公开(公告)号：US4783743A

公开(公告)日：1988-11-08

申请号：US808172

申请日：1985-12-12

申请人： Seiji Yashiki ,  Haruki Higashi ,  Kouichirou Waki ,  Toshiyuki Kikuchi

发明人： Seiji Yashiki ,  Haruki Higashi ,  Kouichirou Waki ,  Toshiyuki Kikuchi

IPC分类号： F16H47/08 ,  B60K20/00 ,  F16H59/38 ,  F16H59/42 ,  F16H59/68 ,  F16H61/00 ,  F16H61/04 ,  F16H61/14 ,  B60K41/08 ,  G06F15/20

CPC分类号： F16H59/68 ,  F16H2059/385 ,  F16H2059/425 ,  F16H2059/6807 ,  F16H59/42 ,  F16H61/0437 ,  F16H61/14 ,  Y10T477/6347

摘要： In an automatic transmission control system, completion of gear-shifting is detected on the basis of both the rate of change in rotational speed of the output shaft of the torque converter and the rotational speed at which the output shaft of the torque converter is expected to rotate. That is, a rotational speed range within which the rotational speed of the output shaft of the torque converter is expected to fall upon completion of the gear-shifting is determined taking into account the rotational speed of the output shaft of the torque converter upon initiation of the gear-shifting and the gear ratio, and it is determined that the gear-shifting is completed when the rotational speed of the output shaft of the torque converter falls within the predetermined rotational speed range and the rate of change in rotational speed of the output shaft of the torque converter is reduced below a predetermined value.

摘要翻译： 在自动变速器控制系统中，基于变矩器的输出轴的转速的变化率和变矩器的输出轴的转速两者都被检测到变速完成 旋转。 也就是说，考虑到变矩器的输出轴的转速在启动时确定变矩器的输出轴的转速在期望变速器结束时的转速的转速范围 换档和齿轮比，并且当变矩器的输出轴的转速落在预定的转速范围内并且输出的转速的变化率被确定为变速完成 变矩器的轴减小到预定值以下。

公开(公告)号：US4640394A

公开(公告)日：1987-02-03

申请号：US730036

申请日：1985-05-03

申请人： Haruki Higashi ,  Seiji Yashiki ,  Kouichirou Waki ,  Toshiyuki Kikuchi

发明人： Haruki Higashi ,  Seiji Yashiki ,  Kouichirou Waki ,  Toshiyuki Kikuchi

IPC分类号： F16H61/14 ,  F16H45/02 ,  B60K41/28

CPC分类号： F16H61/143 ,  Y10T477/63525

摘要： A lock-up control system for an automatic transmission including a torque converter coupled with an engine, a power transmitting gear arrangement controlled by a gear ratio control device in accordance with a shifting up or down signal, and a lock-up clutch provided for locking up the output shaft of the torque converter to the output shaft of the engine. The lock-up control system comprises lock-up operation control apparatus causing the lock-up clutch to be in its inoperative state when the gear ratio control device performs the control with the shifting up or down signal, and lock-up command device for preventing the lock-up operation control apparatus from causing the lock-up clutch to be in its inoperative state until a predetermined reductive variation in the speed of the output shaft of the torque converter arises after the shifting up signal is supplied to the gear ratio control device under the condition in which the lock-up clutch is in operation.

摘要翻译： 一种用于自动变速器的锁定控制系统，其包括与发动机耦合的变矩器，根据换档或减速信号由齿轮比控制装置控制的动力传递齿轮装置和锁定离合器 将变矩器的输出轴上升到发动机的输出轴。 锁定控制系统包括锁定操作控制装置，当齿轮比控制装置利用上移或下移信号进行控制时，使锁止离合器处于其不工作状态，以及防止锁定指令装置 锁止操作控制装置使得锁止离合器处于其不工作状态，直到在变速信号被提供给变速比控制装置之后才出现转矩变换器的输出轴的速度的预定的减小变化 在锁止离合器运行的条件下。

公开(公告)号：US06200115B1

公开(公告)日：2001-03-13

申请号：US09366196

申请日：1999-08-04

申请人： Toshiyuki Kikuchi

发明人： Toshiyuki Kikuchi

IPC分类号： F04C1804

CPC分类号： F01C17/063 ,  F01C17/06 ,  F16C2360/42

摘要： A ball coupling constituting a rotation preventing mechanism (77) includes a first annular race section (59, 79) having a thrust ball transfer surface formed on one surface thereof, a second annular race section (61, 81) having a ball transfer surface formed on one surface thereof confronting the one surface of the first race section and thrust balls (67) interposed between the first and second race sections (79, 81). At least one of the first and second race sections has a cross sectional shape such that the central portion of the other surface (87) thereof confronting the one surface is a recessed groove (89). A scroll type compressor includes the rotation preventing mechanism on the back surface of a movable scroll member.

