公开(公告)号：US07323356B2

公开(公告)日：2008-01-29

申请号：US10505219

申请日：2003-02-19

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

IPC分类号： H01L21/06 ,  C30B1/02 ,  C04B35/50

CPC分类号： C30B33/00 ,  C30B1/02 ,  C30B23/02 ,  C30B29/22 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02631 ,  H01L29/24 ,  H01L33/26

摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.

摘要翻译： 公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种）， 其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火 。 或者更多。 虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发射效率和电子迁移率的多晶物质 或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体雷达，场效应晶体管或异质双极晶体管的建筑物黑色。

公开(公告)号：US20050158993A1

公开(公告)日：2005-07-21

申请号：US10505219

申请日：2003-02-19

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

IPC分类号： C30B29/22 ,  C09K11/00 ,  C09K11/08 ,  C09K11/84 ,  C09K11/88 ,  C30B23/02 ,  C30B33/00 ,  C30B33/02 ,  H01L21/205 ,  H01L21/363 ,  H01L21/365 ,  H01L29/24 ,  H01L33/26 ,  H01L21/44

CPC分类号： C30B33/00 ,  C30B1/02 ,  C30B23/02 ,  C30B29/22 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02631 ,  H01L29/24 ,  H01L33/26

摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor Teasers, filed-effect transistors, or a hetero-bipolar transistors.

摘要翻译： 公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种）， 其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火 。 或者更多。 虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发光效率和电子迁移率的多晶物质 或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体薄片，场效应晶体管或异质双极晶体管的建筑物黑色。

公开(公告)号：US07061014B2

公开(公告)日：2006-06-13

申请号：US10494247

申请日：2002-10-31

申请人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

发明人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L29/7869 ,  C30B23/02 ,  C30B29/22 ,  C30B29/68 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693

摘要： Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

摘要翻译： 公开了一种天然超晶格同源单晶薄膜，其包括外延生长在单晶衬底上形成的ZnO外延薄膜之一上的复合氧化物，ZnO外延消失后的单晶衬底 薄膜和ZnO单晶。 复合氧化物由下式表示：其中M（M）2 O 3（ZnO）m，其中M 至少一种选自Ga，Fe，Sc，In，Lu，Yb，Tm，Er，Ho和Y中的至少一种，M 2至少为 选自Mn，Fe，Ga，In和Al中的一种，m为1以上的自然数。 通过沉积复合氧化物并使得到的层状膜进行热退火处理而形成的天然超晶格同晶单晶薄膜可以用于最佳器件，电子器件和X射线光学器件中。

公开(公告)号：US20050039670A1

公开(公告)日：2005-02-24

申请号：US10494247

申请日：2002-10-31

申请人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

发明人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

IPC分类号： C30B23/02 ,  H01L21/336 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  C30B1/00

CPC分类号： H01L29/7869 ,  C30B23/02 ,  C30B29/22 ,  C30B29/68 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693

摘要： Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

摘要翻译： 公开了一种天然超晶格同源单晶薄膜，其包括外延生长在单晶衬底上形成的ZnO外延薄膜中的任何一种上的复合氧化物，ZnO外延消失后的单晶衬底 薄膜和ZnO单晶。 复合氧化物用下式表示：M 1 M 2 O 3（ZnO）m，其中M 1是选自Ga，Fe，Sc，In，Lu，Yb中的至少一种 ，Tm，Er，Ho和Y，M 2为选自Mn，Fe，Ga，In和Al中的至少一种，m为1以上的自然数。 通过沉积复合氧化物并使得到的层状膜进行热退火处理而形成的天然超晶格同晶单晶薄膜可以用于最佳器件，电子器件和X射线光学器件中。

公开(公告)号：US06897560B2

公开(公告)日：2005-05-24

申请号：US10311352

申请日：2001-07-09

申请人： Hiromichi Ota ,  Masahiro Orita ,  Hideo Hosono ,  Masahiro Hirano

发明人： Hiromichi Ota ,  Masahiro Orita ,  Hideo Hosono ,  Masahiro Hirano

IPC分类号： C23C14/08 ,  C23C16/40 ,  C30B23/02 ,  C30B25/02 ,  H01B5/14 ,  H01B13/00 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/18 ,  H01L51/00 ,  H01L51/40 ,  H01L23/48

CPC分类号： C30B23/02 ,  C23C14/08 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L31/022466 ,  H01L31/1884 ,  H01L33/42 ,  H01L51/0021 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500° C. and an oxygen partial pressure of 0 to 1 Pa.

