摘要:
Organosilicon compounds of the formula ##STR1## wherein R.sup.1 and R.sup.2 are each independently straight or branched alkyl of 1 to 4 carbon atoms or --OR.sup.3,R.sup.3 is R.sup.4 --(OR.sup.5).sub.m --,R.sup.6 is straight or branched alkyl of 1 to 4 carbon atoms,m is an integer from 0 to 6, inclusive,R.sup.5 is straight or branched alkylene of 2 to 4 carbon atoms, which may be identical or different when m is an integer from 2 to 6, andR.sup.6 is straight or branched alkylene of 2 to 6 carbon atoms,are prepared by reacting hydrogensilanes of the formula ##STR2## wherein R.sup.7 are identical or different groups R.sup.4 or the group OR.sup.4, and R.sup.4 has the previously indicated meaning,with terminally unsaturated ethers of the formulaR.sup.4 --(OR.sup.5).sub.m --OR.sup.8whereinm, R.sup.4 and R.sup.5 have the previously indicated meanings, andR.sup.8 is terminally unsaturated straight or branched alkenyl or 2 to 6 carbon atoms,in the presence of a catalyst at controlled temperatures to form addition products of the formula ##STR3## wherein m and R.sup.4, R.sup.5, R.sup.6 and R.sup.7 have the previously indicated meanings, and the R.sup.4 's are identical or differentwhich are converted into the desired end products by thermal and/or catalytic transesterification with monofunctional hydroxy compounds of the formulaR.sup.4 --(OR.sup.5).sub.m OHwhereinm, R.sup.4 and R.sup.5 have the previously indicated meanings.
摘要:
The invention relates to a process for dismutating at least one halosilane and reducing the content of extraneous metal and/or a compound containing extraneous metal in the at least one halosilane and in the at least one silane obtained, by contacting at least one halosilane of the general formula I, HnSiClm (I), where n and m are integers and n=1, 2 or 3 and m=1, 2 or 3 and n+m=4, with a particulate, organic, amino-functional resin to obtain at least one silane of the general formula II, HaSiClb (II), where a and b are integers and a=0, 2, 3 or 4 and b=0, 1, 2 or 4 where a+b=4, in one step, in which the content of extraneous metal and/or compounds containing extraneous metal has been reduced compared to the halosilane of the formula I. The invention further provides for the use of this resin for dismutating halosilanes and as an absorbent of extraneous metals or compounds containing extraneous metal in a process for preparing monosilane.
摘要:
The invention relates to a method for indirectly determining the purity of silanes and germanes using a device for measuring specific resistance. The invention further relates to a system for industrially producing and/or filling containers with silanes or germanes, including a quality control in which a device is used for measuring specific resistance.
摘要:
The invention provides a method for the processing of finely divided solids during the production of chlorosilanes, which is characterized in that the finely divided solids are hydraulically pressed to give bodies of increased density. Moreover, also provided is the compact obtained by the process according to the invention which is characterized by a filling factor of the finely divided solids to be hydraulically pressed of 3.9 to 4.5.
摘要:
The invention relates to a process for preparing monomeric and/or dimeric halogen- and/or hydrogen-containing silicon compounds from oligomeric inorganic silanes having three or more directly covalently interconnected silicon atoms substituted by substituents selected from halogen, hydrogen and/or oxygen by reacting the oligomeric silane over a nitrogen-containing catalyst in the presence of hydrogen halide.
摘要:
The invention relates to an empty container (1) for accommodating high-purity and ultra-high-purity, air- and/or moisture-sensitive liquid or condensable compounds, comprising a cylindrical jacket (3), a bottom (4a) and an upper end piece (4b, 4b′) at the two ends of the cylindrical jacket, an associated connection unit (2) including shut-off/multiple-way and rinsing system (5), and an associated immersion pipe (7), characterized in that the lower end of the immersion pipe (7a) protrudes into a recess (4c) (depression), which is introduced in the bottom (4a) and which is the lowest point of the bottom, and/or the lower end of the immersion pipe (7a) is tapered and is brought close to the lowest point of the bottom (4a) to within less than 2 mm by means of the tip of the tapered immersion pipe (7b) or touches the lowest point of the bottom with the tip of the tapered immersion pipe (7b). The invention further relates to the use of empty containers according to the invention for storing, handling, and/or transporting such high-purity and ultra-high-purity compounds.
摘要:
The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.
摘要:
It has been found that conventional cheap waterglass qualities in a strongly acidic medium react to give high-purity silica grades, the treatment of which with a base leads to products which can be processed further to give glass bodies with low silanol group contents.
摘要:
A reactor, a plant, and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride by treating the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride from the resulting treated phase by fractional distillation. The treatment is carried out in a plasma reactor in which longitudinal axes of a dielectric, of a high-voltage electrode, and of a grounded, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.
摘要:
The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon.