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    Chamber apparatus and extreme ultraviolet (EUV) light generation apparatus including the chamber apparatus
    3.
    发明授权
    Chamber apparatus and extreme ultraviolet (EUV) light generation apparatus including the chamber apparatus 有权
    包括室装置的室内装置和极紫外（EUV）光发生装置

    公开(公告)号：US08698113B2

    公开(公告)日：2014-04-15

    申请号：US13696517

    申请日：2011-12-13

    申请人： Masato Moriya ,  Osamu Wakabayashi

    发明人： Masato Moriya ,  Osamu Wakabayashi

    IPC分类号： H05G2/00

    CPC分类号： G03F7/708 ,  G03F7/70008 ,  G03F7/70808 ,  G03F7/70833

    摘要： A chamber apparatus used with a laser apparatus may include a chamber, a beam expanding optical system, and a focusing optical system. The chamber may be provided with at least one inlet, through which a laser beam outputted from the laser apparatus is introduced into the chamber. The beam expanding optical system is configured to expand the laser beam in diameter. The focusing optical system is configured to focus the laser beam that has been expanded in diameter.

    摘要翻译： 与激光装置一起使用的室装置可以包括室，扩束光学系统和聚焦光学系统。 该室可以设置有至少一个入口，激光装置输出的激光束通过该入口被引入腔室。 扩束光学系统被配置为直径地扩大激光束。 聚焦光学系统被配置为聚焦已经扩大直径的激光束。

    Semiconductor exposure device using extreme ultra violet radiation
    4.
    发明授权
    Semiconductor exposure device using extreme ultra violet radiation 有权
    半导体曝光装置采用极紫外辐射

    公开(公告)号：US08507885B2

    公开(公告)日：2013-08-13

    申请号：US13494778

    申请日：2012-06-12

    申请人： Masato Moriya ,  Osamu Wakabayashi ,  Georg Soumagne

    发明人： Masato Moriya ,  Osamu Wakabayashi ,  Georg Soumagne

    IPC分类号： G21K5/04

    CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

    摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

    摘要翻译： 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

    Extreme ultraviolet light source apparatus
    6.
    发明授权
    Extreme ultraviolet light source apparatus 有权
    极紫外光源设备

    公开(公告)号：US08445876B2

    公开(公告)日：2013-05-21

    申请号：US12603872

    申请日：2009-10-22

    申请人： Takashi Suganuma ,  Masato Moriya ,  Tamotsu Abe ,  Kouji Kakizaki ,  Osamu Wakabayashi

    发明人： Takashi Suganuma ,  Masato Moriya ,  Tamotsu Abe ,  Kouji Kakizaki ,  Osamu Wakabayashi

    IPC分类号： H01J35/00 ,  G03B27/54

    CPC分类号： G03F7/70891 ,  G03F7/70033 ,  G03F7/70141 ,  G03F7/70175 ,  G03F7/70191 ,  G03F7/70575 ,  G03F7/70591 ,  G03F7/7085 ,  H05G2/005

    摘要： An extreme ultraviolet (EUV) light source apparatus in which a location or posture shift of an EUV collector mirror can be detected. The apparatus includes: a chamber; a target supply mechanism for supplying a target material into the chamber; a driver laser for irradiating the target material with a laser beam to generate plasma; a collector mirror having a first focal point and a second focal point, for reflecting light, which is generated at the first focal point, toward the second focal point; a splitter optical element provided in an optical path of the light reflected by the collector mirror, for splitting a part of the light reflected by the collector mirror; and an image sensor provided in an optical path of the light split by the splitter optical element, for detecting a profile of the light split by the splitter optical element.

    摘要翻译： 可以检测EUV收集镜的位置或姿势偏移的极紫外（EUV）光源装置。 该装置包括：一个室; 用于将目标材料供应到所述室中的目标供给机构; 用于用激光束照射目标材料以产生等离子体的驱动器激光器; 收集器反射镜，具有第一焦点和第二焦点，用于将在第一焦点处产生的光朝向第二焦点反射; 分离器光学元件，设置在由集光镜反射的光的光路中，用于分离由集光镜反射的一部分光; 以及图像传感器，其设置在由分离光学元件分离的光的光路中，用于检测由分离光学元件分离的光的轮廓。

    Semiconductor exposure device using extreme ultra violet radiation
    8.
    发明授权
    Semiconductor exposure device using extreme ultra violet radiation 有权
    半导体曝光装置采用极紫外辐射

    公开(公告)号：US08227778B2

    公开(公告)日：2012-07-24

    申请号：US12469176

    申请日：2009-05-20

    申请人： Masato Moriya ,  Osamu Wakabayashi ,  Georg Soumagne

    发明人： Masato Moriya ,  Osamu Wakabayashi ,  Georg Soumagne

    IPC分类号： G21K5/04

    CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

    摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

    摘要翻译： 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

    Alignment system and extreme ultraviolet light generation system
    9.
    发明授权
    Alignment system and extreme ultraviolet light generation system 有权
    对准系统和极紫外光发生系统

    公开(公告)号：US09325150B2

    公开(公告)日：2016-04-26

    申请号：US14238405

    申请日：2012-09-05

    申请人： Masato Moriya ,  Osamu Wakabayashi

    发明人： Masato Moriya ,  Osamu Wakabayashi

    IPC分类号： H05G2/00 ,  H01S3/101 ,  H01S3/23 ,  H01S3/00

    CPC分类号： H01S3/101 ,  H01S3/005 ,  H01S3/0078 ,  H01S3/2391 ,  H05G2/008

    摘要： An alignment system for a laser apparatus includes a guide laser device outputting a guide laser beam, an adjusting mechanism adjusting travel directions of the guide laser beam and a laser beam from the laser apparatus, a beam path combiner controlling travel directions of the laser beam and the guide laser beam to substantially coincide with each other, a first optical detection unit provided from the beam path combiner detecting the laser and guide laser beams, a first controller controlling the adjusting mechanism based on a first optical detection unit detection result, a beam steering unit downstream from the beam path combiner controlling travel directions of the laser and guide laser beams, a second optical detection unit downstream from the beam steering unit detecting the guide laser beam, and a second controller controlling the beam steering unit based on a second optical detection unit detection result.

    摘要翻译： 用于激光装置的对准系统包括：输出导向激光束的导向激光装置，调整引导激光束的行进方向的调节机构和来自激光装置的激光束;光束组合器，控制激光束的行进方向; 所述引导激光束彼此基本一致，从所述光束组合器提供的检测所述激光和引导激光束的第一光学检测单元，基于第一光学检测单元检测结果控制所述调节机构的第一控制器， 控制光束路径组合器的下游，控制激光束和引导激光束的行进方向，第二光学检测单元，在检测引导激光束的光束转向单元的下游;以及第二控制器，其基于第二光学检测器控制光束转向单元 单位检测结果。