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公开(公告)号：US20050181628A1
公开(公告)日：2005-08-18
申请号：US11107800
申请日：2005-04-18
IPC分类号： C08G79/08 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/51 , H01L21/8242
CPC分类号： H01L21/02118 , H01L21/02164 , H01L21/312 , H01L21/314 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A process for preparing a low dielectric constant material comprising heat-treating a compound containing a borazine skeleton structure of the formula: wherein at least one of R1 to R6 is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not a hydrogen atom.
摘要翻译： 一种制备低介电常数材料的方法，包括热处理含有下式的环硼氮烷骨架结构的化合物：其中R 1至R 6中的至少一个为 将所述环硼氮烷骨架结构结合成无机或有机化合物的分子和/或R 1至R 6的键独立地为氢原子，具有1个 20个碳原子，芳基，取代芳基，烯基，氨基，烷基氨基，烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基，膦基， 烷基膦基或下式的基团：Si（OR 7）（OR 8）（OR 9））和至少一个 R 1至R 6不是氢原子。
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公开(公告)号：US08674046B2
公开(公告)日：2014-03-18
申请号：US12558810
申请日：2009-09-14
CPC分类号： H01L21/02118 , H01L21/02164 , H01L21/312 , H01L21/314 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.
摘要翻译： 通过热处理式（1-2）的环硼氮烷化合物获得的具有优异耐水性的低介电常数材料或具有衍生自环硼氮烷化合物（1-2）的基团的无机或有机化合物进行缩合 反应，由此制备低聚物或聚合物，其中R 1至R 6独立地为氢原子，具有1至20个碳原子的烷基，芳基，取代的芳基，烯基，氨基，烷基氨基， 烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基，膦基，烷基膦基或下式的基团：Si（OR7）（OR8）（OR9），和至少一个 的R 1至R 6不是氢原子。
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公开(公告)号：US20100004425A1
公开(公告)日：2010-01-07
申请号：US12558810
申请日：2009-09-14
CPC分类号： H01L21/02118 , H01L21/02164 , H01L21/312 , H01L21/314 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.
摘要翻译： 通过热处理式（1-2）的环硼氮烷化合物获得的具有优异耐水性的低介电常数材料或具有衍生自环硼氮烷化合物（1-2）的基团的无机或有机化合物进行缩合 反应，由此制备低聚物或聚合物，其中R 1至R 6独立地为氢原子，具有1至20个碳原子的烷基，芳基，取代的芳基，烯基，氨基，烷基氨基， 烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基，膦基，烷基膦基或下式的基团：Si（OR7）（OR8）（OR9），和至少一个 的R 1至R 6不是氢原子。
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4.发明授权Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device 有权低介电常数材料，包含低介电常数材料的绝缘膜和半导体器件公开(公告)号：US06924240B2
公开(公告)日：2005-08-02
申请号：US10266794
申请日：2002-10-09
IPC分类号： C08G79/08 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02118 , H01L21/02164 , H01L21/312 , H01L21/314 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A low dielectric constant material having excellent water resistance comprising a borazine skeleton structure represented by any one of the formulas (2) to (4): wherein R1 to R4 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkyiphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), provided that at least one of R1 to R4 is not a hydrogen atom.
摘要翻译： 具有优异的耐水性的低介电常数材料，包括由式（2）至（4）中的任一个表示的环硼氮烷骨架结构：其中R 1至R 4为 独立地为氢原子，碳原子数1〜20的烷基，芳基，取代芳基，烯基，烷基氨基，烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基 基团，膦基，烷基膦基或下式的基团：Si（OR 7）（OR 8）（OR 8） ），条件是R 1至R 4中的至少一个不是氢原子。
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5.发明授权Via-filling material and process for fabricating semiconductor integrated circuit using the material 失效通孔填充材料和使用该材料的半导体集成电路的制造工艺公开(公告)号：US07030007B2
公开(公告)日：2006-04-18
申请号：US10623772
申请日：2003-07-22
申请人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
发明人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
IPC分类号： H01L21/47
CPC分类号： H01L21/76808 , H01L21/02118 , H01L21/0212 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3127 , H01L21/76814
摘要： A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(═O)O— or —S(═O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.
