公开(公告)号：US07521299B2

公开(公告)日：2009-04-21

申请号：US11140748

申请日：2005-06-01

申请人： Hideki Tanaka ,  Takashi Masuda ,  Ichio Yudasaka ,  Takashi Aoki

发明人： Hideki Tanaka ,  Takashi Masuda ,  Ichio Yudasaka ,  Takashi Aoki

IPC分类号： H01L21/84

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L27/1292 ,  H01L27/283 ,  H01L29/66757 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0541

摘要： A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.

摘要翻译： 一种晶体管的制造方法，其特征在于，在基板上设置含有作为溶质或分散质的堤料的液滴，干燥所述液滴以形成堤，在所述堤的一部分上排出导电性物质，形成第一导电性区域和 第二导电区域，其中一部分插入其间，去除堤以在第一和第二导电区域之间形成沟槽，将半导体材料供应到沟槽中以形成半导体膜，在半导体膜上形成栅极绝缘膜， 以及在面对半导体膜的栅极绝缘膜上的位置处形成栅电极。

公开(公告)号：US20060154406A1

公开(公告)日：2006-07-13

申请号：US11140748

申请日：2005-06-01

申请人： Hideki Tanaka ,  Takashi Masuda ,  Ichio Yudasaka ,  Takashi Aoki

发明人： Hideki Tanaka ,  Takashi Masuda ,  Ichio Yudasaka ,  Takashi Aoki

IPC分类号： H01L21/8232 ,  H01L21/335

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L27/1292 ,  H01L27/283 ,  H01L29/66757 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0541

摘要： A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.

公开(公告)号：US07510093B2

公开(公告)日：2009-03-31

申请号：US11200162

申请日：2005-08-10

申请人： Takashi Aoki ,  Takashi Masuda ,  Hideki Tanaka ,  Ichio Yudasaka

发明人： Takashi Aoki ,  Takashi Masuda ,  Hideki Tanaka ,  Ichio Yudasaka

IPC分类号： H01B13/00 ,  H01L21/302

CPC分类号： H01L21/32139 ,  G02B6/43 ,  H01L21/28123 ,  H01L27/1292 ,  H05K3/061 ,  H05K2203/013

摘要： An etching method of the invention includes arranging droplets including a film-forming material on a substrate, drying each of the droplets to form a dry film having a width smaller than the diameter of each droplet at the time of the arrangement, and performing etching while using the dry film as an etching protective film.

摘要翻译： 本发明的蚀刻方法包括将包含成膜材料的液滴布置在基板上，干燥每个液滴以形成宽度小于布置时每个液滴的直径的干膜，并进行蚀刻，同时 使用干膜作为蚀刻保护膜。

公开(公告)号：US20060037935A1

公开(公告)日：2006-02-23

申请号：US11200162

申请日：2005-08-10

申请人： Takashi Aoki ,  Takashi Masuda ,  Hideki Tanaka ,  Ichiro Yudasaka

发明人： Takashi Aoki ,  Takashi Masuda ,  Hideki Tanaka ,  Ichiro Yudasaka

IPC分类号： H01B13/00 ,  B29D11/00

CPC分类号： H01L21/32139 ,  G02B6/43 ,  H01L21/28123 ,  H01L27/1292 ,  H05K3/061 ,  H05K2203/013

摘要： An etching method of the invention includes arranging droplets including a film-forming material on a substrate, drying each of the droplets to form a dry film having a width smaller than the diameter of each droplet at the time of the arrangement, and performing etching while using the dry film as an etching protective film.

公开(公告)号：US07375774B2

公开(公告)日：2008-05-20

申请号：US11032135

申请日：2005-01-11

申请人： Hideki Tanaka ,  Ichio Yudasaka ,  Masami Miyasaka

发明人： Hideki Tanaka ,  Ichio Yudasaka ,  Masami Miyasaka

IPC分类号： G02F1/136

CPC分类号： G02F1/136227 ,  G02F1/133345

摘要： A simple method of manufacturing a semiconductor device including a thick and dense insulator layer having a uniform film thickness includes forming the insulator layer by repeatedly applying a liquid material to a conductive layer plural times.

