公开(公告)号：US20070105383A1

公开(公告)日：2007-05-10

申请号：US11620516

申请日：2007-01-05

申请人： Robert Meagley ,  Heidi Cao ,  Kevin O'Brien

发明人： Robert Meagley ,  Heidi Cao ,  Kevin O'Brien

IPC分类号： H01L21/302

CPC分类号： G03F7/091 ,  G03F7/0045

摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.

摘要翻译： 有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。 更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。 此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。

公开(公告)号：US20060216634A1

公开(公告)日：2006-09-28

申请号：US11087181

申请日：2005-03-22

申请人： Robert Meagley ,  Heidi Cao ,  Kevin O'Brien

发明人： Robert Meagley ,  Heidi Cao ,  Kevin O'Brien

IPC分类号： G03C1/00

CPC分类号： G03F7/091 ,  G03F7/0045

摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.

摘要翻译： 有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。 更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。 此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。

公开(公告)号：US20060205221A1

公开(公告)日：2006-09-14

申请号：US11417615

申请日：2006-05-03

申请人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

发明人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

IPC分类号： H01L21/465

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76802

摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

公开(公告)号：US20050239281A1

公开(公告)日：2005-10-27

申请号：US10829592

申请日：2004-04-21

申请人： Michael Goodner ,  Kevin O'Brien ,  Grant Kloster ,  Robert Meagley

发明人： Michael Goodner ,  Kevin O'Brien ,  Grant Kloster ,  Robert Meagley

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76808 ,  H01L21/76825 ,  H01L21/76831

摘要： The invention provides a layer of photosensitive material that may be directly patterned. The photosensitive material may then be decomposed to leave voids or air gaps in the layer. This may provide a low dielectric constant layer with reduced resistance capacitance delay characteristics.

摘要翻译： 本发明提供可以直接图案化的感光材料层。 然后可以将感光材料分解以留下该层中的空隙或气隙。 这可以提供具有降低的电阻电容延迟特性的低介电常数层。

公开(公告)号：US20060255432A1

公开(公告)日：2006-11-16

申请号：US11485078

申请日：2006-07-12

申请人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

发明人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

IPC分类号： H01L23/58

CPC分类号： H01L23/5222 ,  H01L21/02118 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/76224 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

公开(公告)号：US20050106886A1

公开(公告)日：2005-05-19

申请号：US10715956

申请日：2003-11-17

申请人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

发明人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76802

摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

摘要翻译： 描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。 这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。

公开(公告)号：US20050042874A1

公开(公告)日：2005-02-24

申请号：US10953744

申请日：2004-09-29

申请人： Robert Meagley ,  Peter Moon ,  Kevin O'Brien

发明人： Robert Meagley ,  Peter Moon ,  Kevin O'Brien

IPC分类号： H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808

摘要： A thermally decomposable sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The thermally decomposable sacrificial material may be removed without damaging or removing the dielectric layer. The thermally decomposable sacrificial material may be a combination of organic and inorganic materials, such as a hydrocarbon-siloxane polymer hybrid.

摘要翻译： 将可热分解的牺牲材料沉积在半导体衬底上的电介质层的空隙或开口中。 可以除去可热分解的牺牲材料而不损坏或去除介电层。 可热分解的牺牲材料可以是有机和无机材料的组合，例如烃 - 硅氧烷聚合物杂化物。

公开(公告)号：US10664576B2

公开(公告)日：2020-05-26

申请号：US15657201

申请日：2017-07-23

申请人： Darrin Edelman ,  Austin O'Brion ,  Kevin O'Brien

发明人： Darrin Edelman ,  Austin O'Brion ,  Kevin O'Brien

IPC分类号： G06F21/31 ,  G06F21/32 ,  G06F21/34 ,  G06Q20/40 ,  G06F21/33 ,  G06F21/45 ,  G06F3/0481

摘要： Provided are computer-implemented methods and systems used in assuring a person's identity that include the steps of receiving from the person one or more identifying statements and receiving from the person authorization to access one or more identity sources on which the person is registered. Data is then extracted from one or more of the identity sources to corroborate the one or more identifying statements, and the data aggregated to provide first and second scores, the first score representing factors that tend to affirm the person's identifying statements and the second score representing factors that tend to disaffirm the person's identifying statements. Optionally, the scores are displayed in a graphical user interface.

公开(公告)号：US20090321935A1

公开(公告)日：2009-12-31

申请号：US12215987

申请日：2008-06-30

申请人： Kevin O'Brien ,  Florian Gstrein ,  Sridhar Balakrishnan

发明人： Kevin O'Brien ,  Florian Gstrein ,  Sridhar Balakrishnan

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53223 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a doping material on an overburden region of a conductive structure, diffusing a portion of the doping material into a portion of the conductive structure, and then removing the overburden region.

摘要翻译： 描述了形成微电子结构的方法和相关结构。 这些方法可以包括在导电结构的覆盖层区域上形成掺杂材料，将掺杂材料的一部分扩散到导电结构的一部分中，然后去除覆盖层区域。

公开(公告)号：US20090278346A1

公开(公告)日：2009-11-12

申请号：US12116473

申请日：2008-05-07

申请人： Kevin O'Brien

发明人： Kevin O'Brien

IPC分类号： F16L55/00

CPC分类号： F16L37/091

摘要： A connector comprises a body having a passage therethrough for fluid flow and a female portion for receiving by a slip fit a tubular member. Gripping means are placed in the passage in the female portion for gripping the tubular member and is configured for preventing the tubular member from rotating. A retainer retains the gripping means in place and a seal prevents leakage.

摘要翻译： 连接器包括具有用于流体流动的通道的主体和用于通过滑动配合接收管状构件的阴部分。 夹持装置放置在阴部分中的通道中，用于夹持管状构件，并且构造成用于防止管状构件旋转。 保持器将夹持装置保持在适当位置，并且密封件防止泄漏。