摘要翻译： 本发明提供了包含Ga 2 O 3 O 3结晶的紫外线透明导电膜。 该膜在240至800nm或240至400nm的波长范围内具有透明度，并且由Ga 2 N 3 O 3中的缺氧或掺杂剂引起的电导率， SUB>晶体。 掺杂剂包括选自由Sn，Ge，Si，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo和W组成的组中的至少一种元素。紫外线透明导电膜通过 脉冲激光沉积法，溅射法，CVD法和MBE法，在基板温度为600〜1500℃，氧分压为0〜1Pa的条件下进行。

公开(公告)号：US20110045985A1

公开(公告)日：2011-02-24

申请号：US12934931

申请日：2009-02-20

申请人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

发明人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

IPC分类号： C22C30/00 ,  H01L39/00 ,  H01L39/24 ,  C22C30/02

CPC分类号： C01G55/002 ,  C01B25/088 ,  C01G49/009 ,  C01G53/006 ,  C01P2002/22 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2006/40 ,  C01P2006/42 ,  H01L39/125

摘要： A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM)2Pn2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).

摘要翻译： 一种超导体，其包含取代钙钛矿铜氧化物的新化合物组合物。 超导体的特征在于包含由化学式A（TM）2Pn2表示的化合物[其中A是选自组1中的元素，组2中的元素或组3中的元素（Sc ，Y和稀土金属元素）; TM是选自过渡金属元素Fe，Ru，Os，Ni，Pd或Pt中的至少一种; 并且Pn是选自第15族元素（pnicogen元素）中的至少一种元素]，并且其具有包含与元素（A）的金属层交替的（TM）Pn层的无限层晶体结构。

公开(公告)号：US20110111965A1

公开(公告)日：2011-05-12

申请号：US13003149

申请日：2009-07-09

申请人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Takatoshi Nomura ,  Yoichi Kamihara

发明人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Takatoshi Nomura ,  Yoichi Kamihara

IPC分类号： H01L39/24 ,  H01L39/00 ,  B22F3/10 ,  C01B33/10 ,  C09K3/00

CPC分类号： C01G49/009 ,  C01G53/006 ,  C01G55/002 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2002/78 ,  C01P2004/61 ,  C01P2004/80 ,  C01P2006/40 ,  C01P2006/42 ,  C04B35/515 ,  C04B35/5154 ,  C04B35/553 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/40 ,  C04B2235/401 ,  C04B2235/405 ,  C04B2235/445 ,  C04B2235/446 ,  C04B2235/5436 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L39/125

摘要： Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor.Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.

摘要翻译： 提供新的非氧化物系复合材料超导体作为钙钛矿型铜氧化物超导体的替代品。 由化学式AF（TM）Pn表示的分层化合物（其中，A是选自长型周期表中的第二族元素的F中的至少一种，F是氟离子，TM是至少一种选择的 由一组由Fe，Ru，Os，Ni，Pd和Pt组成的过渡金属元素，Pn是选自由长型周期表中的第十五族系元素组成的组中的至少一种），具有晶体结构 的ZrCuSiAs型（空间群P4 / nmm），通过掺杂三价阳离子或二价阴离子成为超导体。

公开(公告)号：US08420236B2

公开(公告)日：2013-04-16

申请号：US11909020

申请日：2006-08-01

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hidenori Hiramatsu ,  Toshio Kamiya ,  Hiroshi Yanagi ,  Eiji Motomitsu

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hidenori Hiramatsu ,  Toshio Kamiya ,  Hiroshi Yanagi ,  Eiji Motomitsu

IPC分类号： B32B15/04

CPC分类号： H01F10/193 ,  C01G45/006 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2006/40 ,  C01P2006/42 ,  C04B35/50 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3234 ,  C04B2235/3262 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/40 ,  C04B2235/42 ,  H01F1/0009 ,  H01F1/407 ,  Y10T428/325

摘要： A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.

