公开(公告)号：US06544443B2

公开(公告)日：2003-04-08

申请号：US09730133

申请日：2000-12-05

申请人： Hideaki Niimi ,  Akira Ando ,  Mitsutoshi Kawamoto ,  Masahiro Kodama

发明人： Hideaki Niimi ,  Akira Ando ,  Mitsutoshi Kawamoto ,  Masahiro Kodama

IPC分类号： H01B108

CPC分类号： C04B35/468

摘要： The semiconducting ceramic material of the present invention containing BaTiO3 and having a positive temperature coefficient of resistance is endowed with high withstand voltage. In the semiconducting ceramic material, a boundary temperature defined at the boundary between a first temperature range and a second temperature range is 180° C. or more (e.g., 370° C.) higher than the Curie temperature, wherein the first temperature range is higher than the Curie temperature and the ceramic material has a positive temperature coefficient of resistance in the range, and the second temperature range is higher than the first temperature range and the ceramic material has a negative temperature coefficient of resistance in the range.

摘要翻译： 含有BaTiO 3并具有正温度系数的本发明的半导体陶瓷材料具有高的耐受电压。 在半导体陶瓷材料中，限定在第一温度范围和第二温度范围之间的边界处的边界温度比居里温度高180℃或更高（例如，370℃），其中第一温度范围为 高于居里温度，陶瓷材料的正温度系数在该范围内，第二温度范围高于第一温度范围，并且陶瓷材料的负温度系数在该范围内。

公开(公告)号：US06984355B2

公开(公告)日：2006-01-10

申请号：US10246008

申请日：2002-09-18

申请人： Hideaki Niimi ,  Akira Ando ,  Mitsutoshi Kawamoto ,  Masahiro Kodama

发明人： Hideaki Niimi ,  Akira Ando ,  Mitsutoshi Kawamoto ,  Masahiro Kodama

IPC分类号： C04B33/32

CPC分类号： H01C7/025 ,  H01C17/06533 ,  H01C17/265

摘要： A BaTiO3-type semiconducting ceramic material which has undergone firing in a reducing atmosphere and re-oxidation, wherein the relative density of the ceramic material after sintering is about 85–90%. A process for producing the semiconducting ceramic material of the present invention and a thermistor containing the semiconducting ceramic material are also disclosed.

摘要翻译： 一种在还原气氛中进行烧制并重新氧化的BaTiO 3 N型半导体陶瓷材料，其中烧结后陶瓷材料的相对密度约为85-90％。 还公开了本发明的半导体陶瓷材料的制造方法和含有半导体陶瓷材料的热敏电阻。

公开(公告)号：US06911893B2

公开(公告)日：2005-06-28

申请号：US10022715

申请日：2001-12-18

申请人： Masahiro Kodama ,  Atsushi Kishimoto ,  Mitsutoshi Kawamoto ,  Hideaki Niimi ,  Akira Ando

发明人： Masahiro Kodama ,  Atsushi Kishimoto ,  Mitsutoshi Kawamoto ,  Hideaki Niimi ,  Akira Ando

IPC分类号： C04B41/85 ,  C01G23/00 ,  C04B35/468 ,  C04B35/49 ,  H01C7/00 ,  H01C7/02 ,  H01C17/065 ,  H01L29/24 ,  H01C7/10

CPC分类号： H01C17/06533 ,  C01G23/002 ,  C01G23/006 ,  C01P2006/40 ,  C04B35/4682 ,  H01C7/021 ,  H01C7/025 ,  H01L29/24

摘要： A ceramic electronic component includes a component body having semiconductive ceramic layers and internal electrodes. The semiconductive ceramic layers and the internal electrodes are alternately laminated. The semiconductive ceramic layers have a relative density of about 90% or less and contain no sintering additives. The component body is provided with an external electrode on each side thereof. The ceramic electronic component has a low resistance and a high withstand voltage.

摘要翻译： 陶瓷电子部件包括具有半导体陶瓷层和内部电极的部件体。 半导体陶瓷层和内部电极交替层叠。 半导体陶瓷层的相对密度为约90％以下，不含烧结添加剂。 该组件主体的每一侧设置有外部电极。 陶瓷电子元件具有低电阻和高耐压。

公开(公告)号：US06791163B2

公开(公告)日：2004-09-14

申请号：US10657070

申请日：2003-09-09

申请人： Atsushi Kishimoto ,  Hideaki Niimi ,  Akira Ando

发明人： Atsushi Kishimoto ,  Hideaki Niimi ,  Akira Ando

IPC分类号： H01L2358

CPC分类号： C04B35/4682 ,  C04B2235/3224 ,  C04B2235/3262 ,  H01C7/021 ,  H01C7/18 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A chip electronic component including a ceramic element and terminal electrodes with metal coating thereon formed on the surface of the ceramic element. A glass layer is formed on a part of the surface of the ceramic element where the terminal electrodes are not formed. A glass material for the glass layer contains at least two species of alkali metal elements selected from Li, Na and K, and the total amount of the alkali metal elements is greater than or equal to 20 atomic percent of the total amount of elements except oxygen contained in the glass material.

