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公开(公告)号：US4243866A
公开(公告)日：1981-01-06
申请号：US2499
申请日：1979-01-11
IPC分类号： H01J37/147 , H01J37/30 , B23K15/00 , G21K1/08
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/147 , H01J37/3007
摘要： In electron beam apparatus having a souce of electrons and a target area toward which the electrons are directed, electron beam forming means are provided along the path from the source to the target. These forming means include a first beam shaping member having a first spot shaping aperture therein, a second beam shaping member having a second spot shaping aperture therein, and means focusing the image of the first aperture in the plane of the second aperture to thereby form a composite spot shape defined by the image of the first aperture and the second aperture. Further means are provided for focusing the image of the composite spot in the target area.Preferably, the apertures are square shaped. Thus, by varying the position of the superimposed image of the first aperture with respect to the second aperture, a wide variety of rectangular shaped composite spots with different dimensions is obtainable. This permits the exposure of rectilinear patterns, e.g., in photoresists of integrated circuit fabrication, by the electron beam with a minimum of exposure steps and substantially no exposure overlap. The result is greatly increased speed in the total exposure of such rectilinear areas to the electron beam as well as a minimum of the "blooming effects" produced by exposure overlap.
摘要翻译： 在具有电子和电子指向的目标区域的电子束装置中，沿着从源极到靶的路径设置电子束形成装置。 这些形成装置包括其中具有第一光斑成形孔的第一光束整形元件，其中具有第二光点整形孔的第二光束整形元件，以及将第一光圈的图像聚焦在第二光阑的平面中，从而形成 由第一孔径和第二孔径的图像限定的复合斑点形状。 提供了用于将复合点的图像聚焦在目标区域中的另外的装置。 优选地，孔是正方形的。 因此，通过改变相对于第二孔的第一孔的叠加图像的位置，可获得具有不同尺寸的多种矩形复合斑点。 这允许通过电子束以最小的曝光步骤和基本上没有曝光重叠的方式曝光直线图案，例如在集成电路制造的光致抗蚀剂中。 结果是这种直线区域对电子束的总曝光速度大大提高，并且由曝光重叠产生的最小的“起霜效果”。
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2.发明授权Method and apparatus for controlling brightness and alignment of a beam of charged particles 失效用于控制带电粒子束的亮度和对准的方法和装置
公开(公告)号：US4000440A
公开(公告)日：1976-12-28
申请号：US492096
申请日：1974-07-26
IPC分类号： H01J37/305 , H01J37/147 , H01J37/304 , H01L21/027 , H01J29/52 , H01J29/54
CPC分类号： H01J37/304 , H01J37/1471
摘要： A beam of charged particles has its alignment and brightness alternately controlled in accordance with the current of the beam. The measurements of the current and any corrections for alignment or brightness are made when the beam is not applied to a target.
摘要翻译： 带电粒子束的对准和亮度根据光束的电流交替地控制。 当光束未施加到目标时，进行电流的测量和对准或亮度的任何校正。
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公开(公告)号：US06710361B2
公开(公告)日：2004-03-23
申请号：US10131709
申请日：2002-04-23
IPC分类号： G21K510
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/147 , H01J37/3177
摘要： A multi-beam e-beam system employs a set of independently controllable (for blanking and deflection) subsystems placed in a solenoid field, each system having a demagnifying lens comprising at least one passive pole piece, so that the final image demagnifies imperfections in the upstream electron beam. Upper and lower sections of the system employ the focusing effect of the solenoid field to form an image at a shaping aperture and a demagnified image of the beam at the shaping aperture on the workpiece. Small focus corrections due to magnetic lens field non-uniformity and/or target height variations, are accomplished with an electrostatic unipotental lens built into the pole pieces and target voltage variations.
摘要翻译： 多光束电子束系统采用放置在螺线管磁场中的一组可独立控制的（用于消隐和偏转）的子系统，每个系统具有包括至少一个无源极片的减光透镜，从而使最终图像缩小在 上游电子束。 该系统的上部和下部采用螺线管磁场的聚焦效应，以在成形孔处形成图像，并在工件上的成形孔处形成光束的缩小图像。 由于磁透镜场不均匀性和/或目标高度变化引起的小焦点校正是通过内置在极片中的静电单极透镜和目标电压变化来实现的。
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公开(公告)号：US4415851A
公开(公告)日：1983-11-15
申请号：US267118
申请日：1981-05-26
IPC分类号： H01J31/08 , G01R31/02 , G01R31/302 , G01R31/305 , H01J37/28 , H01L21/66 , H05K3/00
CPC分类号： G01R31/305
摘要： A system of testing the continuity of electrical conductors extending through an insulating layer without contact. A flood gun irradiates one side of the body to charge the exposed conductors to a given potential. A steerable electron beam scans the front side to generate secondary electron emission from those conductors. The secondary emission is enhanced from conductors with conductivity between front side and back side as a result of the surface potential established by the rear flood beam. The secondary emission varies depending on the state of continuity in the three dimensional network of conductors and produces signals at the detector which allow clear discrimination between uninterrupted and interrupted conductors. The system is applicable for unfired ceramics where contact destroys the specimen.
