公开(公告)号：US5779826A

公开(公告)日：1998-07-14

申请号：US939860

申请日：1997-09-29

申请人： Harbhajan S. Nayar ,  John J. Dwyer, Jr. ,  Edward Chang

发明人： Harbhajan S. Nayar ,  John J. Dwyer, Jr. ,  Edward Chang

IPC分类号： C21D1/76 ,  C21D1/74

CPC分类号： C21D1/763 ,  C21D1/76

摘要： The present invention is directed to a method for forming a heat treating atmosphere in which a nitrogen rich gas containing small amounts of oxygen is preheated. An oxygen-reactive gas, such as a hydrocarbon gas, is combined with the nitrogen rich gas and the mixture is reacted outside of the furnace at temperatures above which substantial sooting does not occur. The resulting heat treating atmosphere is then forwarded to the furnace for conducting the heat treating process.

摘要翻译： 本发明涉及一种用于形成其中含有少量氧气的富氮气体被预热的热处理气氛的方法。 将氧反应性气体（例如烃气体）与富氮​​气体组合，并且混合物在高于不发生实质性煤烟的温度下在炉外反应。 然后将所得热处理气体送至炉子进行热处理。

公开(公告)号：US20120326922A1

公开(公告)日：2012-12-27

申请号：US13169711

申请日：2011-06-27

申请人： Qingxuan YANG ,  Edward Chang ,  Guanfeng Ll

发明人： Qingxuan YANG ,  Edward Chang ,  Guanfeng Ll

IPC分类号： G01S19/47

CPC分类号： G01S19/34 ,  G01S19/49

摘要： The present application describes a computer-implemented method and system for obtaining position information for a moving mobile device with increased accuracy and reduced power consumption. The subject of the present application combines information from a GPS location sensor with information from MEMS devices such as an acceleration detector and a gyroscope using statistical analysis techniques such as a Kalman filter to estimate the location of the device with greater accuracy while using numerical methods such as the Newton-Raphson Method to minimize power consumption. Minimizing power consumption is possible because GPS signals sampled at a lower rate can conserve power, while GPS sampled at a lower rate and working together with MEMS devices can achieve the same level of location prediction accuracy as a GPS alone sampled at a higher rate.

摘要翻译： 本申请描述了一种计算机实现的方法和系统，用于以更高的精度和更低的功耗获得移动移动设备的位置信息。 本申请的主题使用诸如卡尔曼滤波器的统计分析技术将来自GPS定位传感器的信息与来自诸如加速度检测器和陀螺仪之类的MEMS装置的信息相结合，以使用数字方法来估计器件的位置， 作为最小化功耗的Newton-Raphson方法。 尽可能降低功耗是可能的，因为以较低速率采样的GPS信号可以节省功率，而以较低速率采样并与MEMS器件一起工作的GPS可以实现与以较高速率单独采样的GPS相同的位置预测精度水平。

公开(公告)号：US20050023552A1

公开(公告)日：2005-02-03

申请号：US10699839

申请日：2003-11-04

申请人： Edward Chang ,  Guangli Luo ,  Tsung Yang ,  Chung Chang

发明人： Edward Chang ,  Guangli Luo ,  Tsung Yang ,  Chung Chang

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02546 ,  H01L33/0066

摘要： This invention provides a process for growing Ge epitaixial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaixial layers by using metal organic chemical vapor deposition (MOCVD). The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaixial layer, such as Si0.1Ge0.9 in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si0.1Ge0.9 due to the large mismatch between this layer and Si substrate. Furthermore, a subsequent 0.8 μm Si0.05Ge0.95 layer, and/or optionally a further 0.8 μm Si0.02Ge0.98 layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaixial layers. Finally, a GaAs epitaixial layer is grown on said Ge film by using MOCVD.

