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公开(公告)号：US09025365B2
公开(公告)日：2015-05-05
申请号：US13899283
申请日：2013-05-21
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Frederick Perner
CPC classification number: G11C13/004 , G11C2213/77
Abstract: A method for reading the state of a memory element within a crossbar memory array includes storing a first electric current sensed from a half-selected target memory element within the crossbar memory array; and outputting a final electric current based on the stored first electric current and a second electric current sensed from the target memory element when the target memory element is fully selected.
Abstract translation: 用于读取交叉开关存储器阵列中的存储器元件的状态的方法包括将从半选择的目标存储器元件感测的第一电流存储在所述横向存储器阵列内; 并且当所述目标存储器元件被完全选择时，基于所存储的第一电流和从所述目标存储元件感测的第二电流输出最终电流。
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公开(公告)号：US20140204651A1
公开(公告)日：2014-07-24
申请号：US14048521
申请日：2013-10-08
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Frederick Perner
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C5/063 , G11C13/0002 , G11C2013/0045 , G11C2211/5645
Abstract: A method for reading a memory element within a crossbar array includes switching a column line connected to a target memory element of the crossbar array to connected to an input of a current mirror; applying an error voltage to unselected rows of the crossbar array; applying a sense voltage to a row line connected to the target memory element; and outputting a current with said current mirror.
Abstract translation: 用于读取交叉开关阵列中的存储器元件的方法包括切换连接到交叉开关阵列的目标存储器元件的列线以连接到电流镜的输入; 将误差电压施加到交叉开关阵列的未选择的行; 对连接到目标存储元件的行线施加感测电压; 并且用所述电流镜输出电流。
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公开(公告)号：US08780613B1
公开(公告)日：2014-07-15
申请号：US14048521
申请日：2013-10-08
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Frederick Perner
IPC: G11C11/00
CPC classification number: G11C13/004 , G11C5/063 , G11C13/0002 , G11C2013/0045 , G11C2211/5645
Abstract: A method for reading a memory element within a crossbar array includes switching a column line connected to a target memory element of the crossbar array to connected to an input of a current mirror; applying an error voltage to unselected rows of the crossbar array; applying a sense voltage to a row line connected to the target memory element; and outputting a current with said current mirror.
Abstract translation: 用于读取交叉开关阵列中的存储器元件的方法包括切换连接到交叉开关阵列的目标存储器元件的列线以连接到电流镜的输入; 将误差电压施加到交叉开关阵列的未选择的行; 对连接到目标存储元件的行线施加感测电压; 并且用所述电流镜输出电流。
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公开(公告)号：US20150356006A1
公开(公告)日：2015-12-10
申请号：US14759713
申请日：2013-01-14
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Frederick Perner
IPC: G06F12/02
CPC classification number: G06F12/0246 , G06F2212/7201 , G11C7/1006 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C27/026 , G11C2013/0054 , G11C2013/0057 , G11C2213/77 , H03K19/1776
Abstract: A method for implementing nonvolatile memory array logic includes configuring a crosspoint memory array in a first configuration and applying an input voltage to the crosspoint array in the first configuration to produce a setup voltage. The crosspoint array is configured in a second configuration and an input voltage is applied to the crosspoint array in the second configuration to produce a sense voltage. The setup voltage and the sense voltage compared to perform a logical operation on data stored in the crosspoint array. A system for performing nonvolatile memory array logic is also provided.
Abstract translation: 一种用于实现非易失性存储器阵列逻辑的方法包括以第一配置配置交叉点存储器阵列，并且在第一配置中向交叉点阵列施加输入电压以产生建立电压。 交叉点阵列被配置为第二配置，并且在第二配置中将输入电压施加到交叉点阵列以产生感测电压。 相对于设置电压和感测电压，对存储在交叉点阵列中的数据执行逻辑运算。 还提供了一种用于执行非易失性存储器阵列逻辑的系统。
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Patent Agency Ranking
公开(公告)号：US20150187414A1
公开(公告)日：2015-07-02
申请号：US14415268
申请日：2012-07-27
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Frederick Perner
CPC classification number: G11C13/004 , G11C7/062 , G11C7/067 , G11C7/106 , G11C27/02 , G11C2013/0042 , G11C2013/0054 , G11C2213/77 , H01L45/12
Abstract: A dynamic sense circuit to determine memristor states within a memristor crossbar array that includes a differential comparator made up of a resistance capacitance (RC) network to capture a reference voltage and a differential pre-amp to operate in an open loop mode to dynamically compare the reference voltage to a sense voltage. An alternating current (AC) coupled amplifier receives the output of the comparator and outputs an amplified signal. A set-reset (SR) latch samples and holds the amplified signal as a digital value.
