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1.发明授权Variable-gain-amplifier based limiter to remove amplitude modulation from a VCO output 失效可变增益放大器的限幅器，用于从VCO输出中去除幅度调制公开(公告)号：US07205816B2
公开(公告)日：2007-04-17
申请号：US11155848
申请日：2005-06-17
CPC分类号： G06F1/04
摘要： An apparatus and method for generating high-speed clock signals using a voltage-controlled-oscillator (VCO) device. The apparatus implements a linear variable gain amplifier rather than a non-linear hard limiter to remove unwanted signal modulation in VCO output signals. Implementation of the linear variable gain amplifier leads to the generation of amplitude modulation-free oscillation leading to the generation of jitter free high frequency clock signals.
摘要翻译： 一种使用压控振荡器（VCO）装置产生高速时钟信号的装置和方法。 该装置实现线性可变增益放大器，而不是非线性硬限幅器，以消除VCO输出信号中不需要的信号调制。 线性可变增益放大器的实现导致无振幅调制的产生，导致产生无抖动的高频时钟信号。
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2.发明申请SOI FIELD EFFECT TRANSISTOR WITH A BACK GATE FOR MODULATING A FLOATING BODY 失效具有用于调制浮动体的后盖的SOI场效应晶体管公开(公告)号：US20090212362A1
公开(公告)日：2009-08-27
申请号：US12036325
申请日：2008-02-25
申请人： Kangguo Cheng , Louis C. Hsu , Jack A. Mandelman , Carl Radens , William Tonti
发明人： Kangguo Cheng , Louis C. Hsu , Jack A. Mandelman , Carl Radens , William Tonti
IPC分类号： H01L21/84 , H01L29/786
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/42384 , H01L29/66772 , H01L29/78612 , H01L29/78648
摘要： A masking layer is applied over a top semiconductor layer and patterned to expose in an opening a shallow trench isolation structure and a portion of a top semiconductor region within which a first source/drain region and a body is to be formed. Ions are implanted into a portion of a buried insulator layer within the area of the opening to form damaged buried insulator region. The shallow trench isolation structure is removed and the damaged buried insulator region is etched selective to undamaged buried insulator portions to form a cavity. A dielectric layer is formed on the sidewalls and the exposed bottom surface of the top semiconductor region and a back gate filling the cavity is formed. A contact is formed to provide an electrical bias to the back gate so that the electrical potential of the body and the first source/drain region is electrically modulated.
摘要翻译： 将掩模层施加在顶部半导体层上并且被图案化以在开口中暴露浅沟槽隔离结构以及要在其中形成第一源极/漏极区域和主体的顶部半导体区域的一部分。 将离子注入到开口区域内的埋入绝缘体层的一部分中以形成损坏的埋层绝缘体区域。 去除浅沟槽隔离结构，并且损坏的埋层绝缘体区域被选择性地蚀刻到未损坏的埋入绝缘体部分以形成空腔。 在顶部半导体区域的侧壁和暴露的底表面上形成介电层，并且形成填充空腔的背栅。 形成接触以向后栅极提供电偏压，使得主体和第一源极/漏极区域的电势被电调制。
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3.发明授权SOI field effect transistor with a back gate for modulating a floating body 失效具有用于调制浮体的背栅的SOI场效应晶体管公开(公告)号：US07772649B2
公开(公告)日：2010-08-10
申请号：US12036325
申请日：2008-02-25
申请人： Kangguo Cheng , Louis C. Hsu , Jack A. Mandelman , Carl Radens , William Tonti
发明人： Kangguo Cheng , Louis C. Hsu , Jack A. Mandelman , Carl Radens , William Tonti
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/42384 , H01L29/66772 , H01L29/78612 , H01L29/78648
摘要： A masking layer is applied over a top semiconductor layer and patterned to expose in an opening a shallow trench isolation structure and a portion of a top semiconductor region within which a first source/drain region and a body is to be formed. Ions are implanted into a portion of a buried insulator layer within the area of the opening to form damaged buried insulator region. The shallow trench isolation structure is removed and the damaged buried insulator region is etched selective to undamaged buried insulator portions to form a cavity. A dielectric layer is formed on the sidewalls and the exposed bottom surface of the top semiconductor region and a back gate filling the cavity is formed. A contact is formed to provide an electrical bias to the back gate so that the electrical potential of the body and the first source/drain region is electrically modulated.