摘要翻译： 通孔填充材料包括含有由氢，氟，氯，溴和甲基中的R 1〜1个表示的重复单元的聚合物; R 2是氢，C 1-3烷基和被取代氢的C 1-4烷基中的一个 通过氟，氯和溴中的至少一种; 并且X是-C（-O）O-或-S（-O）2 O-。 这种通孔填充材料在等离子体蚀刻期间不会在通孔的开口附近产生沉积物，并且提供具有高可靠性的半导体集成电路，即使当通过等离子体蚀刻形成通孔以外的沟槽时，通孔周围填充有通孔 通孔填充材料。
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6.发明申请Via-filling material and process for fabricating semiconductor integrated circuit using the material 失效通孔填充材料和使用该材料制造半导体集成电路的工艺公开(公告)号：US20050101123A1
公开(公告)日：2005-05-12
申请号：US10623772
申请日：2003-07-22
申请人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
发明人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
IPC分类号： C08L33/04 , C08F20/22 , C08L63/00 , H01L21/311 , H01L21/312 , H01L21/768 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76808 , H01L21/02118 , H01L21/0212 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3127 , H01L21/76814
摘要： A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(═O)O or —S(═O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.
摘要翻译： 通孔填充材料包括含有由氢，氟，氯，溴和甲基中的R 1〜1个表示的重复单元的聚合物; R 2是氢，C 1-3烷基和被取代氢的C 1-4烷基中的一个 通过氟，氯和溴中的至少一种; 并且X是-C（-O）O或-S（-O）2 O-。 这种通孔填充材料在等离子体蚀刻期间不会在通孔的开口附近产生沉积物，并且提供具有高可靠性的半导体集成电路，即使当通过等离子体蚀刻形成通孔以外的沟槽时，通孔周围填充有通孔 通孔填充材料。
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7.发明授权Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device 有权半导体装置用绝缘膜，半导体装置用绝缘膜的制造方法及装置，半导体装置及半导体装置的制造方法公开(公告)号：US08288294B2
公开(公告)日：2012-10-16
申请号：US13001256
申请日：2009-06-25
申请人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
发明人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
IPC分类号： H01L21/31
CPC分类号： H01L21/318 , C23C16/342 , C23C16/507 , H01L21/02112 , H01L21/02274 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (2); an electromagnetic wave is introduced into the chamber (2) using with an inductive coupling type plasma generation mechanism (4, 5, 6) to convert the gas into a plasma; a substrate (8) is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate (8).
摘要翻译： 本发明的目的是提供具有低介电常数，低漏电流和高机械强度特性的半导体器件用绝缘膜，随着时间的推移，这些特性的变化变小，具有优异的耐水性， 以及提供用于制造用于半导体器件的绝缘膜，半导体器件和用于制造半导体器件的工艺的工艺和设备。 在室（2）内供给含有气化了规定的烷基
硼氮化合物的原料气体的气体。 使用电感耦合型等离子体产生机构（4,5,6）将电磁波引入腔室（2），以将气体转换成等离子体; 将衬底（8）放置在等离子体的等离子体扩散区域中; 用作为基本单元的环硼烷骨架分子进行气相聚合，通过等离子体与烷基硼氮化合物离解，从而在基板（8）上形成用于半导体器件的绝缘膜。-
公开(公告)号：US07981790B2
公开(公告)日：2011-07-19
申请号：US12683949
申请日：2010-01-07
IPC分类号： H01L21/4763
CPC分类号： H01L21/02271 , H01L21/314 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.
