公开(公告)号：US08723015B2

公开(公告)日：2014-05-13

申请号：US11364000

申请日：2006-03-01

申请人： Hideki Tanaka ,  Ichio Yudasaka ,  Masahiro Furusawa ,  Tsutomu Miyamoto ,  Tatsuya Shimoda

发明人： Hideki Tanaka ,  Ichio Yudasaka ,  Masahiro Furusawa ,  Tsutomu Miyamoto ,  Tatsuya Shimoda

IPC分类号： H01L25/00

CPC分类号： H01L31/125 ,  H01L31/02167 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

摘要翻译： 光电转换装置包括设置在基板上的多个光电转换区域和设置在基板上的光电转换区域之间的着色区域，着色区域在基板上形成图像。

公开(公告)号：US20060213547A1

公开(公告)日：2006-09-28

申请号：US11364000

申请日：2006-03-01

申请人： Hideki Tanaka ,  Ichio Yudasaka ,  Masahiro Furusawa ,  Tsutomu Miyamoto ,  Tatsuya Shimoda

发明人： Hideki Tanaka ,  Ichio Yudasaka ,  Masahiro Furusawa ,  Tsutomu Miyamoto ,  Tatsuya Shimoda

IPC分类号： H02N6/00

CPC分类号： H01L31/125 ,  H01L31/02167 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

摘要翻译： 光电转换装置包括设置在基板上的多个光电转换区域和设置在基板上的光电转换区域之间的着色区域，着色区域在基板上形成图像。

公开(公告)号：US20060214088A1

公开(公告)日：2006-09-28

申请号：US11374119

申请日：2006-03-14

申请人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

发明人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

IPC分类号： G01J1/42

CPC分类号： H01L31/077 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.

公开(公告)号：US07524718B2

公开(公告)日：2009-04-28

申请号：US11374119

申请日：2006-03-14

申请人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

发明人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

IPC分类号： H01L21/8238

CPC分类号： H01L31/077 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.

摘要翻译： 一种光电转换器的制造方法，包括：在基板上形成第一电极; 在所述第一电极上形成第一导电型半导体层; 在所述第一导电型半导体层上形成I型半导体层; 在所述I型半导体层上形成与所述第一导电型不同的第二导电型半导体层; 以及在所述第二导电型半导体层上形成第二电极，其中所述I型半导体层的形成包括：通过布置含有硅化合物的液滴，在所述第一导电型半导体层上形成所述I型半导体层的前体膜 在一个岛屿形状; 并通过对前体膜进行热处理或光照射处理将前体膜转变成I型半导体层。

公开(公告)号：US06541354B1

公开(公告)日：2003-04-01

申请号：US09701647

申请日：2000-11-30

申请人： Tatsuya Shimoda ,  Satoru Miyashita ,  Shunichi Seki ,  Masahiro Furusawa ,  Ichio Yudasaka ,  Yasumasa Takeuchi ,  Yasuo Matsuki

发明人： Tatsuya Shimoda ,  Satoru Miyashita ,  Shunichi Seki ,  Masahiro Furusawa ,  Ichio Yudasaka ,  Yasumasa Takeuchi ,  Yasuo Matsuki

IPC分类号： H01L2120

CPC分类号： H01L21/0242 ,  C30B7/00 ,  C30B7/005 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02628 ,  H01L21/02675

摘要： A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as by CVD methods.

摘要翻译： 将含有不含碳的环状硅烷化合物和/或通过硼或磷改性的硅烷化合物的溶液施加到基板上，形成硅前体膜，然后通过加热将膜转变成半导体硅， /或轻度治疗。 由此，与真空工艺不同，例如通过CVD方法，可以以低成本容易地制造具有令人满意的特性的硅膜作为电子材料。

公开(公告)号：US07118943B2

公开(公告)日：2006-10-10

申请号：US10417181

申请日：2003-04-17

申请人： Ichio Yudasaka ,  Tatsuya Shimoda ,  Masahiro Furusawa

发明人： Ichio Yudasaka ,  Tatsuya Shimoda ,  Masahiro Furusawa

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/288 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02639 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292

摘要： In this production method of a thin film device, a thin film is formed by discharging a liquid material from a nozzle in a deposition chamber to coat the liquid material onto a substrate. The substrate is then subjected to heat treatment by a first heat treatment unit and a second heat treatment unit, thereby improving the crystallinity and fitness of the film as well as its adhesion with other films.

摘要翻译： 在这种薄膜器件的制造方法中，通过从沉积室中的喷嘴排出液体材料以将液体材料涂覆到基板上来形成薄膜。 然后通过第一热处理单元和第二热处理单元对基板进行热处理，从而提高膜的结晶度和适用性以及其与其它膜的粘合性。

公开(公告)号：US06846513B2

公开(公告)日：2005-01-25

申请号：US10028712

申请日：2001-12-28

申请人： Masahiro Furusawa ,  Satoru Miyashita ,  Ichio Yudasaka ,  Tatsuya Shimoda ,  Yasuaki Yokoyama ,  Yasuo Matsuki ,  Yasumasa Takeuchi

发明人： Masahiro Furusawa ,  Satoru Miyashita ,  Ichio Yudasaka ,  Tatsuya Shimoda ,  Yasuaki Yokoyama ,  Yasuo Matsuki ,  Yasumasa Takeuchi

IPC分类号： C23C16/24 ,  B32B9/04 ,  C23C16/04 ,  C23C16/448 ,  H01L21/205

CPC分类号： C23C16/042 ,  B82Y30/00 ,  C23C16/24 ,  C23C16/4481 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02439 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02661

摘要： Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.

