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公开(公告)号:US20210397128A1
公开(公告)日:2021-12-23
申请号:US17347633
申请日:2021-06-15
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Kazuyoshi HIROSE , Yoshitaka KUROSAKA , Yuu TAKIGUCHI
Abstract: An image output device of the disclosure facilitates enlargement of a stereoscopic image and includes a spatial light modulator, an image irradiation unit, and an address light irradiation unit. The spatial light modulator includes a main surface, a back surface, and pixels, reflects light emitted to the main surface, and modulates a phase of the light for each pixel. The image irradiation unit irradiates the main surface with light including an optical image. The address light irradiation unit irradiates the back surface with address light including a diffraction grating pattern. Each pixel of the spatial light modulator changes a phase modulation amount according to the intensity of the address light from a back surface. The address light irradiation unit dynamically change a diffraction grating pattern's direction on the back surface. The image irradiation unit irradiates the main surface with the optical image corresponding to the diffraction grating pattern's direction.
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公开(公告)号:US20190356113A1
公开(公告)日:2019-11-21
申请号:US16451580
申请日:2019-06-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yoshitaka KUROSAKA , Yuu Takiguchi , Takahiro Sugiyama , Kazuyoshi Hirose , Yoshiro Nomoto
Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0
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公开(公告)号:US20190288483A1
公开(公告)日:2019-09-19
申请号:US16433127
申请日:2019-06-06
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takahiro SUGIYAMA , Yuu TAKIGUCHI , Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Yoshiro NOMOTO , Soh UENOYAMA
Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.
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公开(公告)号:US20180109075A1
公开(公告)日:2018-04-19
申请号:US15556429
申请日:2016-03-11
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yoshitaka KUROSAKA , Yuu TAKIGUCHI , Takahiro SUGIYAMA , Kazuyoshi HIROSE , Yoshiro NOMOTO
CPC classification number: H01S5/18358 , H01S5/0683 , H01S5/105 , H01S5/187 , H01S5/42 , H01S5/423 , H01S2301/18 , H01S2301/20
Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0
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公开(公告)号:US20180074227A1
公开(公告)日:2018-03-15
申请号:US15701918
申请日:2017-09-12
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yoshiro NOMOTO , Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Takahiro SUGIYAMA , Soh UENOYAMA
CPC classification number: G02B1/002 , G02B5/008 , G02F1/19 , G02F2202/101 , G02F2202/30
Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 μm. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.
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公开(公告)号:US20230198224A1
公开(公告)日:2023-06-22
申请号:US17925089
申请日:2021-05-27
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Yuu TAKIGUCHI , Akio ITO , Tadataka EDAMURA , Takahiko YAMANAKA , Shigeo HARA
CPC classification number: H01S5/026 , H01S5/34313 , H01S5/34353 , H01S5/11 , H01S5/04254 , H01S5/423 , H01S5/18308 , H01S2304/04
Abstract: An optical device of one embodiment outputs light in a short-wavelength range such as a visible range. The optical device includes a UC layer, first and second light-confinement layers, and a resonance mode forming layer. The UC layer contains an upconversion material receiving excitation light in a first wavelength range and outputting light in a second wavelength range. The first light-confinement layer has a characteristic of reflecting part of the second wavelength-range light. The second light-confinement layer has a characteristic of reflecting part of the second wavelength-range light and transmitting the remainder, and is disposed such that the UC layer locates between the first and second light-confinement layers. The resonance mode forming layer locates between the UC layer and the first or second light-confinement layer, includes a base layer and plural modified refractive index regions, and forms a resonance mode of the second wavelength-range light.
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公开(公告)号:US20200373740A1
公开(公告)日:2020-11-26
申请号:US16769828
申请日:2018-11-28
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Kazuyoshi HIROSE , Yoshitaka KUROSAKA , Yuu TAKIGUCHI , Takahiro SUGIYAMA
Abstract: The present embodiment relates to a light-emitting device or the like having a structure capable of reducing one power of ±1st-order light with respect to the other power. The light-emitting device includes a substrate, a light-emitting portion, and a phase modulation layer including a base layer and a plurality of modified refractive index regions. Each of the plurality of modified refractive index regions has a three-dimensional shape defined by a first surface facing the substrate, a second surface positioned on a side opposite to the substrate with respect to the first surface, and a side surface. In the three-dimensional shape, at least one of the first surface, the second surface, and the side surface has a portion inclined with respect to a main surface.
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公开(公告)号:US20200287350A1
公开(公告)日:2020-09-10
申请号:US16756513
申请日:2018-10-02
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Takahiro SUGIYAMA
Abstract: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.
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公开(公告)号:US20180026419A1
公开(公告)日:2018-01-25
申请号:US15656096
申请日:2017-07-21
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Kazuyoshi HIROSE , Yoshitaka KUROSAKA , Takahiro SUGIYAMA , Yuu TAKIGUCHI , Yoshiro NOMOTO
CPC classification number: H01S5/0085 , H01S5/0265 , H01S5/183 , H01S5/18338 , H01S5/18363 , H01S5/18386 , H01S5/18391 , H01S5/18394 , H01S5/187
Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.
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公开(公告)号:US20180006426A1
公开(公告)日:2018-01-04
申请号:US15541515
申请日:2016-01-07
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yuu TAKIGUCHI , Kazuyoshi HIROSE , Yoshiro NOMOTO , Takahiro SUGIYAMA , Yoshitaka KUROSAKA
IPC: H01S5/02 , G02B27/10 , G02F1/1335 , H01S5/18
CPC classification number: H01S5/02 , G02B27/1026 , G02B27/22 , G02B27/26 , G02F1/133504 , G02F1/133553 , G02F2001/133638 , H01S3/1065 , H01S5/02236 , H01S5/026 , H01S5/0425 , H01S5/0624 , H01S5/06243 , H01S5/105 , H01S5/14 , H01S5/18 , H01S5/18302 , H01S5/18361 , H01S5/34313 , H01S5/4093 , H01S5/423 , H01S2301/20
Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.
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