摘要翻译： 构成旋转防止机构（77）的球形联轴器包括在其一个表面上形成有推力球转移面的第一环形圈部（59,79），形成有球转移面的第二环形圈部（61,81） 在其面对第一座圈部分的一个表面的一个表面上以及置于第一和第二座圈部分（79,81）之间的推力球（67）。 第一和第二座圈中的至少一个具有横截面形状，使得面对该一个表面的另一个表面（87）的中心部分是凹槽（89）。 涡旋式压缩机包括在可动涡旋件的后表面上的防旋转机构。

公开(公告)号：US5860791A

公开(公告)日：1999-01-19

申请号：US670062

申请日：1996-06-25

申请人： Toshiyuki Kikuchi

发明人： Toshiyuki Kikuchi

IPC分类号： F04C28/26 ,  F04B49/02 ,  F04C18/02 ,  F04C18/04 ,  F04C28/16

CPC分类号： F04C28/16

摘要： A variable displacement mechanism of fluid displacement apparatus includes a housing having a suction chamber and a discharge chamber, a first scroll member disposed within said housing and having an end plate from which a first spiral element axially extends, and a second scroll member disposed for non-rotatable orbital movement relative to the first scroll member and having an end plate from which a second spiral element axially extends. At least one control mechanism is disposed on the end plate of the first scroll member for controlling the fluid communication between the fluid pockets and the suction chamber based on the rotational motion of the driving mechanism.

摘要翻译： 流体置换装置的可变排量机构包括具有吸入室和排出室的壳体，第一涡旋构件，设置在所述壳体内并具有端板，第一螺旋元件从该端板轴向延伸;以及第二涡旋构件， 可旋转的轨道运动相对于第一涡旋构件并且具有端板，第二螺旋元件从该端板轴向延伸。 至少一个控制机构设置在第一涡旋件的端板上，用于基于驱动机构的旋转运动来控制流体袋和吸入室之间的流体连通。

公开(公告)号：US5793097A

公开(公告)日：1998-08-11

申请号：US519096

申请日：1995-08-24

申请人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

发明人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

IPC分类号： H01C7/06 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L29/00 ,  H01L23/48 ,  H01L29/76

CPC分类号： H01L27/0652 ,  H01L27/0688 ,  H01L28/20

摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

摘要翻译： 本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。 使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二 多晶层具有负电阻的温度依赖性，反之亦然。 此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。

公开(公告)号：US5067373A

公开(公告)日：1991-11-26

申请号：US461282

申请日：1990-01-05

申请人： Takahiro Kyohzuka ,  Toshiyuki Kikuchi

发明人： Takahiro Kyohzuka ,  Toshiyuki Kikuchi

IPC分类号： F16H61/10 ,  F16H59/24 ,  F16H59/72 ,  F16H61/00 ,  F16H61/02 ,  F16H61/04 ,  F16H61/16 ,  F16H61/18

CPC分类号： F16H61/0213 ,  F16H2061/0096 ,  F16H2061/0444 ,  F16H2061/0448 ,  F16H59/24 ,  F16H59/72 ,  Y10T477/653 ,  Y10T477/6934

摘要： An automatic-transmission control system causes the automatic transmission to shift once to an intermediate gear speed and then shift to the final gear speed when a jump shifting is required. The automatic transmission control system causes the automatic transmission to directly upshift to the final gear speed without once shifting to an intermediate gear speed when a jump upshift is required while the engine load is not heavier than a predetermined value or the vehicle speed is not lower than a predetermined value.

摘要翻译： 自动变速器控制系统使得自动变速器一旦移动到中间档位，然后在需要跳变换档时转换到最终档位。 自动变速器控制系统使得自动变速器在发动机负载不比预定值重或车速不低于当需要跳档换档时，直接升档到最终档位速度，而不会转换到中间档位速度 预定值。

公开(公告)号：US4687083A

公开(公告)日：1987-08-18

申请号：US592362

申请日：1984-03-22

申请人： Kaoru Sotoyama ,  Shizuo Sumida ,  Toshiyuki Kikuchi

发明人： Kaoru Sotoyama ,  Shizuo Sumida ,  Toshiyuki Kikuchi

IPC分类号： F16H61/14 ,  F16H45/02 ,  B60K41/02

CPC分类号： F16H61/143 ,  Y10T477/735 ,  Y10T477/75

摘要： A vehicle automatic transmission including a torque converter having a lock up clutch. A lock up control circuit is provided and has a memory including a first lock up control line for controlling the engagement and release of the lock up clutch when the torque converter turbine speed is close to the pump impeller speed, and a second lock up control line which is drawn along a line wherein the engine output torque is substantially zero so that the lock up clutch is released at a given engine load when the turbine speed is decreased beyond the first lock up control line, or when the turbine speed is increased beyond the second lock up control line.