摘要翻译： 提供一种形成硅薄膜的方法，其包括在一个或多个部分中布置包含硅烷和/或其衍生物的硅化物的液体排列表面液体的步骤，所述硅烷包括硅和氢， 以及通过从液体中蒸发硅化物并将硅化物供给到薄膜形成表面来形成硅薄膜的步骤。

公开(公告)号：US06518087B1

公开(公告)日：2003-02-11

申请号：US09701646

申请日：2000-11-30

申请人： Masahiro Furusawa ,  Shunichi Seki ,  Satoru Miyashita ,  Tatsuya Shimoda ,  Ichio Yudasaka ,  Yasuo Matsuki ,  Yasumasa Takeuchi

发明人： Masahiro Furusawa ,  Shunichi Seki ,  Satoru Miyashita ,  Tatsuya Shimoda ,  Ichio Yudasaka ,  Yasuo Matsuki ,  Yasumasa Takeuchi

IPC分类号： H01L2100

CPC分类号： H01L31/202 ,  H01L31/046 ,  H01L31/077 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

摘要： A solar battery is provided having a structure in which at least two semiconductor thin-films are disposed one over the other between a pair of electrodes, each semiconductor thin-film differing from the other in the impurity concentration thereof and/or the type of semiconductor. Formation of at least one of the semiconductor thin-films consists of coating a liquid coating composition containing a silicon compound so as to form a coating film and a step of converting the coating film into a silicon film by heat treatment and/or light treatment.

摘要翻译： 提供了一种太阳能电池，其具有这样的结构，其中至少两个半导体薄膜彼此之间设置在一对电极之间，每个半导体薄膜在其杂质浓度和/或半导体的类型中彼此不同 。 至少一个半导体薄膜的形成包括涂覆含有硅化合物的液体涂料组合物以形成涂膜和通过热处理和/或光处理将涂膜转化为硅膜的步骤。

公开(公告)号：US07084428B2

公开(公告)日：2006-08-01

申请号：US10717503

申请日：2003-11-21

申请人： Ichio Yudasaka ,  Masahiro Furusawa ,  Takashi Aoki

发明人： Ichio Yudasaka ,  Masahiro Furusawa ,  Takashi Aoki

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78636

摘要： There is provided a transistor and a method of manufacturing this transistor that allow a high degree of freedom when designing a wiring structure and also allow an improvement in product quality to be achieved. The transistor includes a source area, a drain area, and a channel area, each of which are formed by semiconductor films, and also a gate insulating film and a gate electrode. The semiconductor film containing the source area and the semiconductor film containing the drain area are formed separately sandwiching both sides of an insulating member. The semiconductor film containing the channel area is formed on top of the insulating member.

摘要翻译： 提供晶体管和制造该晶体管的方法，其在设计布线结构时允许高自由度，并且还可以实现提高产品质量。 晶体管包括源极区域，漏极区域和沟道区域，每个沟道区域由半导体膜形成，以及栅极绝缘膜和栅电极。 包含源极区域的半导体膜和包含漏极区域的半导体膜形成为分开地夹着绝缘构件的两侧。 包含沟道区的半导体膜形成在绝缘构件的顶部。

公开(公告)号：US06884700B2

公开(公告)日：2005-04-26

申请号：US10420525

申请日：2003-04-22

申请人： Takashi Aoki ,  Masahiro Furusawa ,  Ichio Yudasaka

发明人： Takashi Aoki ,  Masahiro Furusawa ,  Ichio Yudasaka

IPC分类号： H01L21/288 ,  H01L21/20 ,  H01L21/208 ,  H01L21/3205 ,  H01L21/336 ,  H01L29/786 ,  H01L21/36

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02636 ,  H01L21/32055 ,  H01L27/1292 ,  H01L29/78618

摘要： A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of applying a liquid material to form an applied film; and a heat treatment and/or a light irradiating treatment of making the applied film into the silicon film, wherein, as the liquid material, a high-order silane composition comprising a high-order silence formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.

摘要翻译： 一种制造包括单独薄膜的器件的方法，包括硅膜，栅极绝缘膜，用于栅电极的导电膜，层间绝缘膜和用于电极和布线的导电膜，包括： 液体材料形成涂膜; 以及将涂布膜制成硅膜的热处理和/或光照射处理，其中，作为液体材料，通过照射具有光聚合反应形成的高阶沉积的硅烷化合物溶液作为液体材料， 使用紫外线的光聚合性。