转换成馈入相控阵天线的微波信号。 在半导体衬底上的单个选择性外延生长步骤中制造信号处理器的光波导。

公开(公告)号：US5412225A

公开(公告)日：1995-05-02

申请号：US199043

申请日：1994-02-18

申请人： Mitra Dutta ,  Weimin Zhou ,  Hongen Shen ,  Jagadeesh Pamulapati

发明人： Mitra Dutta ,  Weimin Zhou ,  Hongen Shen ,  Jagadeesh Pamulapati

IPC分类号： G02F1/017 ,  H01L31/0352 ,  H01L33/00 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/0352 ,  B82Y20/00 ,  G02F1/01725 ,  G02F2001/01758 ,  G02F2001/01766

摘要： An opto-electronic semiconductor device including a variable strained layered quantum well structure having at least two superimposed heavy- and light-hole triangular bottom valance band quantum wells with mutually opposite slopes. Upon the application of a bias potential across a thickness dimension of the quantum wells, an electric field is generated therethrough which produces an interchange of the confined energy levels of heavy-holes and light-holes in the quantum wells which causes a change in the transmission characteristics of light passing through the device as a result of the heavy- and light-hole energy bands having different light absorption anisotropy.

摘要翻译： 一种光电子半导体器件，包括具有相互相对的斜率的至少两个叠加的重和轻三角形底值带隙量子阱的可变应变分层量子阱结构。 当在量子阱的厚度尺寸上施加偏置电位时，通过其产生电场，其产生量子阱中的重孔和光空洞的限定能级的交换，这导致传输的变化 由于具有不同光吸收各向异性的重和光空穴能带的结果，通过该装置的光的特性。

公开(公告)号：US5264711A

公开(公告)日：1993-11-23

申请号：US945040

申请日：1992-09-15

申请人： Mitra Dutta ,  Harold L. Grubin ,  Gerald J. Iafrate ,  Ki Wook Kim ,  Michael A. Stroscio

发明人： Mitra Dutta ,  Harold L. Grubin ,  Gerald J. Iafrate ,  Ki Wook Kim ,  Michael A. Stroscio

IPC分类号： H01L29/12 ,  H01L33/00 ,  H01L29/02

CPC分类号： H01L29/125 ,  B82Y10/00

摘要： A polar semiconductor quantum wire for use in electronic and opto-electronic devices. The polar semiconductor quantum wire is either completely or partially encapsulated in metal to reduce the strength of the scattering potential associated with interface optical phonons normally established at the lateral boundaries of polar semiconductor quantum wires. Metal alone or metal employed in conjunction with modulation doping enhances the transport of charge carriers within the polar semiconductor quantum wire.

摘要翻译： 一种用于电子和光电子器件的极性半导体量子线。 极性半导体量子线被完全或部分地封装在金属中以降低通常在极性半导体量子线的横向边界处建立的界面光学声子相关的散射电位的强度。 与调制掺杂结合使用的金属或金属增强了极性半导体量子线内的电荷载流子的传输。

公开(公告)号：US20060169970A1

公开(公告)日：2006-08-03

申请号：US11051270

申请日：2005-02-03

申请人： Michael Wraback ,  Mitra Dutta ,  Paul Shen

发明人： Michael Wraback ,  Mitra Dutta ,  Paul Shen

IPC分类号： H01L31/109

CPC分类号： G02F1/01725 ,  B82Y20/00 ,  G02F2001/0157 ,  H01L21/02403 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/06

摘要： Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer (e.g., a GaAs layer) having a first crystalline phase can then be deposited upon the quantum well structure. Thereafter, a second crystalline layer (e.g., a GaN layer) having a second crystalline phase and a thickness thereof can be formed upon the first crystalline layer to thereby induce an anisotropic strain in the quantum well structure to produce a quantum well device thereof. Additionally, the second crystalline layer (e.g., GaN) can be formed from a transparent material and utilized as an anti-reflection layer. By properly choosing the thickness of the second crystalline layer (e.g., a GaN layer), a desired anisotropic strain as well as a desired anti-reflection wavelength can be achieved.

摘要翻译： 本文公开了在半导体量子阱结构中产生各向异性应变以诱发其各向异性的方法和装置。 首先，提供衬底和形成在衬底上的量子阱结构。 具有第一结晶相的第一晶体层（例如，GaAs层）可以沉积在量子阱结构上。 此后，可以在第一结晶层上形成具有第二结晶相和其厚度的第二结晶层（例如，GaN层），从而在量子阱结构中引起各向异性应变以产生其量子阱器件。 另外，第二晶体层（例如，GaN）可以由透明材料形成并用作抗反射层。 通过适当地选择第二结晶层（例如，GaN层）的厚度，可以实现期望的各向异性应变以及期望的抗反射波长。

公开(公告)号：US5198659A

公开(公告)日：1993-03-30

申请号：US867726

申请日：1992-03-23

申请人： Doran D. Smith ,  Mitra Dutta ,  Kwong-Kit Choi

发明人： Doran D. Smith ,  Mitra Dutta ,  Kwong-Kit Choi

IPC分类号： H01L31/0352 ,  H01L31/101

CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/101

摘要： An IR photodetector including an IR semiconductor detector with conductive layers on opposite, parallel surfaces. A semiconductor substrate supports the semiconductor IR detector. A circuit is connected across the semiconductor IR detector to provide a bias voltage and for measuring current flow through the semiconductor IR detector. The semiconductor IR detector has a lattice structure made up of a series of potential wells separated by relatively wide potential barriers such that each well has two confined energy levels. A thin spike barrier is placed in the center of alternate potential wells to tailor the absorption characteristics of the semiconductor IR detector. Multicolor operation is achieved by selecting the appropriate well widths for a first group of potential wells and by placing thin spike barriers in a second group of potential wells that are alternately placed between the wells of the first group.