摘要翻译： 一种车辆自动变速器，包括具有锁止离合器的变矩器。 提供一种锁定控制电路，并且具有存储器，该存储器包括第一锁定控制线，用于当变矩器涡轮转速接近泵叶轮速度时控制锁止离合器的接合和释放;以及第二锁定控制线 其沿着其中发动机输出扭矩基本上为零的线被绘制，使得当涡轮速度降低超过第一锁定控制线时，或者当涡轮机速度增加超过第一锁定控制线时，锁定离合器在给定的发动机负载下被释放 第二锁定控制线。

公开(公告)号：US07238582B2

公开(公告)日：2007-07-03

申请号：US11000092

申请日：2004-12-01

申请人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

发明人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

IPC分类号： H01L21/8222

CPC分类号： H01L27/0652 ,  H01L27/0688 ,  H01L28/20

摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

摘要翻译： 本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。 使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二 多晶硅层具有负电阻的温度依赖性，反之亦然。 此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。

公开(公告)号：US20050230716A1

公开(公告)日：2005-10-20

申请号：US11107888

申请日：2005-04-18

申请人： Satoshi Moriya ,  Toshiyuki Kikuchi ,  Akihiko Konno ,  Hidenori Sato ,  Naoki Yamamoto ,  Masamichi Matsuoka ,  Hiraku Chakihara ,  Akio Nishida

发明人： Satoshi Moriya ,  Toshiyuki Kikuchi ,  Akihiko Konno ,  Hidenori Sato ,  Naoki Yamamoto ,  Masamichi Matsuoka ,  Hiraku Chakihara ,  Akio Nishida

IPC分类号： H01L23/522 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8244 ,  H01L27/088 ,  H01L27/092 ,  H01L27/11 ,  H01L29/76

CPC分类号： H01L27/11 ,  H01L21/823425 ,  H01L21/823475 ,  H01L27/088 ,  H01L27/092 ,  H01L29/6656

摘要： The object of the present invention is to suppress the increase of the contact resistance at the interface between the metal layer and the silicon plug in the wiring structure in which a metal layer is formed on and connected to a silicon plug. For its achievement, a lower semiconductor layer (drain) of a vertical-type MISFET is connected to an intermediate metal layer via an underlying plug composed of a polycrystalline silicon film, and a trap layer composed of a silicon nitride (TiN) film is formed on a part of the surface of the intermediate metal layer so as to surround the plug. The trap layer is formed in order to prevent an undesired high-resistance oxide layer from being formed at the interface between the plug and the intermediate metal layer.

摘要翻译： 本发明的目的是为了抑制金属层与硅插头之间的界面处的接触电阻的增加，其中形成金属层并连接到硅插头的布线结构中。 为了实现，垂直型MISFET的下半导体层（漏极）经由由多晶硅膜构成的下面的插塞连接到中间金属层，并且形成由氮化硅（TiN）膜构成的捕获层 在中间金属层的表面的一部分上，以围绕塞子。 形成陷阱层以防止在插塞和中间金属层之间的界面处形成不期望的高电阻氧化物层。

公开(公告)号：US06368087B2

公开(公告)日：2002-04-09

申请号：US09777868

申请日：2001-02-07

申请人： Toshiyuki Kikuchi ,  Ko Tsukamoto

发明人： Toshiyuki Kikuchi ,  Ko Tsukamoto

IPC分类号： F01C104

CPC分类号： F04C18/0269

摘要： A scroll-type compressor includes a fixed and an orbiting scroll each having an end plate and a spiral element on the end plate and interfits with each other. A first transition line at a widened-starting portion of the spiral element between an interior wall and a tip surface comprises a first upper arc connecting to an upper, interior involute wall starting point and a second upper arc connecting to an upper, exterior involute wall starting point and a straight line. A second transition line at the widened-starting portion between the interior wall and a base surface comprises a first lower arc connecting to a lower, interior involute wall starting point and a second lower arc connecting a lower, exterior involute wall starting point and a straight line.

摘要翻译： 一种涡旋式压缩机包括一个固定的和一个绕动的涡旋盘，它们在端板上具有一个端板和一个螺旋形元件，并且彼此相互配合。 在内壁和尖端表面之间的螺旋形元件的加宽起始部分处的第一过渡线包括连接到上部内部渐开线壁起点的第一上部弧线和连接到上部外部渐开线壁的第二上部弧线 起点和直线。 在内壁和基面之间的加宽起始部分处的第二过渡线包括连接到下内部渐开线壁起点的第一下弧线和连接下外部渐开线壁起点的第二下弧线和直线 线。