摘要翻译： 提供一种半导体器件及其制造方法，其采用环硼氮烷化合物的绝缘膜，以提供绝缘材料和互连材料，增加的机械强度和其它改进的特性之间的增强的接触。 半导体器件包括具有埋设有第一导体层的凹部的第一绝缘层，形成在第一绝缘层上的蚀刻阻挡层，形成在蚀刻停止层上的第二绝缘层，形成在第二绝缘层上的第三绝缘层 层，以及埋在第二绝缘层和第三绝缘层的凹部中的第二导体层。 第二绝缘层和第三绝缘层通过化学气相沉积生长，其中含有碳源的环硼氮烷化合物用作源材料，第三绝缘层的碳含量比第二绝缘层小。
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9.发明申请MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, INSULATING FILM FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING APPARATUS OF THE SAME 审中-公开半导体器件的制造方法，半导体器件的绝缘膜及其制造装置公开(公告)号：US20100181654A1
公开(公告)日：2010-07-22
申请号：US12664605
申请日：2009-06-13
申请人： Toshihito Fujiwara , Toshihiko Nishimori , Toshiya Watanabe , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Chiho Mizushima , Takuya Kamiyama , Tetsuya Yamamoto
发明人： Toshihito Fujiwara , Toshihiko Nishimori , Toshiya Watanabe , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Chiho Mizushima , Takuya Kamiyama , Tetsuya Yamamoto
IPC分类号： H01L23/58 , H01L21/471
CPC分类号： H01L21/02118 , C23C16/342 , C23C16/505 , H01L21/02274 , H01L21/02348 , H01L21/02351 , H01L21/312 , H01L21/76801
摘要： An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film. The production process comprises a film forming step of supplying a mixed gas containing a carrier gas and a raw material gas, which is a gasified material having borazine skeletal molecules, into a chamber, causing the mixed gas to be in a plasma state, applying a bias to the substrate placed in the chamber, and carrying out gas-phase polymerization by using the borazine skeletal molecule as a fundamental unit so as to form the insulating film on the substrate; and a reaction promoting step of, after the film forming step, bringing the bias applied to the substrate to a different magnitude from the bias in the film forming step, supplying the mixed gas while gradually reducing only the raw material gas, which is the gasified material having the borazine skeletal molecules, treating the insulating film with a plasma mainly comprising the carrier gas.
摘要翻译： 提供具有低介电常数，低泄漏电流和高机械强度特性的半导体器件绝缘膜的目的是经历这些特性的小的时间依赖性变化，并且具有优异的耐水性，并且提供制造 以及使用该绝缘膜的半导体器件的制造方法。 制造方法包括：将含有载气的混合气体和作为具有环硼氮烷骨架分子的气化材料的原料气体供给到室中的成膜工序，使混合气体处于等离子体状态， 偏置于放置在室内的基板上，通过使用环硼氮烷骨架分子作为基本单元进行气相聚合，以在基板上形成绝缘膜; 以及反应促进步骤，在成膜步骤之后，使得施加到基板上的偏压与成膜步骤中的偏压大小不同，供给混合气体，同时逐渐减少气化的原料气体 具有环硼烷骨架分子的材料，以主要包含载气的等离子体处理绝缘膜。
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公开(公告)号：US20100112805A1
公开(公告)日：2010-05-06
申请号：US12683949
申请日：2010-01-07
IPC分类号： H01L21/768
CPC分类号： H01L21/02271 , H01L21/314 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.
摘要翻译： 提供一种半导体器件及其制造方法，其采用环硼氮烷化合物的绝缘膜，以提供绝缘材料和互连材料，增加的机械强度和其它改进的特性之间的增强的接触。 半导体器件包括具有埋设有第一导体层的凹部的第一绝缘层，形成在第一绝缘层上的蚀刻阻挡层，形成在蚀刻停止层上的第二绝缘层，形成在第二绝缘层上的第三绝缘层 层，以及埋在第二绝缘层和第三绝缘层的凹部中的第二导体层。 第二绝缘层和第三绝缘层通过化学气相沉积生长，其中含有碳源的环硼氮烷化合物用作源材料，第三绝缘层的碳含量比第二绝缘层小。
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