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公开(公告)号：US20070105383A1
公开(公告)日：2007-05-10
申请号：US11620516
申请日：2007-01-05
申请人： Robert Meagley , Heidi Cao , Kevin O'Brien
发明人： Robert Meagley , Heidi Cao , Kevin O'Brien
IPC分类号： H01L21/302
CPC分类号： G03F7/091 , G03F7/0045
摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.
摘要翻译： 有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。 更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。 此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。
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公开(公告)号：US20060216634A1
公开(公告)日：2006-09-28
申请号：US11087181
申请日：2005-03-22
申请人： Robert Meagley , Heidi Cao , Kevin O'Brien
发明人： Robert Meagley , Heidi Cao , Kevin O'Brien
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , G03F7/0045
摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.
摘要翻译： 有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。 更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。 此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。
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公开(公告)号：US20080220380A1
公开(公告)日：2008-09-11
申请号：US12075703
申请日：2008-03-13
IPC分类号： G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
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公开(公告)号：US20050106498A1
公开(公告)日：2005-05-19
申请号：US10964200
申请日：2004-10-12
申请人： Heidi Cao , Robert Meagley
发明人： Heidi Cao , Robert Meagley
CPC分类号： G03F7/039 , G03F7/0392 , Y10S430/106 , Y10S430/109 , Y10S430/111 , Y10S522/914
摘要： By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.
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公开(公告)号：US07374867B2
公开(公告)日：2008-05-20
申请号：US10679816
申请日：2003-10-06
IPC分类号： G03F7/26
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
摘要翻译： 电场可以有利地用于光刻工艺的各个步骤。 例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。 通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。 同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。 此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。 最后，可以在显影过程中施加电场以改善线边缘粗糙度。
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公开(公告)号：US20050074706A1
公开(公告)日：2005-04-07
申请号：US10679816
申请日：2003-10-06
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
摘要翻译： 电场可以有利地用于光刻工艺的各个步骤。 例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。 通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。 同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。 此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。 最后，可以在显影过程中施加电场以改善线边缘粗糙度。
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公开(公告)号：US20050069818A1
公开(公告)日：2005-03-31
申请号：US10676411
申请日：2003-09-30
申请人： Robert Bristol , Heidi Cao , Robert Meagley
发明人： Robert Bristol , Heidi Cao , Robert Meagley
CPC分类号： G03F7/0392 , G03F7/0046
摘要： An embodiment of the present invention includes a technique to provide a highly absorptive resist. A resist is formed using a highly absorbing material. The resist is thinned to a pre-determined thickness used as an imaging layer. The efficiency of a photoactive acid generator (PAG) is improved to capture secondary electrons produced by an ionizing radiation in the resist.
摘要翻译： 本发明的一个实施方案包括提供高吸收性抗蚀剂的技术。 使用高吸收性材料形成抗蚀剂。 将抗蚀剂变薄到用作成像层的预定厚度。 改善光活性酸发生剂（PAG）的效率以捕获由抗蚀剂中的电离辐射产生的二次电子。
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公开(公告)号：US20050058931A1
公开(公告)日：2005-03-17
申请号：US10663583
申请日：2003-09-16
申请人： Heidi Cao , Robert Meagley
发明人： Heidi Cao , Robert Meagley
CPC分类号： G03F7/039 , G03F7/0392 , Y10S430/106 , Y10S430/109 , Y10S430/111 , Y10S522/914
摘要： By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.
摘要翻译： 通过使用支链长链断裂聚合物作为EUV和157纳米应用的光致抗蚀剂，可以实现具有良好机械性能的相对较高分子量的聚合物。 另外，通过使用断链技术，线边缘粗糙度和分辨率可以同时提高。
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公开(公告)号：US20070032675A1
公开(公告)日：2007-02-08
申请号：US11580399
申请日：2006-10-13
申请人： Robert Meagley , Michael Goodner , Andrew Ott , Grant Kloster , Michael McSwiney , Bob Leet
发明人： Robert Meagley , Michael Goodner , Andrew Ott , Grant Kloster , Michael McSwiney , Bob Leet
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633
摘要： In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.
摘要翻译： 在一个实施方案中，本发明包括将含有烃取代基的前体和任选的第二常规或含烃前体引入气相沉积设备中; 以及在所述气相沉积设备内的所述前体上形成具有所述烃取代基的介电层。 在某些实施方案中，至少一部分烃取代基可以稍后从介电层去除以降低其密度。
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公开(公告)号：US20060205221A1
公开(公告)日：2006-09-14
申请号：US11417615
申请日：2006-05-03
申请人： Michael Goodner , Robert Meagley , Kevin O'Brien
发明人： Michael Goodner , Robert Meagley , Kevin O'Brien
IPC分类号： H01L21/465
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/76802
摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.
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