公开(公告)号：US20190237337A1

公开(公告)日：2019-08-01

申请号：US16328228

申请日：2018-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako MATSUI ,  Tatehito USUI ,  Masaru IZAWA ,  Kenichi KUWAHARA

IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/308 ,  H01L21/67 ,  H01J37/32 ,  G01B11/06

CPC classification number: H01L21/30655 ,  G01B11/0625 ,  H01J37/32082 ,  H01J37/32715 ,  H01J37/32963 ,  H01J2237/24578 ,  H01J2237/332 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time. There are included the depo process (S1) of introducing a reactive gas having a deposit property to a processing chamber and forming a deposit layer over the surface of a pattern to be etched of a substrate to be etched, the etching process (S2) of removing a reaction product of the deposit layer and the surface of the pattern to be etched, and a monitoring process (S3) of irradiating light to the pattern to be etched at the time of the depo process of cycle etching for executing two processes alternately and working a fine pattern and monitoring a change amount of the film thickness of the deposit layer by change of a coherent light having a specific wavelength reflected by the pattern to be etched, the depo process being for forming the deposit layer, in which a processing condition of processes for forming the deposit layer of the next cycle and onward of cycle etching is determined so that an indicator of the depo film thickness calculated from the change amount of the film thickness of the deposit layer monitored falls in a predetermined range compared to reference data.

公开(公告)号：US20160079073A1

公开(公告)日：2016-03-17

申请号：US14626909

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Miyako MATSUI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO ,  Tetsuo ONO ,  Kazunori SHINODA

IPC: H01L21/3065

CPC classification number: H01L21/32137 ,  B81C1/00531 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136

Abstract: A plasma processing method includes: a first step of introducing a gas having reactivity with a film to be processed disposed in advance on a top surface of a wafer into a processing chamber to form an adhesion layer on the film; a second step of expelling a part of the gas remaining in the processing chamber while supply of the gas having reactivity is stopped; a third step of introducing a rare gas into the processing chamber to form a plasma and desorbing reaction products of the adhesion layer and the film to be processed using particles and vacuum ultraviolet light in the plasma; and a fourth step of expelling the reaction products while the plasma is not formed.

Abstract translation: 等离子体处理方法包括：将预先设置的待加工膜与反应性的气体引入晶片的上表面的第一步骤，以在膜上形成粘合层; 在停止具有反应性的气体的供给的同时排出残留在处理室中的一部分气体的第二步骤; 将稀有气体引入处理室中以在等离子体中形成等离子体并使用粒子和真空紫外光解吸粘合层和待加工膜的反应产物的第三步骤; 以及在不形成等离子体时排出反应产物的第四步骤。

公开(公告)号：US20180269118A1

公开(公告)日：2018-09-20

申请号：US15690660

申请日：2017-08-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako MATSUI ,  Kenichi KUWAHARA ,  Naoki YASUI ,  Masaru IZAWA ,  Tatehito USUI ,  Takeshi OHMORI

IPC: H01L21/66 ,  H01L21/311 ,  H01L21/67 ,  H01J37/32 ,  G01B11/06

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.