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1.发明授权Method and apparatus for controlling brightness and alignment of a beam of charged particles 失效用于控制带电粒子束的亮度和对准的方法和装置
公开(公告)号：US4000440A
公开(公告)日：1976-12-28
申请号：US492096
申请日：1974-07-26
IPC分类号： H01J37/305 , H01J37/147 , H01J37/304 , H01L21/027 , H01J29/52 , H01J29/54
CPC分类号： H01J37/304 , H01J37/1471
摘要： A beam of charged particles has its alignment and brightness alternately controlled in accordance with the current of the beam. The measurements of the current and any corrections for alignment or brightness are made when the beam is not applied to a target.
摘要翻译： 带电粒子束的对准和亮度根据光束的电流交替地控制。 当光束未施加到目标时，进行电流的测量和对准或亮度的任何校正。
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2.发明授权Automatic overlay measurements using an electronic beam system as a measurement tool 失效使用电子束系统作为测量工具的自动覆盖测量
公开(公告)号：US4149085A
公开(公告)日：1979-04-10
申请号：US869972
申请日：1978-01-16
IPC分类号： G01B15/00 , H01J37/304 , H01L21/027 , H01L21/302 , H01J37/00
CPC分类号： H01J37/3045
摘要： A method and apparatus is described for performing automatic overlay measurements on wafers utilized in semiconductor manufacturing. The overlay measurements are made at selected sites on a given wafer where a single bar pattern has been overlaid over a double bar pattern. The position of the single bar center line with respect to the center line between the double bars is a direct indication of the overlay error of the two patterns. The overlay error is measured in both the X and Y dimensions and is utilized to monitor the overlay error or to produce statistics and correlations to system parameters so that the sources of overlay errors may be identified and the errors eliminated or minimized on subsequent wafers being processed.
摘要翻译： 描述了一种在半导体制造中使用的晶片上进行自动重叠测量的方法和装置。 覆盖测量在给定晶片上的选定位置处进行，其中单个条形图案已经覆盖在双重条形图案上。 单条中心线相对于双杆之间的中心线的位置是两种图案的重叠误差的直接指示。 覆盖误差在X和Y维度上都被测量，并用于监测覆盖误差或产生与系统参数的统计学和相关性，从而可以识别覆盖误差的来源，并且在随后的晶片处理中消除或最小化误差 。
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公开(公告)号：US4243866A
公开(公告)日：1981-01-06
申请号：US2499
申请日：1979-01-11
IPC分类号： H01J37/147 , H01J37/30 , B23K15/00 , G21K1/08
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/147 , H01J37/3007
摘要： In electron beam apparatus having a souce of electrons and a target area toward which the electrons are directed, electron beam forming means are provided along the path from the source to the target. These forming means include a first beam shaping member having a first spot shaping aperture therein, a second beam shaping member having a second spot shaping aperture therein, and means focusing the image of the first aperture in the plane of the second aperture to thereby form a composite spot shape defined by the image of the first aperture and the second aperture. Further means are provided for focusing the image of the composite spot in the target area.Preferably, the apertures are square shaped. Thus, by varying the position of the superimposed image of the first aperture with respect to the second aperture, a wide variety of rectangular shaped composite spots with different dimensions is obtainable. This permits the exposure of rectilinear patterns, e.g., in photoresists of integrated circuit fabrication, by the electron beam with a minimum of exposure steps and substantially no exposure overlap. The result is greatly increased speed in the total exposure of such rectilinear areas to the electron beam as well as a minimum of the "blooming effects" produced by exposure overlap.
摘要翻译： 在具有电子和电子指向的目标区域的电子束装置中，沿着从源极到靶的路径设置电子束形成装置。 这些形成装置包括其中具有第一光斑成形孔的第一光束整形元件，其中具有第二光点整形孔的第二光束整形元件，以及将第一光圈的图像聚焦在第二光阑的平面中，从而形成 由第一孔径和第二孔径的图像限定的复合斑点形状。 提供了用于将复合点的图像聚焦在目标区域中的另外的装置。 优选地，孔是正方形的。 因此，通过改变相对于第二孔的第一孔的叠加图像的位置，可获得具有不同尺寸的多种矩形复合斑点。 这允许通过电子束以最小的曝光步骤和基本上没有曝光重叠的方式曝光直线图案，例如在集成电路制造的光致抗蚀剂中。 结果是这种直线区域对电子束的总曝光速度大大提高，并且由曝光重叠产生的最小的“起霜效果”。
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公开(公告)号：US4365163A
公开(公告)日：1982-12-21
申请号：US218323
申请日：1980-12-19
IPC分类号： G03F1/86 , H01J37/304 , H01J37/00
CPC分类号： G03F1/86 , H01J37/3045
摘要： This describes an automatic defect inspection system as could be applied to metallized masks or other patterns. The system causes each subfield to be individually aligned for inspection irrespective of the previous alignment of the pattern or any other sub-field. This is accomplished by scanning a preselected portion of each sub-field and adjusting the position of the scan based on the resulting signal while scanning a pre-established portion of the sub-field. In this way a portion of each sub-field is used as an alignment mark and stepping errors avoided.Once alignment is achieved a probe, comparable to the size of the minimum defect to be detected is scanned over the sub-field with an overlapping pattern to find defects such as excessive metal, metal in improper places or points where the metal is missing.
