公开(公告)号：US09093490B2

公开(公告)日：2015-07-28

申请号：US12713317

申请日：2010-02-26

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/455 ,  C23C16/40 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68764 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45589 ,  H01L21/68771

摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.

摘要翻译： 公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于 基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

公开(公告)号：US20100260936A1

公开(公告)日：2010-10-14

申请号：US12753978

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/52 ,  C23C16/00 ,  C23C16/44

CPC分类号： H01L21/67207 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.

摘要翻译： 在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元 房间。 控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出 来自真空室的基板，并输出使基板旋转单元改变基板的方向的控制信号。

公开(公告)号：US08992685B2

公开(公告)日：2015-03-31

申请号：US12753978

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi ,  Yu Wamura ,  Jun Ogawa

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi ,  Yu Wamura ,  Jun Ogawa

IPC分类号： C23C16/00 ,  H01L21/67 ,  H01L21/687 ,  C23C16/54 ,  C23C16/52

CPC分类号： H01L21/67207 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.

摘要翻译： 在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元 房间。 控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出 来自真空室的基板，并且输出使基板旋转单元改变基板的方向的控制信号。

公开(公告)号：US08882915B2

公开(公告)日：2014-11-11

申请号：US12753932

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  C23C16/48 ,  C23C16/40 ,  C23C16/54 ,  H01L21/687

CPC分类号： H01L21/67115 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/46 ,  C23C16/463 ,  C23C16/482 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771

摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.

摘要翻译： 放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与 产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

公开(公告)号：US20100227059A1

公开(公告)日：2010-09-09

申请号：US12713225

申请日：2010-02-26

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/458 ,  C23C16/00 ,  C23C16/52

CPC分类号： C23C16/45551

摘要： A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner.

摘要翻译： 通过允许放置在基座上的晶片交替地移动通过从相应的多个反应气体供应部分供应相应的多个反应气体的多个处理区域和分离气体供应的分离区域，将薄膜沉积到晶片上的预定厚度 从分离气体供给部分分离多个反应气体。 通过使基座相对于多个反应气体供给部和分离气体供给部旋转，或者使多个反应气体供给部和分离气体供给部相对于基座旋转而实现。 然后，当以上述方式将膜沉积到预定厚度时，膜沉积暂时停止; 晶片绕其中心旋转; 并且以相同的方式将膜沉积到另一预定厚度。

公开(公告)号：US08721790B2

公开(公告)日：2014-05-13

申请号：US12963673

申请日：2010-12-09

申请人： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

IPC分类号： C23C16/453 ,  C23C16/455 ,  C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

摘要翻译： 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。

公开(公告)号：US09297072B2

公开(公告)日：2016-03-29

申请号：US12620750

申请日：2009-11-18

申请人： Hitoshi Kato ,  Manabu Honma

发明人： Hitoshi Kato ,  Manabu Honma

IPC分类号： C23C16/455 ,  H01L21/677 ,  H01L21/67 ,  C23C16/40

CPC分类号： C23C16/4551 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  H01L21/6719 ,  H01L21/67703

摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.

摘要翻译： 一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴 并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口， 将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及 排气单元构造成排出真空容器内的气氛。

公开(公告)号：US09103030B2

公开(公告)日：2015-08-11

申请号：US12627144

申请日：2009-11-30

申请人： Hitoshi Kato ,  Manabu Honma

发明人： Hitoshi Kato ,  Manabu Honma

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40

CPC分类号： C23C16/45551 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45578

摘要： In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.

摘要翻译： 在成膜装置中，第一分离气体从分离气体供给部排出到供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域。 提供加热器以通过辐射热来加热转台。 外侧壁构件设置在真空室的底部，以在设置加热器的区域中围绕转台。 空间形成构件设置在转台的旋转方向上彼此相邻的分隔区域之间并且从外侧壁构件延伸以在转台之间形成狭窄的空间。 吹扫气体从转台的下侧流过转台的外侧，通过狭窄的空间沿径向流动。

公开(公告)号：US08808456B2

公开(公告)日：2014-08-19

申请号：US12539642

申请日：2009-08-12

申请人： Hitoshi Kato ,  Manabu Honma

发明人： Hitoshi Kato ,  Manabu Honma

IPC分类号： C23C16/455 ,  H01L21/677 ,  C23C16/40 ,  H01L21/67

CPC分类号： C23C16/401 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45551 ,  H01L21/67161 ,  H01L21/67703

摘要： A disclosed film deposition apparatus has a separation gas supplying nozzle between reaction gas nozzles arranged away from each other in a rotation direction of a turntable on which a substrate is placed, and a ceiling member providing a lower ceiling surface on both sides of the separation gas supplying nozzle. In this film deposition apparatus, the separation gas supplying nozzle and the reaction gas nozzles are removably arranged along a circumferential direction of a chamber, and the ceiling member is removably attached on a ceiling plate of the chamber.

摘要翻译： 所公开的薄膜沉积装置具有在其上放置基板的转台的旋转方向上彼此远离配置的反应气体喷嘴之间的分离气体供给喷嘴，以及在分离气体的两侧设置有下部顶面的顶板部件 供应喷嘴。 在该成膜装置中，分离气体供给喷嘴和反应气体喷嘴沿着室的圆周方向可拆卸地配置，顶棚部件可移除地安装在室的顶板上。

公开(公告)号：US08673079B2

公开(公告)日：2014-03-18

申请号：US12550453

申请日：2009-08-31

申请人： Hitoshi Kato ,  Manabu Honma ,  Tomoki Haneishi

发明人： Hitoshi Kato ,  Manabu Honma ,  Tomoki Haneishi

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/401 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/4583

摘要： A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.

摘要翻译： 成膜装置包括：转台; 第一反应气体供给部和第二反应气体供给部，其从周缘朝向转台的旋转中心延伸; 以及设置在第一和第二反应气体供给部之间的第一分离气体供给部。 第一空间包含第一反应气体供应部分并且具有第一高度。 第二空间包含第二反应气体供应部分并且具有第二高度。 第三空间包含第一分离气体供应部分，并且具有低于第一和第二高度的高度。 设置在转台的旋转中心下方的电动机使转台旋转。 转盘的旋转轴和电动机的驱动轴联接而不产生滑移。