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1.发明授权Sputtering target material, silicon-containing film forming method, and photomask blank 有权溅射靶材料，含硅膜形成方法和光掩模坯料公开(公告)号：US08647795B2
公开(公告)日：2014-02-11
申请号：US13273656
申请日：2011-10-14
申请人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
发明人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/0676 , C23C14/564 , G03F1/54
摘要： Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
摘要翻译： 提供了一种硅靶材料，其中在溅射工艺期间不容易产生颗粒并形成低缺陷（高质量）含硅膜。 使用在室温下电阻率为20Ω·cm以上的硅靶材料来形成含硅膜。 硅靶材料可以是多晶的或非晶的。 然而，当硅靶材料是单晶时，可以获得更稳定的放电状态。 此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。 此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。 根据本发明，只有一种或多种硅靶材料可用于溅射含硅膜的成膜。
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2.发明申请METHOD FOR INSPECTING PHOTOMASK BLANK OR INTERMEDIATE THEREOF, METHOD FOR DETERMINING DOSAGE OF HIGH-ENERGY RADIATION, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK 有权用于检查光电隔离膜或其中间体的方法，用于确定高能量辐射剂量的方法，以及制造光电离空白的方法公开(公告)号：US20100248091A1
公开(公告)日：2010-09-30
申请号：US12750121
申请日：2010-03-30
申请人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
摘要翻译： 通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料， 从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于 经过衬底形状调整处理的相移膜的应力。
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公开(公告)号：US08920666B2
公开(公告)日：2014-12-30
申请号：US12779998
申请日：2010-05-14
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译： 本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到 硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法 蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻 已经进行。
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公开(公告)号：US08148036B2
公开(公告)日：2012-04-03
申请号：US12750044
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
摘要： A photomask blank comprises a transparent substrate, a light-shielding film of an optionally transition metal-containing silicon material, and an etching mask film of a chromium compound base material. The etching mask film consists of multiple layers of different composition which are deposited by reactive sputtering, the multiple layers including, in combination, a first layer of a material which imparts a compression stress when deposited on the substrate as a single composition layer and a second layer of a material which imparts a tensile stress when deposited on the substrate as a single composition layer.
摘要翻译： 光掩模坯料包括透明基板，任选含过渡金属的硅材料的遮光膜和铬化合物基材的蚀刻掩模膜。 蚀刻掩模膜由通过反应溅射沉积的不同组成的多层组成，多层组合包括当作为单一组合物层沉积在基板上时施加压缩应力的材料的第一层，第二层 当作为单一组合物层沉积在基材上时施加拉伸应力的材料层。
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公开(公告)号：US20100291478A1
公开(公告)日：2010-11-18
申请号：US12779998
申请日：2010-05-14
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译： 本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到 硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法 蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻 已经进行。
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公开(公告)号：US07736824B2
公开(公告)日：2010-06-15
申请号：US11952283
申请日：2007-12-07
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译： 一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层 和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻 速率在表面。 本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模 从其获得的相移掩模。
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7.发明授权Method of producing phase shift mask blank, method of producing phase shift mask, phase shift mask blank, and phase shift mask 有权产生相移掩模空白的方法，产生相移掩模的方法，相移掩模空白和相移掩模公开(公告)号：US07344806B2
公开(公告)日：2008-03-18
申请号：US10806202
申请日：2004-03-23
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3464 , G03F1/54 , G03F1/68
摘要： There is disclosed a method of producing a phase shift mask blank wherein the method includes at least a step of forming one or more layers of phase shift films on a substrate by a sputtering method, and in the step, the phase shift films are formed by the sputtering method while simultaneously discharging plural targets having different compositions. Thereby, a phase shift mask blank having a desired composition and quality, in particular, having a phase shift film with few defects can be easily produced.
摘要翻译： 公开了一种制造相移掩模板的方法，其中该方法至少包括通过溅射法在衬底上形成一层或多层相移膜的步骤，并且在该步骤中，相移膜由 同时排出具有不同组成的多个靶的溅射方法。 由此，可以容易地制造具有期望的组成和质量的相移掩模坯料，特别是具有少量缺陷的相移膜。
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公开(公告)号：US20070092807A1
公开(公告)日：2007-04-26
申请号：US11545451
申请日：2006-10-11
CPC分类号： G03F1/32 , Y10T428/31616
摘要： A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part, taking into consideration the composition or thickness of a thin film formed on the substrate and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may be composed of a stack of a plurality of opaque quartz layers having different opacities.
摘要翻译： 具有最基本结构的感受体具有包括第一和第二透明石英部分和夹在其间的不透明石英部分的三层结构。 例如，不透明石英部分由“发泡石英”制成。 此外，考虑到在基板上形成的薄膜的组成或厚度以及各种不同的形状，不透明石英部分对闪光的不透明度被确定为基于不透明石英部分的材料或厚度在适当范围内 关于闪光照射等期间的照射光的能量的条件。 堆叠结构可以由具有不同不透明度的多个不透明石英层的堆叠构成。
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公开(公告)号：US08309277B2
公开(公告)日：2012-11-13
申请号：US12813137
申请日：2010-06-10
IPC分类号： G03F1/50
摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。
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10.发明授权Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank 有权检查光掩模坯料或其中间体的方法，用于确定高能辐射剂量的方法，以及制造光掩模坯料的方法公开(公告)号：US08168351B2
公开(公告)日：2012-05-01
申请号：US12750121
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
摘要翻译： 通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料， 从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于 经过衬底形状调整处理的相移膜的应力。
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