Abstract:
A charged particle apparatus includes: a charged particle source unit; a blanking electrode unit that blanks a charged particle beam launched from the charged particle source unit; a deflecting electrode unit that deflects the charged particle beam launched from the charged particle source unit and passing through the blanking electrode unit; an objective lens unit that converges the charged particle beam deflected by the deflecting electrode unit and radiates the charged particle beam to a surface of a sample; a secondary charged particle detection unit that detects a secondary charged particle generated from the sample irradiated with the charged particle beam; a signal processing unit that processes a signal obtained by detecting the secondary charged particle by the secondary charged particle detection unit; and a control unit that controls the entire apparatus. The control unit includes a transient signal correction unit that corrects a transient signal when the blanking of the charged particle beam is turned off by the blanking electrode. Thus, an image with no distortion can be obtained even when the blanking electrode is operated to turn on and off at a high speed and it is possible to perform measurement or inspection of a minute pattern with high precision.
Abstract:
To provide a charged particle beam apparatus capable of obtaining an image with high contrast and high visibility, the apparatus has: a charged particle optical system; a detection part to detect secondary charged particles generated from the sample; an image formation part to receive a detection signal from the detection part and form an image of the sample; an image processing part to process the image formed with the image formation part; and a display part to display the result of processing with the image processing part, wherein the image formation part has a pulse-count signal processing part to generate cumulative histogram information on a pulse signal component in the detection signal, set a threshold value for pulse signal detection using information on the generated cumulative histogram, and output a detection signal having a value higher than the set threshold value as a pulse signal.
Abstract:
The present invention prevents breakage of a chip by using a simple configuration even when an extraction-electrode power source cannot apply voltage to an extraction electrode due to a malfunction, etc. This charged particle beam device is provided with: a charged particle source; an extraction electrode that extracts charged particles from the charged particle source; an extraction-electrode power source that applies voltage to the extraction electrode; an accelerating electrode for accelerating the charged particles; an accelerating power source that applies voltage to the accelerating electrode; and a diode and a resistor which are connected in series between a middle stage of the accelerating power source and the output side of the extraction-electrode power source.
Abstract:
A charged particle beam system includes a charged particle beam device 101 and the detection circuit 114. The charged particle beam device 101 includes a first antenna 102 having a first resonant frequency and a second antenna 103 having a second resonant frequency. The detection circuit 114 includes a first amplitude detection unit 110 which detects a first amplitude of a signal after passing a first filter 107, a second amplitude detection unit 111 which detects a second amplitude of a signal after passing a second filter 108, and an amplitude comparison unit 113 which compares the first amplitude with the second amplitude.
Abstract:
A charged particle beam device includes a deflection unit that deflects a charged particle beam released from a charged particle source to irradiate a sample, a reflection plate that reflects secondary electrons generated from the sample, and a control unit that controls the deflection unit based on an image generated by detecting the secondary electrons reflected from the reflection plate. The deflection unit includes an electromagnetic deflection unit that electromagnetically scans with the charged particle beam by a magnetic field and an electrostatic deflection unit that electrostatically scans with the charged particle beam by an electric field. The control unit controls the electromagnetic deflection unit and the electrostatic deflection unit, superimposes an electromagnetic deflection vector generated by the electromagnetic scanning and an electrostatic deflection vector generated by the electrostatic scanning, and controls at least a trajectory of the charged particle beam.
Abstract:
Even in a case where a disturbance is applied from an adjacently disposed power supply circuit or the like, in order to realize a reduction in ripple, a high-voltage power supply device is configured to include a drive circuit, a transformer that boosts an output voltage of the drive circuit, a boost circuit that further boosts a voltage boosted by the transformer, a shield that covers the transformer and the boost circuit, a filter circuit that filters, smoothes, and outputs a high voltage output from the boost circuit, and an impedance loop circuit configured by connection of a plurality of impedance elements into a loop shape. A grounding point of the boost circuit, a grounding point of the shield, and a grounding point of the filter circuit are configured to be grounded via the impedance loop circuit, and this is applied to a high-voltage power supply unit that applies a high voltage to an electron gun of a charged particle beam apparatus.
Abstract:
A processing apparatus and a processing method are provided, which use a charged particle beam device that achieves defection of secondary electrons/reflected electrons at a large angle and cancels out noises of an electromagnetic deflector and an electrostatic deflector to suppress a position shift of a primary electron beam caused by circuit noises of a primary beam/secondary beam separation circuit. In the charged particle beam device that includes an electronic optical system radiating a concentrated electron beam onto a sample placed on a stage to perform scanning and captures an image of the sample, a reference signal and a signal generation unit of a voltage-source control signal applied to the electrostatic deflector generating the electrostatic deflector and a reference signal and a signal generation unit of a current-source control signal applied to the electromagnetic deflector generating a magnetic field are made common in an overlapping-electromagnetic-deflector control unit that controls a path of the secondary electrons/reflected electrons incident on a detector, and frequency characteristics and phase characteristics of the voltage control signal are coincident with those of the current-source control signal.
Abstract:
The present invention relates to a measurement and inspection device of a scanning-type electron beam system, and provides a technique for achieving a measuring/inspecting process with high precision in accordance with a scanning speed. A secondary electron signal detection system in the present measurement and inspection device is suitably applicable to a scanning control with a plurality of scanning speeds, and the device is provided with a detector 107 for detecting a secondary electron signal (SE) derived from an irradiation onto a sample 110 with an electron beam by a scanning control process, a preamplifier 30 for current-to-voltage converting and pre-amplifying the output, an analog signal processing and amplifying unit 51 to which the output of the preamplifier 30 is inputted to carry out an analog processing and amplifying process thereon as a secondary electron signal detection unit 50, an ADC 52 for analog-to-digital converting the output thereof, and an image processing unit 205 for generating an image for use in measurements or inspections based upon the output. A control unit 210 carries out a switching control of respective units including an LPF (12) inside the analog signal processing and amplifying unit 51, in accordance with a scanning speed or the like.
Abstract:
Technique capable of achieving shortening of settling time, which is caused by ringing, etc. of a blanking control signal is provided. A measuring/inspecting apparatus is configured to have a main blanking unit and a correction blanking control unit as a high-speed switching control unit of an electron beam. During the period of switching of a main blanking control signal from ON to OFF, a correction blanking control signal is applied in real time in synchronization with the switching. The ringing, etc. caused by the main blanking are corrected so as to be cancelled out by that, the settling time is shortened as a result.
Abstract:
A charged-particle beam system comprises: a charged-particle beam device containing a detection unit for detecting electrons generated by irradiating a sample with a charged-particle beam released from a charged particle source; and a signal detection unit in which a detection signal from the detection unit is input through a wiring. The signal detection unit comprises: a separation unit for separating into a rising signal and a falling signal the detection signal from the detection unit; a falling signal processing unit for at least eliminating ringing in the falling signal; and a combination unit generating and delivering a combined signal produced by combining the rising signal, which has been separated by the separation unit, with the falling signal wherefrom the ringing has been eliminated by the falling signal processing unit.