摘要翻译： 这描述了可应用于金属化掩模或其它图案的自动缺陷检查系统。 无论模式或任何其他子场的先前对齐如何，系统都会使每个子区域单独对齐。 这是通过扫描每个子场的预选部分并且在扫描子场的预先建立的部分的同时基于所得到的信号来调整扫描的位置来实现的。 以这种方式，每个子场的一部分被用作对准标记并避免了步进错误。 一旦实现了对准，就可以通过重叠图案在子场上扫描与待检测的最小缺陷尺寸相当的探针，以发现缺陷，例如过多的金属，金属在不适当的位置或金属缺失点。
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公开(公告)号：US5301124A
公开(公告)日：1994-04-05
申请号：US118984
申请日：1993-09-09
申请人： Ken T. Chan , Donald E. Davis , William A. Enichen , Cecil T. Ho , Edward V. Weber , Guenther Langner
发明人： Ken T. Chan , Donald E. Davis , William A. Enichen , Cecil T. Ho , Edward V. Weber , Guenther Langner
IPC分类号： G03F7/20 , H01J37/304 , H01L21/027 , G06F15/00 , A61N5/00 , G01J1/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/70475 , H01J37/3045 , H01J2237/30438 , H01J2237/31776
摘要： A pattern is aligned and exposed with a lithography system so that chips larger than the deflection field can be formed by exposing M.times.N fields in a mosaic pattern. The method corrects the deflection field to compensate for the orientation of a previous pattern on a substrate and compensates for errors due to height caused by the beam landing non perpendicular to the target. Two basic procedures disclosed are called "3-mark" which are only applicable to 2.times.2 arrays of fields, and "M.times.N" which covers the general situation, but with slightly less accuracy.
摘要翻译： 图案用光刻系统对准和曝光，使得可以通过以马赛克图案曝光M * N场来形成大于偏转场的碎片。 该方法校正偏转场以补偿衬底上先前图案的取向，并且补偿由垂直于靶的光束着陆造成的高度的误差。 公开的两个基本程序被称为“3-mark”，仅适用于2 * 2场的阵列，“M * N”涵盖了一般情况，但精度稍差。
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6.发明授权Dynamic compensation of non-linear electron beam landing angle in variable axis lenses 失效可变轴透镜中非线性电子束着陆角的动态补偿
公开(公告)号：US5285074A
公开(公告)日：1994-02-08
申请号：US893172
申请日：1992-06-03
IPC分类号： G09G1/00 , G09G1/04 , H01J29/70 , H01J37/147 , H01J37/304 , H01L21/027 , H01L21/30 , H04N3/16
CPC分类号： H01J37/304 , H01J2237/04928 , H01J2237/1507 , H01J2237/153 , H01J2237/30461 , H01J2237/3175
摘要： A dynamic correction arrangement for an electron beam projection/deflection system provides high order correction values for deflection in accordance with a correction equation. Particularly as applied to high accuracy telecentric deflection, the coefficients of terms of the correction equation may be determined by calibration for a small number of test points. Correction values may be stored in a look-up table or computed in real time by using a math co-processor in a processing pipeline. The correction provided corrects landing angle errors through the third order in telecentric projection/deflection systems such as systems utilizing variable axis immersion lenses.
摘要翻译： 电子束投影/偏转系统的动态校正装置根据校正方程为偏转提供高阶校正值。 特别是应用于高精度远心偏转时，校正方程的项的系数可以通过少量测试点的校准来确定。 校正值可以存储在查找表中或通过在处理流水线中使用数学协处理器实时计算。 该校正提供了在诸如利用可变轴浸没透镜的系统的远心投影/偏转系统中通过第三级校正着陆角误差。
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公开(公告)号：US4581537A
公开(公告)日：1986-04-08
申请号：US592986
申请日：1984-03-23
CPC分类号： G03F1/44 , G03F1/84 , H01J37/3005
摘要： A method of forming inspection patterns for inspecting a workpiece, e.g., for electron beam inspection of optical photomasks. The inspection patterns are formed from the workpiece patterns themselves by applying a first positive windage to the workpiece patterns, inverting the first positive windaged workpiece patterns and applying a second positive windage to the inverted first positive windaged workpiece patterns. The inspection patterns so produced will contain the requisite guard band and the requisite overlap of abutting patterns.
摘要翻译： 形成用于检查工件的检查图案的方法，例如用于光学光掩模的电子束检查。 通过对工件图案施加第一正向风挡，反转第一正卷绕工件图案并将第二正向风边施加到倒置的第一正卷绕工件图案上，从工件图案本身形成检查图案。 所产生的检查图样将包含所需的保护带和邻接图案的必要重叠。
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公开(公告)号：US4546260A
公开(公告)日：1985-10-08
申请号：US509515
申请日：1983-06-30
IPC分类号： H01L21/027 , H01J37/304 , H01L21/68 , H01L23/544 , H01J37/00
CPC分类号： H01J37/3045 , H01L23/544 , H01L2223/54453 , H01L2924/0002
摘要： An alignment system for registration of a scanning beam in a mask inspection tool. Minimum scan widths (W) in the registration process are attained thereby increasing registration sensitivity. This technique allows initial placement of the E-Beam to be outside the capture range so that the scan on one side is completely off the metal (on glass) and the scan on the other side is completely on the metal. Correction signals are obtained by comparing the backscattered electron signals from the two scans with the magnitude of the signal being indicative of the amount of correction required and the sign being indicative of the direction of correction.
摘要翻译： 一种用于在掩模检查工具中对准扫描光束的对准系统。 达到配准过程中的最小扫描宽度（W），从而提高了配准灵敏度。 该技术允许电子束的初始放置在捕获范围之外，使得一侧的扫描完全离开金属（在玻璃上），另一侧的扫描完全在金属上。 校正信号是通过比较来自两次扫描的反向散射电子信号与信号的大小指示所需的校正量以及符号表示校正方向来获得的。
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