摘要翻译： 一种红外光电检测器，其包括在相对的平行表面上具有导电层的IR半导体检测器。 半导体衬底支撑半导体IR检测器。 电路跨越半导体IR检测器连接以提供偏置电压并用于测量通过半导体IR检测器的电流。 半导体IR检测器具有由相当宽的势垒隔开的一系列势阱组成的晶格结构，使得每个阱具有两个限制能级。 薄的尖峰势垒置于交替势阱的中心，以调整半导体IR检测器的吸收特性。 通过选择第一组潜在井的适当的井宽以及将交替放置在第一组的井之间的第二组潜在井中的薄的尖峰阻挡层放置来实现多色操作。

公开(公告)号：US5608566A

公开(公告)日：1997-03-04

申请号：US513701

申请日：1995-08-11

申请人： Mitra Dutta ,  Joel R. Shappirio

发明人： Mitra Dutta ,  Joel R. Shappirio

IPC分类号： G02F1/017 ,  G02F1/313 ,  G02F1/03 ,  G02B6/10 ,  G02F1/295

CPC分类号： B82Y20/00 ,  G02F1/3133 ,  G02F1/017 ,  G02F2001/3135

摘要： A multiple quantum well layer is sandwiched between two core waveguide layers, which are, in turn, sandwiched by two cladding layers. This layering is deposited on a substrate with a metal contact and the top cladding layer is formed so as to form at least two parallel channels with metal contacts. The refractive indices of the various materials comprising the layers are chosen such that the cladding layers and the multiple quantum well layer have refractive indices which are less than the refractive index of the core waveguide layers, but which are different from one another. In operation, an electric field is applied to the structure via metal contacts on the parallel channels. Depending on the magnitude of the electric field the optical signal may be switched from one channel to the other channel and depending on the magnitude and direction of the electric field and the intensity of the optical signal, the optical signal may be switched from the upper waveguide to the lower waveguide.

摘要翻译： 多量子阱层被夹在两个芯波导层之间，这两个芯波导层又被两个包覆层夹在一起。 该层叠被沉积在具有金属接触的基板上，并且形成顶部覆层以形成具有金属接触件的至少两个平行通道。 选择包括这些层的各种材料的折射率使得包层和多量子阱层的折射率小于芯波导层的折射率，但彼此不同。 在操作中，电场通过并联通道上的金属触点施加到结构。 根据电场的大小，光信号可以从一个通道切换到另一个通道，并且根据电场的大小和方向以及光信号的强度，光信号可以从上波导切换 到下波导。

公开(公告)号：US5459334A

公开(公告)日：1995-10-17

申请号：US309214

申请日：1994-09-20

申请人： Mitra Dutta ,  Michael A. Stroscio ,  Vladimir V. Mitin ,  Rimvydas Mickevicius

发明人： Mitra Dutta ,  Michael A. Stroscio ,  Vladimir V. Mitin ,  Rimvydas Mickevicius

IPC分类号： H01L29/12 ,  H01L29/205 ,  H01L31/08

CPC分类号： B82Y10/00 ,  H01L29/125

摘要： A quantum wire embedded in another material or a quantum wire which is free standing. Specifically, the quantum wire structure is fabricated such that a quantum well semiconductor material, for example Gallium Arsenide (GaAS), is embedded in a quantum barrier semiconductor material, for example Aluminum Arsenide (AlAs). Preferably, the entire quantum wire structure is engineered to form multiple subbands and is limited to a low dimensional quantum structure. The dimensions of the quantum wire structure are preferably around 150.times.250 .ANG.. This structure has a negative absolute conductance at a predetermined voltage and temperature. As a result of the resonant behavior of the density of states, the rates of electron scattering in the passive region (acoustic phonon and ionized impurity scattering as well as absorption of optical phonons) decrease dramatically as the electron kinetic energy increases.

摘要翻译： 嵌入另一种材料中的量子线或自由站立的量子线。 具体地，量子线结构被制造成使量子阱半导体材料，例如砷化镓（GaAS）被嵌入量子势垒半导体材料，例如砷化铝（AlAs）中。 优选地，整个量子线结构被设计成形成多个子带并被限制于低维量子结构。 量子线结构的尺寸优选为150×250左右。 该结构在预定电压和温度下具有负的绝对电导。 作为状态密度的共振行为的结果，随着电子动能增加，被动区域中的电子散射速率（声学声子和离子化杂质散射以及光学声子的吸收）显着降低。