公开(公告)号：US07348873B2

公开(公告)日：2008-03-25

申请号：US10595558

申请日：2004-09-13

申请人： Hideaki Niimi ,  Akira Ando

发明人： Hideaki Niimi ,  Akira Ando

IPC分类号： H01C7/10

CPC分类号： H01G7/06 ,  B32B18/00 ,  C04B35/4682 ,  C04B2235/3224 ,  C04B2235/6582 ,  C04B2237/346 ,  C04B2237/704 ,  H01C7/021 ,  H01C7/025 ,  H01C7/18 ,  H01G4/1227

摘要： A multilayer PTC thermistor reliably decreases the resistance by decreasing the thickness of ceramic layers composed of a BaTiO3 semiconductor ceramic and achieves a resistance close to the resistance calculated from the multilayer structure. The thermistor is adjusted to satisfy the conditions 5≦X≦18 and 4≦X·Y≦10, wherein X is a thickness (μm) of each ceramic layer disposed between adjacent internal electrodes and Y is a donor content (%) in the barium titanate semiconductor ceramic constituting the ceramic layers, Y being expressed in terms of (number of donor atoms/number of Ti atoms)×100.

摘要翻译： 多层PTC热敏电阻通过减小由BaTiO 3半导体陶瓷构成的陶瓷层的厚度可靠地降低电阻，并实现接近由多层结构计算的电阻的电阻。 调整热敏电阻以满足条件5 <= X <= 18且4 <= XY <= 10，其中X是设置在相邻内部电极之间的每个陶瓷层的厚度（母体），Y是供体含量（％） 在构成陶瓷层的钛酸钡半导体陶瓷中，Y以（供体原子数/ Ti原子数）×100表示​​。

公开(公告)号：US20070115090A1

公开(公告)日：2007-05-24

申请号：US10595558

申请日：2004-09-13

申请人： Hideaki Niimi ,  Akira Ando

发明人： Hideaki Niimi ,  Akira Ando

IPC分类号： H01C7/13

CPC分类号： H01G7/06 ,  B32B18/00 ,  C04B35/4682 ,  C04B2235/3224 ,  C04B2235/6582 ,  C04B2237/346 ,  C04B2237/704 ,  H01C7/021 ,  H01C7/025 ,  H01C7/18 ,  H01G4/1227

摘要： A multilayer PTC thermistor reliably decreases the resistance by decreasing the thickness of ceramic layers composed of a BaTiO3 semiconductor ceramic and achieves a resistance close to the resistance calculated from the multilayer structure. The thermistor is adjusted to satisfy the conditions 5≦X≦18 and 4≦X·Y≦10, wherein X is a thickness (μm) of each ceramic layer disposed between adjacent internal electrodes and Y is a donor content (%) in the barium titanate semiconductor ceramic constituting the ceramic layers, Y being expressed in terms of (number of donor atoms/number of Ti atoms)×100.

摘要翻译： 多层PTC热敏电阻通过减小由BaTiO 3半导体陶瓷构成的陶瓷层的厚度可靠地降低电阻，并实现接近由多层结构计算的电阻的电阻。 调整热敏电阻以满足条件5 <= X <= 18且4 <= XY <= 10，其中X是设置在相邻内部电极之间的每个陶瓷层的厚度（母体），Y是供体含量（％） 在构成陶瓷层的钛酸钡半导体陶瓷中，Y以（供体原子数/ Ti原子数）×100表示​​。

公开(公告)号：US07706221B2

公开(公告)日：2010-04-27

申请号：US11679261

申请日：2007-02-27

申请人： Akira Ando ,  Kazunori Uemura ,  Masahiro Fujimoto

发明人： Akira Ando ,  Kazunori Uemura ,  Masahiro Fujimoto

IPC分类号： G11B7/00

CPC分类号： G11B5/09 ,  G11B5/40 ,  G11B27/034 ,  G11B27/36 ,  G11B2220/2516 ,  G11B2220/2537

摘要： Disclosed herein is an information recording/reproducing apparatus that includes a first and a second recording/reproducing modules, a buffer memory to store information temporally, and a control module that switches between a first mode and a second mode when the information is dubbed from the first recording/reproducing module to the second recording/reproducing module. In the first mode, information in the first recording/reproducing module is reproduced and stored in the buffer memory. In the second mode, the information stored in the buffer memory is recorded in the second recording/reproducing module. The apparatus further includes a temperature detecting module. Depending on the temperature detected by this module, the apparatus changes the movement of the second recording/reproducing module in the first mode and the movement of the first recording/reproducing module in the second mode.