摘要翻译： 本发明提供了一种通过使用超高真空化学气相沉积（UHVCVD）在Si衬底上生长Ge表面层的方法，随后通过使用金属有机化学气相沉积在所述Ge附着层的表面的Ge膜上生长GaAs层 （MOCVD）。 该方法包括以下步骤：首先，在标准清洁程序中预清洁硅晶片，用HF溶液浸渍并预烘烤以除去其天然氧化物层。 然后，通过在特定条件下使用超高真空化学气相沉积，在所述Si衬底上生长厚度为0.8μm的高Ge组成的表层，例如Si0.1Ge0.9。 因此，由于该层和Si衬底之间的大的失配，在Si0.1Ge0.9的界面附近和部分低处产生并位于许多位错。 此外，生长随后的0.8μm的Si0.05Ge0.95层和/或任选的另外的0.8μm的SiO 0.02 Ga 0.98层。 它们形成所述层的应变界面可以非常有效地弯曲和终止传播的向上错位。 因此，在所述附着层的表面上生长纯Ge的膜。 最后，通过使用MOCVD在所述Ge膜上生长GaAs外延层。

公开(公告)号：US06393427B1

公开(公告)日：2002-05-21

申请号：US09274814

申请日：1999-03-22

申请人： Quoc Vu ,  Wen-Syan Li ,  Edward Chang

发明人： Quoc Vu ,  Wen-Syan Li ,  Edward Chang

IPC分类号： G06F1730

CPC分类号： G06F17/30873 ,  Y10S707/99942 ,  Y10S707/99943 ,  Y10S707/99944 ,  Y10S707/99945

摘要： A method for constructing and maintaining a navigation tree based on external document classifiers is provided. In one embodiment, based on the returned category labels from the classifiers, a navigation tree is constructed by taking usability and user preferences into consideration. Control parameters and algorithms are provided for inserting into and deleting documents from the navigation tree, and for splitting and merging nodes of the navigation tree, are provided.

摘要翻译： 提供了一种基于外部文档分类器构建和维护导航树的方法。 在一个实施例中，基于来自分类器的返回的类别标签，通过考虑可用性和用户偏好来构建导航树。 提供控制参数和算法，用于从导航树中插入和删除文档，并提供导航树的分割和合并节点。

公开(公告)号：US20190328059A1

公开(公告)日：2019-10-31

申请号：US16201026

申请日：2018-11-27

申请人： Edward Chang

发明人： Edward Chang

IPC分类号： A41D13/08

摘要： A protective sleeve designed to prevent the passage of bodily fluids therethrough. The protective sleeve includes an elongated member having an interior and an exterior. The interior of the elongated member has a perimeter, wherein the perimeter defines a top side, a bottom side, and at least one side edge. The top side and the bottom side each have an elastic band disposed therein. The elongated member is designed to seal around an arm of a user and thereby prevent fluid penetration therethrough. In this way, a user is able to protect their arm from exposure to bodily fluids, such as blood.

公开(公告)号：US08379147B2

公开(公告)日：2013-02-19

申请号：US12794683

申请日：2010-06-04

申请人： Edward Chang ,  Herbert Huang

发明人： Edward Chang ,  Herbert Huang

IPC分类号： H04N11/20 ,  H04N5/21

CPC分类号： G06T3/4007

摘要： Video processing circuitry to adaptively process input video data which corresponds to a plurality of video frames of a selected channel which is one of a plurality of channels of a broadcast spectrum. In one aspect, the video processing circuitry includes spatial adaptation circuitry to generate and output spatially adapted video data corresponding to the plurality of video frames, temporal adaptation circuitry to generate and output temporally adapted video data corresponding to the plurality of video frames, and video manipulation circuitry, coupled to the spatial adaptation circuitry and the temporal adaptation circuitry, to generate output video data corresponding to the plurality of video frames, using the input video data, the spatially adapted video data and the temporally adapted video data. Methods of adaptively processing input video data which corresponds to a plurality of video frames of a selected channel which is one of a plurality of channels of a broadcast spectrum are also disclosed.

