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65 条记录 (耗时 0.024 秒)

    Non-Volatile Memory Cell with Lateral Pinning
    1.
    发明申请
    Non-Volatile Memory Cell with Lateral Pinning 失效
    具有侧向固定的非易失性记忆单元

    公开(公告)号：US20120153413A1

    公开(公告)日：2012-06-21

    申请号：US12973536

    申请日：2010-12-20

    申请人： Haiwen Xi ,  Antoine Khoueir ,  Brian Lee ,  Patrick J. Ryan

    发明人： Haiwen Xi ,  Antoine Khoueir ,  Brian Lee ,  Patrick J. Ryan

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01F41/303 ,  H01L43/12

    摘要： An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.

    摘要翻译： 用于非易失性存储器单元（例如STRAM单元）的装置和相关方法。 根据各种实施例，无磁性层通过非磁性间隔层与反铁磁层（AFM）横向分离，并通过磁性隧道结从中间分离的合成反铁磁层（SAF）。 AFM通过与SAF的钉扎区域的接触来引导SAF的磁化，该区域横向延伸超过磁性隧道结。

    Non-volatile memory cell with lateral pinning
    2.
    发明授权
    Non-volatile memory cell with lateral pinning 失效
    具有侧向锁定的非易失性存储单元

    公开(公告)号：US08541247B2

    公开(公告)日：2013-09-24

    申请号：US12973536

    申请日：2010-12-20

    申请人： Haiwen Xi ,  Antoine Khoueir ,  Brian Lee ,  Patrick J. Ryan

    发明人： Haiwen Xi ,  Antoine Khoueir ,  Brian Lee ,  Patrick J. Ryan

    IPC分类号： H01L27/115

    CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01F41/303 ,  H01L43/12

    摘要： An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.

    摘要翻译： 用于非易失性存储器单元（例如STRAM单元）的装置和相关方法。 根据各种实施例，无磁性层通过非磁性间隔层与反铁磁层（AFM）横向分离，并通过磁性隧道结从中间分离的合成反铁磁层（SAF）。 AFM通过与SAF的钉扎区域的接触来引导SAF的磁化，该区域横向延伸超过磁性隧道结。

    High frequency field assisted write device
    4.
    发明申请
    High frequency field assisted write device 有权
    高频场辅助写装置

    公开(公告)号：US20080137224A1

    公开(公告)日：2008-06-12

    申请号：US11634767

    申请日：2006-12-06

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

    IPC分类号： G11B5/02

    CPC分类号： G11B5/1278 ,  G11B2005/001

    摘要： A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.

    摘要翻译： 磁性写入器包括写入元件和邻近写入元件设置的振荡器件。 第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。 设置在第一磁性层和第二磁性层之间的第一非磁性层。 当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

    High frequency field assisted write device
    5.
    发明授权
    High frequency field assisted write device 有权
    高频场辅助写装置

    公开(公告)号：US07724469B2

    公开(公告)日：2010-05-25

    申请号：US11634767

    申请日：2006-12-06

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

    IPC分类号： G11B5/127 ,  G11B5/187

    CPC分类号： G11B5/1278 ,  G11B2005/001

    摘要： A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.

    摘要翻译： 磁性写入器包括写入元件和邻近写入元件设置的振荡器件。 第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。 设置在第一磁性层和第二磁性层之间的第一非磁性层。 当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

    Non-Sequential Encoding Scheme for Multi-Level Cell (MLC) Memory Cells
    7.
    发明申请
    Non-Sequential Encoding Scheme for Multi-Level Cell (MLC) Memory Cells 有权
    用于多级单元（MLC）存储单元的非顺序编码方案

    公开(公告)号：US20120243311A1

    公开(公告)日：2012-09-27

    申请号：US13070021

    申请日：2011-03-23

    申请人： Yiran Chen ,  Dadi Setiadi ,  Patrick J. Ryan

    发明人： Yiran Chen ,  Dadi Setiadi ,  Patrick J. Ryan

    IPC分类号： G11C16/04 ,  G11C11/14

    CPC分类号： G11C11/161 ,  G11C7/1006 ,  G11C11/5607 ,  G11C11/5628 ,  G11C16/0483 ,  G11C2211/5648

    摘要： Apparatus and method for managing an array of multi-level cell (MLC) memory cells. In accordance with various embodiments, a non-sequential encoding scheme is selected that assigns a different multi-bit logical value to each of a plurality of available physical states of a selected MLC memory cell in relation to write effort associated with each of said plurality of physical states. Data are thereafter written to the selected MLC memory cell in relation to the selected non-sequential encoding scheme. In some embodiments, the MLC memory cell comprises a spin-torque transfer random access memory (STRAM) memory cell. In other embodiments, the MLC memory cell comprises an MLC flash memory cell.

    摘要翻译： 用于管理多层单元（MLC）存储单元阵列的装置和方法。 根据各种实施例，选择非顺序编码方案，其相对于与所述多个存储器单元中的每一个相关联的写入功率，将所选择的MLC存储器单元的多个可用物理状态中的每一个分配给不同的多位逻辑值 物理状态 相关于所选择的非顺序编码方案，数据被写入所选择的MLC存储器单元。 在一些实施例中，MLC存储器单元包括自旋转矩传递随机存取存储器（STRAM）存储器单元。 在其他实施例中，MLC存储器单元包括MLC闪存单元。

    Reticle sorter
    10.
    发明授权
    Reticle sorter 有权
    标线分选机

    公开(公告)号：US06878895B1

    公开(公告)日：2005-04-12

    申请号：US09383508

    申请日：1999-08-26

    申请人： Patrick J. Ryan ,  Michael R. Conboy ,  Stephen P. Hovestol

    发明人： Patrick J. Ryan ,  Michael R. Conboy ,  Stephen P. Hovestol

    IPC分类号： B07C5/344

    CPC分类号： B07C5/344 ,  Y10S209/939

    摘要： A reticle sorter and a semiconductor fabrication facility employing one or more reticle sorters is provided. The reticle sorter(s) generally lies between a reticle storage system and a group of one or more photolithography exposure tools (e.g., steppers) and is configured for sorting reticles in one or more cassettes. The use of the reticle sorter provides sorting functionality apart from the reticle storage system and typically closer to the group of photolithography steppers with which it is associated. This can, for example, significantly increase the throughput of semiconductor wafers through the associated photolithography exposure tools as well as in the semiconductor fabrication plant as a whole.

    摘要翻译： 提供了采用一个或多个掩模版分拣机的掩模版分拣机和半导体制造设备。 掩模版分选机通常位于掩模版存储系统和一组一个或多个光刻曝光工具（例如步进器）之间，并且被配置用于将一个或多个盒中的掩模版分类。 标线分类器的使用提供了除了掩模版存储系统之外的分类功能，并且通常更接近与其相关联的光刻步进组。 例如，这可以通过相关的光刻曝光工具以及整个半导体制造工厂显着提高半导体晶片的生产量。