摘要翻译： 磁性半导体材料在d原子轨道中含有至少一种在d原子轨道中具有五个电子的过渡金属（Mn2 +，Fe3 +，Ru3 +，Re2 +和Os3 +）作为磁性离子，其中磁性半导体材料表现出n型导电 注入电子载体和p型导电注入孔载体。 具体实例是由LnMnOPn（其中Ln是选自Y中的至少一种和La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er的稀土元素中的至少一种类型的层状氧基化合物） ，Tm，Yb和Lu，Pn为选自N，P，As，Bi和Sb中的至少一种元素）。 可以通过使用由磁性半导体材料构成的薄膜制成的磁性pn均质结构来制造高灵敏度的磁传感器，电流传感器或存储器件。

公开(公告)号：US20090042058A1

公开(公告)日：2009-02-12

申请号：US11909020

申请日：2006-08-01

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hidenori Hiramatsu ,  Toshio Kamiya ,  Hiroshi Yanagi ,  Eiji Motomitsu

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hidenori Hiramatsu ,  Toshio Kamiya ,  Hiroshi Yanagi ,  Eiji Motomitsu

IPC分类号： H01F1/04

CPC分类号： H01F10/193 ,  C01G45/006 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2006/40 ,  C01P2006/42 ,  C04B35/50 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3234 ,  C04B2235/3262 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/40 ,  C04B2235/42 ,  H01F1/0009 ,  H01F1/407 ,  Y10T428/325

摘要： A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.

摘要翻译： 磁性半导体材料在d原子轨道中含有至少一种在d原子轨道中具有五个电子的过渡金属（Mn2 +，Fe3 +，Ru3 +，Re2 +和Os3 +）作为磁性离子，其中磁性半导体材料表现出n型导电 注入电子载体和p型导电注入孔载体。 具体实例是由LnMnOPn（其中Ln是选自Y中的至少一种和La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er的稀土元素中的至少一种类型的层状氧基化合物） ，Tm，Yb和Lu，Pn为选自N，P，As，Bi和Sb中的至少一种元素）。 可以通过使用由磁性半导体材料构成的薄膜制成的磁性pn均质结构来制造高灵敏度的磁传感器，电流传感器或存储器件。

公开(公告)号：US08288321B2

公开(公告)日：2012-10-16

申请号：US13003149

申请日：2009-07-09

申请人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Takatoshi Nomura ,  Yoichi Kamihara

发明人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Takatoshi Nomura ,  Yoichi Kamihara

IPC分类号： C04B35/45

CPC分类号： C01G49/009 ,  C01G53/006 ,  C01G55/002 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2002/78 ,  C01P2004/61 ,  C01P2004/80 ,  C01P2006/40 ,  C01P2006/42 ,  C04B35/515 ,  C04B35/5154 ,  C04B35/553 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/40 ,  C04B2235/401 ,  C04B2235/405 ,  C04B2235/445 ,  C04B2235/446 ,  C04B2235/5436 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L39/125

摘要： Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor.Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.

摘要翻译： 提供新的非氧化物系复合材料超导体作为钙钛矿型铜氧化物超导体的替代品。 由化学式AF（TM）Pn表示的分层化合物（其中，A是选自长型周期表中的第二族元素的F中的至少一种，F是氟离子，TM是至少一种选择的 由一组由Fe，Ru，Os，Ni，Pd和Pt组成的过渡金属元素，Pn是选自由长型周期表中的第十五族系元素组成的组中的至少一种），具有晶体结构 的ZrCuSiAs型（空间群P4 / nmm），通过掺杂三价阳离子或二价阴离子成为超导体。