摘要翻译： 视频处理电路，用于自适应地处理对应于作为广播频谱的多个频道之一的所选频道的多个视频帧的输入视频数据。 在一个方面，视频处理电路包括空间自适应电路，用于产生和输出对应于多个视频帧的空间适应的视频数据，用于生成和输出对应于多个视频帧的时间适应的视频数据的时间自适应电路和视频操作 耦合到空间适应电路和时间自适应电路的电路，使用输入的视频数据，空间适应的视频数据和时间适应的视频数据来生成对应于多个视频帧的输出视频数据。 还公开了对与广播频谱的多个频道之一的所选频道的多个视频帧相对应的输入视频数据进行自适应处理的方法。

公开(公告)号：US07349448B2

公开(公告)日：2008-03-25

申请号：US10632885

申请日：2003-08-01

申请人： Edward Chang

发明人： Edward Chang

IPC分类号： H04J3/04

CPC分类号： H04J3/047

摘要： A multiplexor circuit comprising a plurality of data connections, first stage logic configured to receive a first data word from one of the connections and to transmit the first data word received, and second stage logic configured to receive the first data word from the first stage logic and to select a selected data word between the first data word and a second data word received from another of the plurality of data connections based upon a set of select signals, the second stage logic configured to transmit the selected data word.

摘要翻译： 一种多路复用器电路，包括多个数据连接，第一级逻辑被配置为从所述连接之一接收第一数据字并发送所接收的第一数据字;以及第二级逻辑，被配置为从所述第一级逻辑 并且基于一组选择信号来选择在所述第一数据字和从所述多个数据连接中的另一数据连接接收的第二数据字之间的所选择的数据字，所述第二级逻辑被配置为发送所选择的数据字。

公开(公告)号：US20050085084A1

公开(公告)日：2005-04-21

申请号：US10685600

申请日：2003-10-16

申请人： Edward Chang ,  Cheng-Shih Lee

发明人： Edward Chang ,  Cheng-Shih Lee

IPC分类号： H01L21/306 ,  H01L21/68 ,  H01L21/768 ,  H01L23/48 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/568 ,  H01L21/02063 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A bi-level structure based on copper metallization technique has been applied to backside of gallium arsenide (GaAs) devices. The foundation where the structure stands on is device substrate backside, on which a layer of diffusion barrier is deposited first, and to the top of it, a layer of copper metallization is plated to enhance device performance. The barrier layer can be selected from tungsten (W), tungsten nitride (WN), or titanium tungsten nitride (TiWN) by sputtering or evaporating, which effectively prevents copper from diffusing into GaAs substrate. The layer of copper metallization, formed by employing anyone of sputtering, evaporating, or electroplating, proves to offer attractive thermal and electrical conductivity and mechanical strength and the like. Moreover, these characteristic improvements coupled with a fascinating part, low cost, would benefit and motivate global GaAs fabs.

摘要翻译： 基于铜金属化技术的双层结构已被应用于砷化镓（GaAs）器件的背面。 结构所在的基础是器件衬底背面，其上首先沉积一层扩散阻挡层，并且在其顶部镀有一层铜金属化以增强器件性能。 阻挡层可以通过溅射或蒸发从钨（W），氮化钨（WN）或氮化钨（TiWN）中选择，这有效地防止铜扩散到GaAs衬底中。 通过使用任何溅射，蒸发或电镀形成的铜金属化层证明提供有吸引力的热导和导电性和机械强度等。 此外，这些特征改进加上迷人的部分，低成本，将有利于并激励全球砷化镓晶圆厂。

