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    Solid state imaging device having impurity concentration on light receiving surface being greater or equal to that on opposing surface
    1.
    发明授权
    Solid state imaging device having impurity concentration on light receiving surface being greater or equal to that on opposing surface 有权
    在光接收表面上具有大于或等于相对表面上的杂质浓度的固态成像装置

    公开(公告)号：US09570489B2

    公开(公告)日：2017-02-14

    申请号：US13540760

    申请日：2012-07-03

    申请人： Hideo Kido ,  Takayuki Enomoto ,  Hideaki Togashi

    发明人： Hideo Kido ,  Takayuki Enomoto ,  Hideaki Togashi

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14614 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/378

    摘要： A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.

    摘要翻译： 固态成像装置包括：由形成在半导体衬底的第一主面侧上的第一第一导电型半导体区域和形成在半导体衬底内的第一第二导电型半导体区域构成的第一光电二极管 与第一第一导电型半导体区相邻; 由形成在半导体衬底的第二主面侧上的第二第一导电型半导体区域和与第二第一导电型半导体区域相邻形成的第二第二导电型半导体区域构成的第二光电二极管， 型半导体区域; 以及形成在所述半导体衬底的所述第一主面侧上的栅电极; 第二第一导电型半导体区域和第二第二导电型半导体区域之间的连接面的杂质浓度等于或大于第二第一导电型半导体区域的相对层的连接面的杂质浓度， 第二导电型半导体区域的半导体区域。

    SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
    2.
    发明申请
    SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE 有权
    固态成像装置，固态成像装置的制造方法和电子装置

    公开(公告)号：US20130015513A1

    公开(公告)日：2013-01-17

    申请号：US13540760

    申请日：2012-07-03

    申请人： Hideo Kido ,  Takayuki Enomoto ,  Hideaki Togashi

    发明人： Hideo Kido ,  Takayuki Enomoto ,  Hideaki Togashi

    IPC分类号： H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/14614 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/378

    摘要： A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.

    摘要翻译： 固态成像装置包括：由形成在半导体衬底的第一主面侧上的第一第一导电型半导体区域和形成在半导体衬底内的第一第二导电型半导体区域构成的第一光电二极管 与第一第一导电型半导体区相邻; 由形成在半导体衬底的第二主面侧上的第二第一导电型半导体区域和与第二第一导电型半导体区域相邻形成的第二第二导电型半导体区域构成的第二光电二极管， 型半导体区域; 以及形成在所述半导体衬底的所述第一主面侧上的栅电极; 第二第一导电型半导体区域和第二第二导电型半导体区域之间的连接面的杂质浓度等于或大于第二第一导电型半导体区域的相对层的连接面的杂质浓度， 第二导电型半导体区域的半导体区域。

    SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
    3.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 有权
    固态成像装置，制造固态成像装置的方法和电子装置

    公开(公告)号：US20120086845A1

    公开(公告)日：2012-04-12

    申请号：US13249825

    申请日：2011-09-30

    申请人： Takayuki Enomoto ,  Hideaki Togashi

    发明人： Takayuki Enomoto ,  Hideaki Togashi

    IPC分类号： H04N5/335 ,  H01L31/18 ,  H01L27/14

    CPC分类号： H01L27/14689 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464

    摘要： A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.

    摘要翻译： 固态成像装置包括基板，通孔，垂直栅电极和电荷定影膜。 在基板中形成根据接收光量产生信号电荷的光电转换单元。 通孔从基板的背面侧的前表面侧形成。 垂直栅电极通过通孔中的栅极绝缘膜形成，并将由光电转换单元产生的信号电荷读出到读出部分。 电荷固定膜具有负的固定电荷，其形成为覆盖基板的背面侧的通孔的内周面的一部分，同时覆盖基板的后表面侧。

    Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
    4.
    发明授权
    Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus 有权
    固态成像装置，制造固态成像装置的方法和电子装置

    公开(公告)号：US08624306B2

    公开(公告)日：2014-01-07

    申请号：US13249825

    申请日：2011-09-30

    申请人： Takayuki Enomoto ,  Hideaki Togashi

    发明人： Takayuki Enomoto ,  Hideaki Togashi

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14689 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464

    摘要： A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.

    摘要翻译： 固态成像装置包括基板，通孔，垂直栅电极和电荷定影膜。 在基板中形成根据接收光量产生信号电荷的光电转换单元。 通孔从基板的背面侧的前表面侧形成。 垂直栅电极通过通孔中的栅极绝缘膜形成，并将由光电转换单元产生的信号电荷读出到读出部分。 电荷固定膜具有负的固定电荷，其形成为覆盖基板的背面侧的通孔的内周面的一部分，同时覆盖基板的后表面侧。

    SUPPORT FOR PROTEIN IMMOBILIZATION, IMMOBILIZED PROTEIN, AND METHODS FOR PRODUCING THE SAME
    5.
    发明申请
    SUPPORT FOR PROTEIN IMMOBILIZATION, IMMOBILIZED PROTEIN, AND METHODS FOR PRODUCING THE SAME 审中-公开
    蛋白质固定，固定化蛋白质的制备及其生产方法

    公开(公告)号：US20130109072A1

    公开(公告)日：2013-05-02

    申请号：US13702308

    申请日：2011-06-08

    申请人： Tatsuo Tsunoda ,  Takayuki Nara ,  Seigo Ono ,  Chisato Sekikawa ,  Fujio Mizukami ,  Shuzo Kojima ,  Naoki Tahara ,  Hideaki Togashi ,  Miki Egami

    发明人： Tatsuo Tsunoda ,  Takayuki Nara ,  Seigo Ono ,  Chisato Sekikawa ,  Fujio Mizukami ,  Shuzo Kojima ,  Naoki Tahara ,  Hideaki Togashi ,  Miki Egami