摘要翻译： 将掩模层施加在顶部半导体层上并且被图案化以在开口中暴露浅沟槽隔离结构以及要在其中形成第一源极/漏极区域和主体的顶部半导体区域的一部分。 将离子注入到开口区域内的埋入绝缘体层的一部分中以形成损坏的埋层绝缘体区域。 去除浅沟槽隔离结构，并且损坏的埋层绝缘体区域被选择性地蚀刻到未损坏的埋入绝缘体部分以形成空腔。 在顶部半导体区域的侧壁和暴露的底表面上形成介电层，并且形成填充空腔的背栅。 形成接触以向后栅极提供电偏压，使得主体和第一源极/漏极区域的电势被电调制。
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公开(公告)号：US20090072290A1
公开(公告)日：2009-03-19
申请号：US11857770
申请日：2007-09-19
申请人： Kangguo Cheng , Louis C. Hsu , Jack A. Mandelman , William Tonti
发明人： Kangguo Cheng , Louis C. Hsu , Jack A. Mandelman , William Tonti
IPC分类号： H01L21/70 , H01L27/108
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0629 , H01L27/10861 , H01L28/60
摘要： An isolated shallow trench isolation portion is formed in a top semiconductor portion of a semiconductor-on-insulator substrate along with a shallow trench isolation structure. A trench in the shape of a ring is formed around a doped top semiconductor portion and filled with a conductive material such as doped polysilicon. The isolated shallow trench isolation portion and the portion of a buried insulator layer bounded by a ring of the conductive material are etched to form a cavity. A capacitor dielectric is formed on exposed semiconductor surfaces within the cavity and above the doped top semiconductor portion. A conductive material portion formed in the trench and above the doped top semiconductor portion constitutes an inner electrode of a capacitor, while the ring of the conductive material, the doped top semiconductor portion, and a portion of a handle substrate abutting the capacitor dielectric constitute a second electrode.
摘要翻译： 孤立的浅沟槽隔离部分形成在绝缘体上半导体衬底的顶部半导体部分以及浅沟槽隔离结构中。 环形形状的沟槽形成在掺杂顶部半导体部分周围，并填充有诸如掺杂多晶硅的导电材料。 隔离的浅沟槽隔离部分和由导电材料的环限定的掩埋绝缘体层的部分被蚀刻以形成空腔。 在空腔内的暴露的半导体表面上和掺杂的顶部半导体部分之上形成电容器电介质。 形成在沟槽中并且在掺杂顶部半导体部分上方的导电材料部分构成电容器的内部电极，而导电材料的环，掺杂的顶部半导体部分和与电容器电介质邻接的手柄衬底的一部分构成一个 第二电极。
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5.发明授权公开(公告)号：US08598641B2
公开(公告)日：2013-12-03
申请号：US13287170
申请日：2011-11-02
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823431 , H01L27/1211 , H01L29/66795 , H01L29/66803 , H01L29/785 , Y10S977/734 , Y10S977/742 , Y10S977/749 , Y10S977/815 , Y10S977/955
摘要： A semiconductor device and a method of fabricating a semiconductor device, wherein the method includes forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is adapted to be used in customized applications as a customized semiconductor device.
摘要翻译： 一种半导体器件和半导体器件的制造方法，其中该方法包括在衬底上形成多个用于定制鳍状场效应晶体管（FinFET）器件形成的平坦化翅片体; 在所述多个翅片体中的每一个周围形成氮化物间隔物; 在每个翅片体之间形成隔离区域; 并用保护膜涂覆多个翅片体，氮化物间隔物和隔离区域。 制造的半导体器件适用于定制应用中作为定制的半导体器件。
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6.发明申请公开(公告)号：US20120043597A1
公开(公告)日：2012-02-23
申请号：US13287170
申请日：2011-11-02
IPC分类号： H01L29/772
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823431 , H01L27/1211 , H01L29/66795 , H01L29/66803 , H01L29/785 , Y10S977/734 , Y10S977/742 , Y10S977/749 , Y10S977/815 , Y10S977/955
摘要： A semiconductor device and a method of fabricating a semiconductor device, wherein the method comprises forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is used in customized applications as a customized semiconductor device.
摘要翻译： 一种半导体器件和半导体器件的制造方法，其中所述方法包括在衬底上形成多个用于定制鳍状场效应晶体管（FinFET）器件形成的平坦化翅片体; 在所述多个翅片体中的每一个周围形成氮化物间隔物; 在每个翅片体之间形成隔离区域; 并用保护膜涂覆多个翅片体，氮化物间隔物和隔离区域。 制造的半导体器件用作定制应用中的定制半导体器件。
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公开(公告)号：US07728371B2
公开(公告)日：2010-06-01
申请号：US11857770
申请日：2007-09-19
申请人： Kangguo Cheng , Louis C Hsu , Jack A. Mandelman , William Tonti
发明人： Kangguo Cheng , Louis C Hsu , Jack A. Mandelman , William Tonti
IPC分类号： H01L27/108
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0629 , H01L27/10861 , H01L28/60
摘要： An isolated shallow trench isolation portion is formed in a top semiconductor portion of a semiconductor-on-insulator substrate along with a shallow trench isolation structure. A trench in the shape of a ring is formed around a doped top semiconductor portion and filled with a conductive material such as doped polysilicon. The isolated shallow trench isolation portion and the portion of a buried insulator layer bounded by a ring of the conductive material are etched to form a cavity. A capacitor dielectric is formed on exposed semiconductor surfaces within the cavity and above the doped top semiconductor portion. A conductive material portion formed in the trench and above the doped top semiconductor portion constitutes an inner electrode of a capacitor, while the ring of the conductive material, the doped top semiconductor portion, and a portion of a handle substrate abutting the capacitor dielectric constitute a second electrode.