摘要翻译： 制造包括具有均匀膜厚度的厚而致密的绝缘体层的半导体器件的简单方法包括通过重复地将液体材料多次施加到导电层来形成绝缘体层。

公开(公告)号：US20050196910A1

公开(公告)日：2005-09-08

申请号：US11065126

申请日：2005-02-24

申请人： Ichio Yudasaka ,  Hideki Tanaka

发明人： Ichio Yudasaka ,  Hideki Tanaka

IPC分类号： H01L21/288 ,  H01L21/20 ,  H01L21/336 ,  H01L21/768 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78681

摘要： Exemplary embodiments of the present invention provide a method of manufacturing a semiconductor device that can take a connection between layers without giving damage to a layer, which is underlying. The semiconductor device includes forming conductive members Ms and Md at a predetermined position of a semiconductor film, forming an insulating film on a whole surface of a substrate excluding the conductive members Ms and Md, and forming a conductive film that is connected to the semiconductor film with the conductive member Ms and Md.

摘要翻译： 本发明的示例性实施例提供一种制造半导体器件的方法，该半导体器件可以在层之间进行连接，而不会损害下层的层。 半导体器件包括在半导体膜的预定位置处形成导电构件Ms和Md，在除了导电构件Ms和Md之外的衬底的整个表面上形成绝缘膜，并且形成连接到半导体膜的导电膜 与导电构件Ms和Md。

公开(公告)号：US08723015B2

公开(公告)日：2014-05-13

申请号：US11364000

申请日：2006-03-01

申请人： Hideki Tanaka ,  Ichio Yudasaka ,  Masahiro Furusawa ,  Tsutomu Miyamoto ,  Tatsuya Shimoda

发明人： Hideki Tanaka ,  Ichio Yudasaka ,  Masahiro Furusawa ,  Tsutomu Miyamoto ,  Tatsuya Shimoda

IPC分类号： H01L25/00

CPC分类号： H01L31/125 ,  H01L31/02167 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

摘要翻译： 光电转换装置包括设置在基板上的多个光电转换区域和设置在基板上的光电转换区域之间的着色区域，着色区域在基板上形成图像。

公开(公告)号：US07405134B2

公开(公告)日：2008-07-29

申请号：US11065126

申请日：2005-02-24

申请人： Ichio Yudasaka ,  Hideki Tanaka

发明人： Ichio Yudasaka ,  Hideki Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L29/41733 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78681

摘要： Exemplary embodiments of the present invention provide a method of manufacturing a semiconductor device that can take a connection between layers without giving damage to a layer, which is underlying. The semiconductor device includes forming conductive members Ms and Md at a predetermined position of a semiconductor film, forming an insulating film on a whole surface of a substrate excluding the conductive members Ms and Md, and forming a conductive film that is connected to the semiconductor film with the conductive member Ms and Md.

摘要翻译： 本发明的示例性实施例提供一种制造半导体器件的方法，该半导体器件可以在层之间进行连接，而不会损害下层的层。 半导体器件包括在半导体膜的预定位置处形成导电构件Ms和Md，在除了导电构件Ms和Md之外的基板的整个表面上形成绝缘膜，并且形成连接到半导体膜的导电膜 与导电构件Ms和Md。

公开(公告)号：US20060214088A1

公开(公告)日：2006-09-28

申请号：US11374119

申请日：2006-03-14

申请人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

发明人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

IPC分类号： G01J1/42

CPC分类号： H01L31/077 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.

公开(公告)号：US20050161836A1

公开(公告)日：2005-07-28

申请号：US11016709

申请日：2004-12-21

申请人： Ichio Yudasaka ,  Hideki Tanaka

发明人： Ichio Yudasaka ,  Hideki Tanaka

IPC分类号： H01L29/786 ,  H01L21/00 ,  H01L21/027 ,  H01L21/208 ,  H01L21/31 ,  H01L21/336 ,  H01L21/68 ,  H01L21/76 ,  H01L21/77 ,  H01L21/84 ,  H01L23/544

CPC分类号： H01L29/66757 ,  H01L23/544 ,  H01L27/1292 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Aspects of the invention can provide an alignment method that is preferably applicable when manufacturing equipments by liquid-phase processing. The alignment method in a device manufacturing process can include forming of a functional film on a substrate by liquid-phase processing, forming an alignment mark on the substrate on which the functional film is formed so as to make a pattern of the alignment mark appear on a film that is formed after forming the functional film, and aligning the film that is formed after forming the functional film by using the alignment mark.

摘要翻译： 本发明的方面可以提供一种当通过液相处理制造设备时优选的对准方法。 装置制造工序中的取向方法可以包括通过液相处理在基板上形成功能膜，在其上形成有功能膜的基板上形成对准标记，使得对准标记的图案出现在 在形成功能膜之后形成的膜，并且通过使用对准标记使在形成功能膜之后形成的膜对准。