公开(公告)号：US09093490B2

公开(公告)日：2015-07-28

申请号：US12713317

申请日：2010-02-26

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/455 ,  C23C16/40 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68764 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45589 ,  H01L21/68771

摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.

摘要翻译： 公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于 基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

公开(公告)号：US20100260936A1

公开(公告)日：2010-10-14

申请号：US12753978

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/52 ,  C23C16/00 ,  C23C16/44

CPC分类号： H01L21/67207 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.

摘要翻译： 在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元 房间。 控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出 来自真空室的基板，并输出使基板旋转单元改变基板的方向的控制信号。

公开(公告)号：US20100116210A1

公开(公告)日：2010-05-13

申请号：US12615311

申请日：2009-11-10

申请人： HITOSHI KATO ,  Yasushi Takeuchi ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Yasushi Takeuchi ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/00 ,  B05B1/14

CPC分类号： C23C16/45551 ,  B05B1/20 ,  B05B1/267 ,  B05B13/0242 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/4584

摘要： An injector body of a gas injector has a gas inlet and a gas passage; plural gas outflow openings disposed on a wall part of the injector body along a longitudinal direction of the injector body; and a guide member that provides a slit-shaped gas discharge opening extending in the longitudinal direction of the injector body on an outer surface of the injector body, and guides gas flowing from the gas outflow openings to the gas discharge opening.

摘要翻译： 气体喷射器的喷射器主体具有气体入口和气体通道; 多个气体流出开口，沿着喷射器主体的长度方向设置在喷射器主体的壁部上; 以及引导构件，其在所述喷射器主体的外表面上提供沿所述喷射器主体的纵向方向延伸的狭缝状气体排出口，并且引导从所述气体流出口流到所述气体排出口的气体。

公开(公告)号：US08721790B2

公开(公告)日：2014-05-13

申请号：US12963673

申请日：2010-12-09

申请人： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

IPC分类号： C23C16/453 ,  C23C16/455 ,  C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

摘要翻译： 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。

公开(公告)号：US20100260935A1

公开(公告)日：2010-10-14

申请号：US12753932

申请日：2010-04-05

申请人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/52 ,  C23C16/00 ,  C23C16/46

CPC分类号： H01L21/67115 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/46 ,  C23C16/463 ,  C23C16/482 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771

摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.

摘要翻译： 放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与 产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

公开(公告)号：US08992685B2

公开(公告)日：2015-03-31

申请号：US12753978

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi ,  Yu Wamura ,  Jun Ogawa

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi ,  Yu Wamura ,  Jun Ogawa

IPC分类号： C23C16/00 ,  H01L21/67 ,  H01L21/687 ,  C23C16/54 ,  C23C16/52

CPC分类号： H01L21/67207 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.

摘要翻译： 在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元 房间。 控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出 来自真空室的基板，并且输出使基板旋转单元改变基板的方向的控制信号。

公开(公告)号：US08882915B2

公开(公告)日：2014-11-11

申请号：US12753932

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  C23C16/48 ,  C23C16/40 ,  C23C16/54 ,  H01L21/687

CPC分类号： H01L21/67115 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/46 ,  C23C16/463 ,  C23C16/482 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771

摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.

摘要翻译： 放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与 产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

公开(公告)号：US20110139074A1

公开(公告)日：2011-06-16

申请号：US12963673

申请日：2010-12-09

申请人： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

IPC分类号： C23C16/458 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

摘要翻译： 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。

公开(公告)号：US20100229797A1

公开(公告)日：2010-09-16

申请号：US12713317

申请日：2010-02-26

申请人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/00

CPC分类号： H01L21/68764 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45589 ,  H01L21/68771

摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.

摘要翻译： 公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于 基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

公开(公告)号：US20100227059A1

公开(公告)日：2010-09-09

申请号：US12713225

申请日：2010-02-26

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/458 ,  C23C16/00 ,  C23C16/52

CPC分类号： C23C16/45551

摘要： A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner.

摘要翻译： 通过允许放置在基座上的晶片交替地移动通过从相应的多个反应气体供应部分供应相应的多个反应气体的多个处理区域和分离气体供应的分离区域，将薄膜沉积到晶片上的预定厚度 从分离气体供给部分分离多个反应气体。 通过使基座相对于多个反应气体供给部和分离气体供给部旋转，或者使多个反应气体供给部和分离气体供给部相对于基座旋转而实现。 然后，当以上述方式将膜沉积到预定厚度时，膜沉积暂时停止; 晶片绕其中心旋转; 并且以相同的方式将膜沉积到另一预定厚度。