公开(公告)号：US5744734A

公开(公告)日：1998-04-28

申请号：US551110

申请日：1995-10-31

申请人： Chih-Chao Yang ,  Edward Chang

发明人： Chih-Chao Yang ,  Edward Chang

IPC分类号： B22F3/26 ,  B22F9/08 ,  C22C21/00

CPC分类号： B22F3/26 ,  Y10T428/12021

摘要： A method for fabricating articles of high-temperature aluminum alloys having a compressional strength of at least 20 kg/mm.sup.2 at temperatures of 300.degree. C. or greater, is disclosed. The method comprises the steps of: (a) forming a porous preform from particles of a first aluminum alloy via cold-pressing, the preform having the shape and dimension of the aluminum alloy article to be fabricated; (b) squeeze-casting a molten second aluminum alloy into void spaces of the porous preform to form an aluminum composite containing the first aluminum alloy, which serves as a reinforcement phase, dispersed in the second aluminum alloy, which serves as a matrix phase; (c) wherein the molten second aluminum alloy is cast at such temperatures so as to cause a surface of the first aluminum alloy particles to melt and thereby form a strong bonding with the second aluminum alloy. The first aluminum alloy particles are formed by melt-spinning, followed by rapid solidification and precipitation, of a composition of the first aluminum alloy to form a thin ribbon, then pulverizing the thin ribbon into particles. Unlike the prior art processes, which fabricate high-temperature aluminum alloys only in essentially two-dimensional articles, the method disclosed herein allows the capability of near net shaping, i.e., it can fabricate high-temperature aluminum alloy articles of essentially any intended shapes. The present process allows selective reinforcement of the fabricated articles to be achieved at strategically important locations, so as to expand the range of engineering applications of the fabricated articles without incurring substantially increased manufacturing cost.

摘要翻译： 公开了一种在300℃或更高的温度下制造具有至少20kg / mm 2的压缩强度的高温铝合金制品的方法。 该方法包括以下步骤：（a）通过冷压从第一铝合金的颗粒形成多孔预成型件，预制件具有要制造的铝合金制品的形状和尺寸; （b）将熔融的第二铝合金挤压成多孔预型体的空隙空间，形成含有分散在作为基体相的第二铝合金中作为增强相的第一铝合金的铝复合材料; （c）其中熔融的第二铝合金在这样的温度下铸造，使得第一铝合金颗粒的表面熔化，从而与第二铝合金形成牢固的结合。 首先通过熔融纺丝形成第一铝合金颗粒，随后快速凝固和沉淀出第一铝合金的组成，形成薄带，然后将薄带粉碎成颗粒。 与仅在基本上二维制品中制造高温铝合金的现有技术方法不同，本文公开的方法允许近净成形的能力，即它可以制造基本上任何预期形状的高温铝合金制品。 本方法允许选择性地加强要在战略重要位置实现的制造制品，从而扩大制造制品的工程应用范围，而不会导致显着增加的制造成本。

公开(公告)号：US5242535A

公开(公告)日：1993-09-07

申请号：US953442

申请日：1992-09-29

申请人： Satish S. Tamhaukar ,  Edward Chang ,  Richard Paciej ,  Mark J. Kirschner

发明人： Satish S. Tamhaukar ,  Edward Chang ,  Richard Paciej ,  Mark J. Kirschner

IPC分类号： H05K3/06 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  H05K1/03 ,  H05K3/10 ,  H05K3/18 ,  H05K3/24 ,  H05K3/38

CPC分类号： C04B41/009 ,  C04B41/5127 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  H05K3/108 ,  H05K3/38 ,  C04B2111/00844 ,  H05K1/0306 ,  H05K2203/1105 ,  H05K3/241 ,  H05K3/388

摘要： A method of forming a copper circuit pattern on a ceramic substrate. In accordance with the method, first and second layers of copper oxide and copper are applied to the ceramic substrate. Selected regions of the copper are then masked so that unmasked regions are formed on the copper in a configuration of the copper circuit pattern. Masked regions are formed on the copper adjacent the unmasked regions, where copper cannot be plated. The unmasked regions of the copper are plated in a neutral pH solution by a reverse pulse plating process. The masking is then removed and the copper and copper oxide layers are etched so that the copper and copper oxide is removed from the unmasked regions. Thereafter, the remaining copper is direct bonded to the substrate.

摘要翻译： 在陶瓷基板上形成铜电路图案的方法。 根据该方法，将第一和第二层氧化铜和铜施加到陶瓷基板上。 然后对铜的选定区域进行掩模，使得在铜电路图案的配置中在铜上形成未掩模区域。 掩蔽区域形成在邻近未掩模区域的铜上，其中不能镀铜。 通过反向脉冲电镀方法将铜的未掩蔽区域镀在中性pH溶液中。 然后去除掩模，并且蚀刻铜和铜氧化物层，使得铜和氧化铜从未掩模区域移除。 此后，剩余的铜直接键合到基板上。