摘要翻译： 本文公开了一种信息记录/再现装置，其包括第一和第二记录/再现模块，用于在时间上存储信息的缓冲存储器，以及当信息从第一模式和第二模式被转录时在第一模式和第二模式之间切换的控制模块 第一记录/再现模块到第二记录/再现模块。 在第一模式中，第一记录/再现模块中的信息被再现并存储在缓冲存储器中。 在第二模式中，存储在缓冲存储器中的信息被记录在第二记录/再现模块中。 该装置还包括温度检测模块。 根据该模块检测到的温度，设备改变第二模式中的第二记录/再现模块的移动和第二模式中的第一记录/再现模块的移动。

公开(公告)号：US07516413B2

公开(公告)日：2009-04-07

申请号：US10237782

申请日：2002-09-09

申请人： Yuichiro Toh ,  Akira Ando ,  Kumiko Sasaki

发明人： Yuichiro Toh ,  Akira Ando ,  Kumiko Sasaki

IPC分类号： G06F3/00

CPC分类号： G06F3/0486

摘要： In order to record content on a hard disk drive to a source, when a source icon corresponding to the hard disk drive is dragged in a source icon section on a control bar in a display window, an arrow is added above an available source icon corresponding to an MD drive to which the content read from the hard disk drive can be supplied and recorded. An unavailable source icon corresponding to a source to which the content cannot be supplied and recorded is displayed in a grayed-out manner. When the dragged source icon is dropped onto the source icon corresponding to the MD drive, the content on the hard disk drive is read, and is recorded to an MD inserted in the MD drive.

摘要翻译： 为了将硬盘驱动器上的内容记录到源上，当在显示窗口中的控制栏上的源图标部分中拖动与硬盘驱动器对应的源图标时，将在对应的可用源图标上方添加箭头 到可以提供和记录从硬盘驱动器读取的内容的MD驱动器。 与不能提供和记录内容的源相对应的不可用源图标以灰色显示方式显示。 当拖动的源图标被丢弃到与MD驱动器相对应的源图标上时，读取硬盘驱动器上的内容，并记录到MD驱动器中插入的MD。

公开(公告)号：US20070201176A1

公开(公告)日：2007-08-30

申请号：US11709081

申请日：2007-02-22

申请人： Masatoshi Yokai ,  Satoshi Yoshimura ,  Akira Ando

发明人： Masatoshi Yokai ,  Satoshi Yoshimura ,  Akira Ando

IPC分类号： H02H5/04

CPC分类号： H02M7/53875 ,  H02M1/32

摘要： An inverter apparatus includes an inverter circuit, a temperature sensor, and a control circuit. The inverter circuit is driven by a PWM signal and includes switching elements that are divided in first and second groups. The temperature sensor detects a temperature of at least one of the switching elements of the first group. The control circuit controls a duty cycle of the PWM signal such that a first value of heat generated in the first group is equal to or greater than a second value of heat generated in the second group. The control circuit performs an overheat protection for protecting the inverter circuit from overheating when the detected temperature is equal to or greater than a threshold temperature.

摘要翻译： 逆变器装置包括逆变器电路，温度传感器和控制电路。 逆变器电路由PWM信号驱动，并且包括在第一组和第二组中分开的开关元件。 温度传感器检测第一组的至少一个开关元件的温度。 控制电路控制PWM信号的占空比，使得第一组中产生的热的第一值等于或大于第二组中产生的热的第二值。 当检测到的温度等于或大于阈值温度时，控制电路执行过热保护以保护逆变器电路免于过热。

公开(公告)号：US20050210866A1

公开(公告)日：2005-09-29

申请号：US11025153

申请日：2004-12-30

申请人： Makoto Ito ,  Akira Ando ,  Shigeru Takeuchi

发明人： Makoto Ito ,  Akira Ando ,  Shigeru Takeuchi

IPC分类号： F02D43/00 ,  F01N3/00 ,  F01N3/10 ,  F01N3/22 ,  F01N3/32 ,  F01N3/34 ,  F01N11/00 ,  F02D41/22 ,  F02D45/00 ,  F02K99/00 ,  F02M33/02 ,  F01N7/00 ,  F02K11/00

CPC分类号： F02D41/221 ,  F01N3/22 ,  F01N3/32 ,  F01N11/00 ,  F02D2041/2075 ,  Y02T10/20 ,  Y02T10/40 ,  Y02T10/47

摘要： In a secondary air injection system, MOSFETs control supply of electric current to an air pump and to a motor for driving an electromagnetic valve and to an electromagnetic coil to introduce secondary air into an exhaust gas passage upstream of a catalyst for purifying the exhaust gas of an internal combustion engine. Gate drive circuits control the MOSFETs based on an instruction from an ECU via input signal processing circuits. Abnormal conditions in the operation for controlling the air pump and the electromagnetic valve are detected, and, when an abnormal condition is detected, forcibly turn the MOSFETs off to interrupt the current to the motor and to the electromagnetic coil. A diagnosing circuit sends to the ECU diagnosis signals representing the state of controlling the load.

摘要翻译： 在二次空气喷射系统中，MOSFET控制向空气泵和用于驱动电磁阀和电磁线圈的电动机的电流供应，以将二次空气引入到用于净化废气的催化剂上游的废气通道 内燃机 栅极驱动电路根据来自ECU的指令通过输入信号处理电路来控制MOSFET。 检测用于控制空气泵和电磁阀的操作的异常情况，并且当检测到异常情况时，强制关闭MOSFET以中断到电动机和电磁线圈的电流。 诊断电路向ECU发送表示控制负载状态的诊断信号。