摘要翻译： 测试延伸穿过绝缘层而不接触的电导体的连续性的系统。 洪水枪照射身体的一侧，将暴露的导体充电到给定的电位。 可操纵的电子束扫描正面，从这些导体产生二次电子发射。 由于由后洪水束建立的表面电位，二次发射由前侧和后侧之间的导体导体增强。 二次发射根据导体三维网络中的连续性状态而变化，并在检测器处产生信号，允许清晰地区分不间断导体和中断导体。 该系统适用于接触破坏试样的未烧陶瓷。
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公开(公告)号：US4843330A
公开(公告)日：1989-06-27
申请号：US925764
申请日：1986-10-30
IPC分类号： H01L21/66 , G01N23/225 , G01Q30/02 , G01Q90/00 , G01R31/02 , G01R31/302 , G01R31/306 , H01L21/26 , H05K3/46
CPC分类号： G01R31/306
摘要： An electron beam system and method for testing three dimensional networks of conductors embedded in an insulating material specimen without physical contact to detect open and short circuit conditions. Top to top surface wiring is tested by irradiating the specimen with an electron beam at a first beam potential to charge the specimen while negatively biasing a grid placed above the specimen surface, and then irradiating selected portions of the specimen with an electron beam at a second beam potential to read the charge on selected conductors while applying a zero or a positive bias to the grid. In one embodiment the charge beam is a focused scanning beam and the first beam potential is preferably greater than the second beam potential.
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6.发明授权
公开(公告)号：US4417203A
公开(公告)日：1983-11-22
申请号：US267119
申请日：1981-05-26
IPC分类号： H01L21/66 , G01Q30/02 , G01R31/02 , G01R31/302 , G01R31/305 , H05K3/46
CPC分类号： B82Y15/00 , G01R31/305
摘要： An electron beam system for non contact testing of three dimensional networks of conductors embedded in dielectric material, specifically detection of open and short circuit conditions. Top to bottom and top to top surface wiring is tested electrically without making physical electrical contact. The system comprises two flood beams and a focus probe beam wih one flood beam located at either side of the specimen. Proper choice of acceleration potentials, beam currents and dwell times of the beams allow alteration of the secondary electron emission from the specimen in such a way that electrical properties of the conductor networks can be measured directly. The difference in secondary electron emission resulting from different surface potentials is detected as a strong signal which allows clear discrimination between uninterrupted and interrupted as well as shorted pairs of conductors. This testing system can be applied to the high speed testing of advanced VLSI packaging substrates as well as to the greensheets, sublaminates, and laminates from which they are fabricated.
摘要翻译： 用于非接触测试的电子束系统，用于嵌入介质材料的导体的三维网络，特别是开路和短路条件的检测。 从顶部到底部以及顶部到顶部的表面布线都进行电气测试，而不会进行物理电气接触。 该系统包括两个横梁和一个焦点探针光束，一个位于样品两侧的一个放射束。 正确选择加速电位，光束电流和停留时间可以改变样品的二次电子发射，从而可以直接测量导体网络的电气特性。 由不同表面电位产生的二次电子发射的差异被检测为强信号，其允许清晰地区分不间断的和中断的以及短路导体对。 该测试系统可以应用于高级VLSI封装基板的高速测试以及制造它们的绿色薄片，亚层压板和层压板。
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公开(公告)号：US4376249A
公开(公告)日：1983-03-08
申请号：US204427
申请日：1980-11-06
IPC分类号： H01J37/141 , H01J37/147 , H01J37/153 , H01J37/30 , H01J3/20
CPC分类号： H01J37/3007 , H01J37/1474
摘要： An electron beam projection system having a projection lens arranged so that upon pre-deflection of the electron beam the electron optical axis of the lens shifts to be coincident with the deflected beam. The projection system includes means for producing an electron beam, means for deflecting the beam, a magnetic projection lens having rotational symmetry for focusing the deflected beam and a pair of magnetic compensation yokes positioned within the bore of the projection lens means. The pair of correction yokes has coil dimensions such that, in combination, they produce a magnetic compensation field proportional to the first derivative of the axial magnetic field strength distribution curve of the projection lens. Upon application of current to the pair of compensation yokes the electron optical axis of the projection lens shifts to the position of the deflected beam so that the electron beam remains coincident with the shifted electron optical axis and lands perpendicular to a target.