    IPC分类号： C12N11/14 ,  B01J32/00 ,  C12N11/02

    CPC分类号： C12N11/14 ,  B01J32/00 ,  C01B37/00 ,  C07K17/14 ,  C12N11/02 ,  Y10T428/2982

    摘要： A support for enzyme immobilization is described, which is for immobilizing enzymes of various molecular sizes and also for, due to the modification of the surface silanol groups of porous silica particles, for immobilizing various kinds of enzymes, and enables the design of an immobilized enzyme, which exhibits an activity equivalent to that of the corresponding non-immobilized enzyme and withstands repeated use. A method for producing the support is also described. The support includes porous silica particles having an interparticle void structure therein, characterized in that the porous silica particles have a specific average particle size, a specific surface area, a specific pore volume, a specific pore size distribution and a specific porosity and have a substituent containing an organic group or an amino group on the surface thereof. An immobilized protein obtained by immobilizing a protein on the above support is also described.

    摘要翻译： 描述了酶固定的载体，其用于固定各种分子尺寸的酶，并且由于多孔二氧化硅颗粒的表面硅烷醇基团的修饰，用于固定各种酶，并且使得能够设计固定化酶 ，其表现出与相应的非固定化酶相当的活性并经受重复使用。 还描述了用于制备载体的方法。 载体包括其中具有颗粒间空隙结构的多孔二氧化硅颗粒，其特征在于多孔二氧化硅颗粒具有比表面积，比孔面积，比孔径，比孔径和比孔径，并具有取代基 在其表面含有有机基团或氨基。 还描述了通过将蛋白质固定在上述载体上获得的固定化蛋白质。

    Roll-over valve for motor vehicle
    6.
    发明授权
    Roll-over valve for motor vehicle 失效
    机动车翻转阀

    公开(公告)号：US4742840A

    公开(公告)日：1988-05-10

    申请号：US943876

    申请日：1986-12-19

    申请人： Teruo Takahashi ,  Naotoshi Mitsui ,  Hideaki Togashi

    发明人： Teruo Takahashi ,  Naotoshi Mitsui ,  Hideaki Togashi

    IPC分类号： B60K15/035 ,  F02M25/08 ,  F16K17/36

    CPC分类号： B60K15/03519 ,  F16K17/36 ,  Y10T137/0874

    摘要： A roll-over valve includes a valve body wherein a raised seat portion which a position sensitive ball rests on is disposed below an inlet opening via which fuel vapors enter into the valve body chamber. A ball follower has a top member disposed below the inlet opening and adapted to close the inlet upon being moved toward the inlet by the ball.

    摘要翻译： 翻转阀包括阀体，其中位置敏感球放置的凸起座部分设置在燃料蒸汽通过其进入阀体室的入口下方。 球跟随器具有设置在入口开口下方的顶部构件，并且适于在通过球向入口移动时关闭入口。

    Imaging device, method of manufacturing the same, and electronic apparatus
    7.
    发明授权
    Imaging device, method of manufacturing the same, and electronic apparatus 有权
    成像装置及其制造方法以及电子装置

    公开(公告)号：US08916916B2

    公开(公告)日：2014-12-23

    申请号：US13358258

    申请日：2012-01-25

    申请人： Hideaki Togashi

    发明人： Hideaki Togashi

    IPC分类号： H01L31/0216 ,  H01L27/146 ,  H01L21/768

    CPC分类号： H01L27/14614 ,  H01L21/76898

    摘要： A solid-state imaging device includes: a substrate which is formed of a semiconductor and includes a first surface and a second surface which face opposite sides; a gate insulation film which is formed on a trench formed in the substrate to penetrate the first surface and the second surface; and a gate electrode which is embedded in the trench through the gate insulation film to be exposed to a second surface side of the substrate. A step difference is formed from the second surface of the substrate to a tip end surface of the gate electrode on the second surface side.

    摘要翻译： 固态成像装置包括：由半导体形成并包括第一表面和面对相对侧的第二表面的基板; 栅极绝缘膜，其形成在形成在所述基板中的沟槽上以穿透所述第一表面和所述第二表面; 以及栅极电极，其通过栅极绝缘膜嵌入沟槽中以暴露于衬底的第二表面侧。 从基板的第二表面到第二表面侧的栅电极的末端表面形成台阶差。

    IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    9.
    发明申请
    IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
    成像装置，其制造方法和电子装置

    公开(公告)号：US20120217558A1

    公开(公告)日：2012-08-30

    申请号：US13358258

    申请日：2012-01-25

    申请人： Hideaki Togashi

    发明人： Hideaki Togashi

    IPC分类号： H01L31/0216 ,  H01L31/02

    CPC分类号： H01L27/14614 ,  H01L21/76898

    摘要： A solid-state imaging device includes: a substrate which is formed of a semiconductor and includes a first surface and a second surface which face opposite sides; a gate insulation film which is formed on a trench formed in the substrate to penetrate the first surface and the second surface; and a gate electrode which is embedded in the trench through the gate insulation film to be exposed to a second surface side of the substrate. A step difference is formed from the second surface of the substrate to a tip end surface of the gate electrode on the second surface side.

    摘要翻译： 固态成像装置包括：由半导体形成并包括第一表面和面对相对侧的第二表面的基板; 栅极绝缘膜，其形成在形成在所述基板中的沟槽上以穿透所述第一表面和所述第二表面; 以及栅极电极，其通过栅极绝缘膜嵌入沟槽中以暴露于衬底的第二表面侧。 从基板的第二表面到第二表面侧的栅电极的末端表面形成台阶差。