摘要翻译： 孤立的浅沟槽隔离部分形成在绝缘体上半导体衬底的顶部半导体部分以及浅沟槽隔离结构中。 环形形状的沟槽形成在掺杂顶部半导体部分周围，并填充有诸如掺杂多晶硅的导电材料。 隔离的浅沟槽隔离部分和由导电材料的环限定的掩埋绝缘体层的部分被蚀刻以形成空腔。 在空腔内的暴露的半导体表面上和掺杂的顶部半导体部分之上形成电容器电介质。 形成在沟槽中并且在掺杂顶部半导体部分上方的导电材料部分构成电容器的内部电极，而导电材料的环，掺杂的顶部半导体部分和与电容器电介质邻接的手柄衬底的一部分构成一个 第二电极。
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公开(公告)号：US07390730B2
公开(公告)日：2008-06-24
申请号：US11742147
申请日：2007-04-30
申请人： Jack A. Mandelman , Louis C. Hsu , Rajiv V. Joshi
发明人： Jack A. Mandelman , Louis C. Hsu , Rajiv V. Joshi
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/84 , H01L27/108 , H01L27/10832 , H01L27/10858 , H01L27/1203 , H01L29/94
摘要： A semiconductor structure having a body capacitance plate, which is formed with a process that assures that the body capacitance plate is self-aligned to both the source line (SL) diffusion and the bitline diffusion is provided. Thus the amount of overlap between the SL and the bitline diffusions and the body capacitance plate is precisely controlled. More specifically, the present invention forms the structure of a 1T-capacitorless SOI body charge storage cell having sidewall capacitor plates using a process that assures that there is 1) minimal overlap between plate and source/drain diffusions, and 2) that the minimal overlap obtained in the present invention is precisely controlled and is not subject to alignment tolerances. The inventive cell results in larger signal margin, improved performance, smaller chip size, and reduced dynamic power dissipation relative to the prior art.
摘要翻译： 提供一种具有体电容板的半导体结构，其形成有确保体电容板与源极线（SL）扩散和位线扩散两者自对准的工艺。 因此，SL和位线扩散和体电容板之间的重叠量被精确地控制。 更具体地说，本发明通过使用确保存在1）板和源极/漏极扩散之间的最小重叠的过程形成具有侧壁电容器板的1T无电容的SOI体电荷存储单元的结构，以及2）最小重叠 在本发明中获得的精确控制并且不受对准公差的影响。 与现有技术相比，本发明的电池产生更大的信号余量，改善的性能，更小的芯片尺寸和降低的动态功耗。
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9.发明授权公开(公告)号：US08076190B2
公开(公告)日：2011-12-13
申请号：US12535007
申请日：2009-08-04
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823431 , H01L27/1211 , H01L29/66795 , H01L29/66803 , H01L29/785 , Y10S977/734 , Y10S977/742 , Y10S977/749 , Y10S977/815 , Y10S977/955
摘要： A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a substrate; forming nitride spacers on side walls of the parallel oxide bars, with gaps remaining between adjacent nitride spacers; forming silicon pillars in the gaps; removing the nitride spacers to form a plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film.
摘要翻译： 公开了半导体器件和制造半导体器件的方法，该方法包括：形成蚀刻氧化物层以在衬底上形成平行氧化物条的图案; 在平行氧化物条的侧壁上形成氮化物间隔物，间隙保留在相邻的氮化物间隔物之间; 在间隙中形成硅柱; 去除氮化物间隔件以形成多个翅片体; 在每个翅片体之间形成隔离区域; 并用保护膜涂覆多个翅片体，氮化物间隔物和隔离区域。
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10.发明申请公开(公告)号：US20090309136A1
公开(公告)日：2009-12-17
申请号：US12535007
申请日：2009-08-04
IPC分类号： H01L27/10 , H01L21/8232
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823431 , H01L27/1211 , H01L29/66795 , H01L29/66803 , H01L29/785 , Y10S977/734 , Y10S977/742 , Y10S977/749 , Y10S977/815 , Y10S977/955
摘要： A semiconductor device and a method of fabricating a semiconductor device, wherein the method comprises forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is adapted to be used in customized applications as a customized semiconductor device.
摘要翻译： 一种半导体器件和半导体器件的制造方法，其中所述方法包括在衬底上形成多个用于定制鳍状场效应晶体管（FinFET）器件形成的平坦化翅片体; 在所述多个翅片体中的每一个周围形成氮化物间隔物; 在每个翅片体之间形成隔离区域; 并用保护膜涂覆多个翅片体，氮化物间隔物和隔离区域。 制造的半导体器件适用于定制应用中作为定制的半导体器件。
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