摘要翻译： 一种具有投影透镜的电子束投影系统，其布置成使得在电子束的预偏转时，透镜的电子光轴移动以与偏转光束重合。 投影系统包括用于产生电子束的装置，用于偏转光束的装置，具有用于聚焦偏转光束的旋转对称性的磁性投影透镜和位于投影透镜装置的孔内的一对磁性补偿轭。 一对校正轭具有线圈尺寸，使得它们组合地产生与投影透镜的轴向磁场强度分布曲线的一阶导数成比例的磁补偿场。 在将电流施加到一对补偿轭时，投影透镜的电子光轴移动到偏转光束的位置，使得电子束与移动的电子光轴保持一致并垂直于目标。
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8.发明授权公开(公告)号：US06180947B2
公开(公告)日：2001-01-30
申请号：US09131113
申请日：1998-08-07
IPC分类号： H01J3714
CPC分类号： H01J37/153 , H01J37/304 , H01J2237/3045 , H01J2237/3175
摘要： A method of optimizing locations of correction elements of a charged particle beam system determines respective corrector element currents to achieve optimum correction as a function of individual corrector location. Substantially complete dynamic correction of FSD and SFD can be obtained consistent with efficiency of operation and minimization of deflection distortion. In particular, FSD and SFD corrections can be sufficiently separated for substantially complete correction of SFD and FSD simultaneously with two stigmators. Both of these types of correction can be provided in complex charged particle beam systems employing curvilinear axis (CVA) particle trajectories and or large area reduction projection optics (LARPO) which cause complex hybrid aberrations in order to achieve high throughput consistent with extremely high resolution supporting one-tenth micron minimum feature size lithography regimes and smaller.
摘要翻译： 优化带电粒子束系统的校正元件的位置的方法确定各个校正元件电流，以实现作为单独校正器位置的函数的最佳校正。 可以根据操作效率和偏转失真最小化，实现FSD和SFD的基本完整的动态校正。 特别地，FSD和SFD校正可以被充分地分离，以便与两个施放器同时进行SFD和FSD的基本上完全的校正。 这些类型的校正可以在使用曲线轴（CVA）粒子轨迹和或大面积减小投影光学（LARPO）的复杂带电粒子束系统中提供，其导致复杂的混合像差，以实现与极高分辨率支持一致的高通量 十分之一微米的最小特征尺寸光刻方案和更小。
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公开(公告)号：US4859856A
公开(公告)日：1989-08-22
申请号：US142035
申请日：1988-01-11
IPC分类号： H01J37/04 , H01J37/141 , H01J37/147 , H01J37/305 , H01L21/027
CPC分类号： H01J37/141 , H01J37/1474
摘要： A two staqge, electron beam projection system includes a target, a source of an electron beam and means for projecting an electron beam towards the target with its upper surface defining a target plane. A magnetic projection lens has a principal plane and a back focal plane located between said means for projecting and the target. The means for projecting provides an electron beam directed towards the target. First stage means provides deflection of the beam from area to area within a field. Second stage means provides for deflection of the beam for providing deflection of the beam within an area within a field. The beam crossing the back focal plane produces a telecentric condition of the beam in the image plane with the beam substantially normal to the target plane from the principal plane to the target plane. The magnetic projection lens includes a magnetic structure providing for magnetic compensation positioned within the bore of the projection lens, which produces a compensating magnetic field substantially proportional to the first derivative of the axial magnetic projection field. The axial magnetic projection field provides substantially a zero first derivative of the axial magnetic projection field in the vicinity of the target. The projection system projects on the target plane from the projection system as deflected by the upper and lower stages, at all times maintaining the telecentric condition of the electron beam at the target plane throughout the entire range of deflection of the beam, assuring minimum errors due to target height variations.
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10.发明授权Electron beam writing method and system using large range deflection in combination with a continuously moving table 失效电子束写入方法和系统使用大范围偏转与连续移动的表组合
公开(公告)号：US4818885A
公开(公告)日：1989-04-04
申请号：US68602
申请日：1987-06-30
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , H01L21/027 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3174 , H01J2237/1035 , H01J2237/30438 , H01J2237/31764 , H01J2237/31766 , H01J2237/31776
摘要： This system employs writing of lithographic patterns with a shaped electron beam exposure system which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field confined to local areas on the workpiece, which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field is possible because the quality requirements demanded from the shaped electron beam are less for detecting the locations of such registration marks at the various locations on the wafer.
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