Process fo the production of Si.sub.2 N.sub.4 using a silicon,
phosphorous and nitrogen containing precursor
    5.
    发明授权
    Process fo the production of Si.sub.2 N.sub.4 using a silicon, phosphorous and nitrogen containing precursor 失效
    使用硅,含磷和氮的前体生产SI3N4的过程。

    公开(公告)号:US5340561A

    公开(公告)日:1994-08-23

    申请号:US170097

    申请日:1993-12-20

    摘要: The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen-and phosphorus-containing compound.

    摘要翻译: 本发明涉及一种生产高含量的低针状氮化硅的方法,其中将无定形含氮硅烷化合物与包含元素硅,磷和氮的晶体或无定形化合物混合以形成混合物 其在高于1000℃的温度下进行热处理以形成低针状氮化硅。 本发明还涉及在生产低针氮化硅的方法中用作起始材料的含硅,氮和磷的化合物,以及生产硅氮 和含磷化合物。

    Production of Si.sub.2-x P.sub.x N.sub.2+x (NH).sub.1-x, where x=0.1 to
1.0
    10.
    发明授权
    Production of Si.sub.2-x P.sub.x N.sub.2+x (NH).sub.1-x, where x=0.1 to 1.0 失效
    Si2-xPxN2 + x(NH)1-x的制备,其中x = 0.1〜1.0

    公开(公告)号:US5296211A

    公开(公告)日:1994-03-22

    申请号:US1559

    申请日:1993-01-06

    摘要: The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen- and phosphorus-containing compound.

    摘要翻译: 本发明涉及一种生产高(α)含量的低针状氮化硅的方法,其中无定形含氮硅烷化合物与包含元素硅,磷和氮的晶体或无定形化合物混合形成 在高于1000℃的温度下热处理的混合物以形成低针状氮化硅。 本发明还涉及在生产低针氮化硅的方法中用作起始材料的含硅,氮和磷的化合物,以及生产硅氮 - 和含磷化合物。