公开(公告)号：US20170291414A1

公开(公告)日：2017-10-12

申请号：US15516648

申请日：2014-10-28

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning GE ,  Leong Yap CHIA ,  Pin Chin LEE

IPC: B41J2/045 ,  B41J2/135 ,  B41J2/175

CPC classification number: B41J2/04581 ,  B41J2/04541 ,  B41J2/0458 ,  B41J2/135 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2202/17

Abstract: A printhead having a number of single-dimensional memristor banks is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of single-dimensional memristor banks. Each memristor bank includes a number of memristors arranged in a single dimension and a number of serially-connected de-multiplexers to selectively activate a target memristor of the memristor bank. The number of serially-connected de-multiplexers is equal to the number of memristors and an output of at least one de-multiplexer is an input into a subsequent de-multiplexer.

公开(公告)号：US20170323961A1

公开(公告)日：2017-11-09

申请号：US15657401

申请日：2017-07-24

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning GE ,  Leong Yap CHIA ,  Pin Chin LEE ,  Jose Jehrome RANDO

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/08

CPC classification number: H01L29/66575 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/78 ,  H05K2203/013

Abstract: In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.

公开(公告)号：US20170239941A1

公开(公告)日：2017-08-24

申请号：US15518934

申请日：2014-10-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Jianwen LUO ,  Leong Yap CHIA ,  Ning GE

IPC: B41J2/045 ,  B41J2/175

CPC classification number: B41J2/04541 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2202/17

Abstract: A print head with a number of memristors and inverters is described. The print head includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The print head also includes a number of memristor cells. Each memristor cell includes a memristor to store data, a voltage divider serially connected to the 116 memristor cell, and an inverter connected in parallel with the number of memristor cells and the voltage divider.

公开(公告)号：US20170069639A1

公开(公告)日：2017-03-09

申请号：US15119989

申请日：2014-03-14

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Leong Yap CHIA ,  Jose Jehrome Rando

IPC: H01L27/115 ,  H01L29/788 ,  B41J2/14 ,  H01L29/423

CPC classification number: H01L27/11519 ,  B41J2/14 ,  H01L21/28273 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/4238 ,  H01L29/78 ,  H01L29/7881

Abstract: An electronically programmable read-only memory (EPROM) cell includes a semiconductor substrate having source and drain regions; a floating gate, adjacent to the source and drain regions and separated from the semiconductor substrate by a first dielectric layer, the floating gate including: a polysilicon layer formed over the first dielectric layer; a first metal layer electrically connected to the polysilicon layer, where the surface area of the first metal layer is less than 1000 μm2; and a control gate comprising a second metal layer, capacitively coupled to the first metal layer through a second dielectric material disposed therebetween.

Abstract translation: 电子可编程只读存储器（EPROM）单元包括具有源区和漏区的半导体衬底; 浮置栅极，与源极和漏极区相邻并且通过第一介电层与半导体衬底分离，所述浮置栅极包括：形成在第一介电层上的多晶硅层; 电连接到多晶硅层的第一金属层，其中第一金属层的表面积小于1000μm2; 以及包括第二金属层的控制栅极，所述第二金属层通过设置在其间的第二介电材料电容耦合到所述第一金属层。

公开(公告)号：US20160332439A1

公开(公告)日：2016-11-17

申请号：US15111247

申请日：2014-01-17

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Leong Yap CHIA ,  Wai Mun WONG

IPC: B41J2/045 ,  G11C16/32 ,  G11C16/08

CPC classification number: B41J2/04541 ,  B41J2/04543 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/04586 ,  G11C16/08 ,  G11C16/32

Abstract: Addressing an EPROM on a printhead is described. In an example, a printhead includes an electronically programmable read-only memory (EPROM) having a plurality of cells arranged in rows and columns, each of the cells having a addressing port, a row select port, and a column select port. A conductor is coupled to the addressing portion of each of the plurality of cells, A column shift register is coupled to the column select ports of the plurality of cells, the column shift register having a register location for each column of the plurality of cells and having an input to receive a first input signal. A row shift register is coupled to row select ports of the plurality of cells, the row shift register having a register location for each row of the plurality of cells and having an input to receive a second input signal.

Abstract translation: 描述了在打印头上寻址EPROM。 在一个示例中，打印头包括具有以行和列排列的多个单元的电子可编程只读存储器（EPROM），每个单元具有寻址端口，行选择端口和列选择端口。 一个导体耦合到多个单元的每个单元的寻址部分，列移位寄存器耦合到多个单元的列选择端口，列移位寄存器具有针对多个单元的每一列的寄存器位置， 具有用于接收第一输入信号的输入。 行移位寄存器耦合到多个单元的行选择端口，行移位寄存器具有针对多个单元的每行的寄存器位置，并具有用于接收第二输入信号的输入。