Abstract translation: 一种动态感测电路，用于确定忆阻器交叉开关阵列内的忆阻器状态，其包括由电阻电容（RC）网络构成的差分比较器，以捕获参考电压和差分前置放大器以在开环模式下操作以动态地比较 参考电压到感测电压。 交流（AC）耦合放大器接收比较器的输出并输出放大的信号。 置位（SR）锁存器将放大的信号采样并保存为数字值。
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公开(公告)号：US09846644B2
公开(公告)日：2017-12-19
申请号：US14759713
申请日：2013-01-14
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Frederick Perner
IPC: G06F12/02 , G11C7/10 , G11C13/00 , G11C27/02 , H03K19/177
CPC classification number: G06F12/0246 , G06F2212/7201 , G11C7/1006 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C27/026 , G11C2013/0054 , G11C2013/0057 , G11C2213/77 , H03K19/1776
Abstract: A method for implementing nonvolatile memory array logic includes configuring a crosspoint memory array in a first configuration and applying an input voltage to the crosspoint array in the first configuration to produce a setup voltage. The crosspoint array is configured in a second configuration and an input voltage is applied to the crosspoint array in the second configuration to produce a sense voltage. The setup voltage and the sense voltage compared to perform a logical operation on data stored in the crosspoint array. A system for performing nonvolatile memory array logic is also provided.
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公开(公告)号：US20140215143A1
公开(公告)日：2014-07-31
申请号：US13755667
申请日：2013-01-31
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Matthew D. Pickett , Frederick Perner
IPC: G11C15/00
CPC classification number: G11C15/00 , G11C13/0007 , G11C15/046 , G11C2213/77
Abstract: Examples disclose a crossbar memory with a first crossbar to write data values corresponding to a word. The crossbar memory further comprises a second crossbar, substantially parallel to the first crossbar, to receive voltage for activation of data values across the second crossbar. Additionally, the examples of the crossbar memory provide an output line that interconnects with the crossbars at junctions, to read the data values at the junctions. Further, the examples of the crossbar memory provide a logic module to determine whether the second crossbar data values correspond to the word written in the first crossbar.
Abstract translation: 示例公开了具有第一交叉开关以写入对应于单词的数据值的交叉开关存储器。 交叉开关存储器还包括基本上平行于第一交叉开关的第二交叉开关，用于接收跨越第二横杆激活数据值的电压。 另外，交叉开关存储器的示例提供了一个输出线，其与交叉点处的交叉点相互连接，以便读取交汇处的数据值。 此外，交叉开关存储器的示例提供逻辑模块以确定第二交叉开关数据值是否对应于在第一横杠中写入的字。
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公开(公告)号：US09214231B2
公开(公告)日：2015-12-15
申请号：US13755667
申请日：2013-01-31
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Matthew D Pickett , Frederick Perner
CPC classification number: G11C15/00 , G11C13/0007 , G11C15/046 , G11C2213/77
Abstract: Examples disclose a crossbar memory with a first crossbar to write data values corresponding to a word. The crossbar memory further comprises a second crossbar, substantially parallel to the first crossbar, to receive voltage for activation of data values across the second crossbar. Additionally, the examples of the crossbar memory provide an output line that interconnects with the crossbars at junctions, to read the data values at the junctions. Further, the examples of the crossbar memory provide a logic module to determine whether the second crossbar data values correspond to the word written in the first crossbar.
Abstract translation: 示例公开了具有第一交叉开关以写入对应于单词的数据值的交叉开关存储器。 交叉开关存储器还包括基本上平行于第一交叉开关的第二交叉开关，用于接收跨越第二横杆激活数据值的电压。 另外，交叉开关存储器的示例提供了一个输出线，其与交叉点处的交叉点相互连接，以便读取交汇处的数据值。 此外，交叉开关存储器的示例提供逻辑模块以确定第二交叉开关数据值是否对应于在第一横杠中写入的字。
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公开(公告)号：US20140347910A1
公开(公告)日：2014-11-27
申请号：US13899283
申请日：2013-05-21
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Frederick Perner
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C2213/77
Abstract: A method for reading the state of a memory element within a crossbar memory array includes storing a first electric current sensed from a half-selected target memory element within the crossbar memory array; and outputting a final electric current based on the stored first electric current and a second electric current sensed from the target memory element when the target memory element is fully selected.
Abstract translation: 用于读取交叉开关存储器阵列中的存储器元件的状态的方法包括将从半选择的目标存储器元件感测的第一电流存储在所述横向存储器阵列内; 并且当所述目标存储器元件被完全选择时，基于所存储的第一电流和从所述目标存储元件感测的第二电流输出最终电流。
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