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    Semiconductor integrated circuit device and process for producing the same
    1.
    发明授权
    Semiconductor integrated circuit device and process for producing the same 失效
    半导体集成电路器件及其制造方法

    公开(公告)号：US5061985A

    公开(公告)日：1991-10-29

    申请号：US364463

    申请日：1989-06-12

    申请人： Hideo Meguro ,  Yoshiaki Yoshiura ,  Tatsuo Itagaki ,  Ken Uchida ,  Tsuneo Satoh ,  Seiichi Ichihara ,  Koichi Nagasawa

    发明人： Hideo Meguro ,  Yoshiaki Yoshiura ,  Tatsuo Itagaki ,  Ken Uchida ,  Tsuneo Satoh ,  Seiichi Ichihara ,  Koichi Nagasawa

    IPC分类号： H01L23/485 ,  H01L23/498 ,  H01L23/532

    CPC分类号： H01L23/485 ,  H01L23/49855 ,  H01L23/53223 ,  H01L2924/0002

    摘要： With the reduction in the size of semiconductor integrated circuit devices, there have been increases in the resistance at the contact portions of metal interconnections and in the incidence of contact failure. To solve these problems, the present invention provides a novel interconnection structure. Namely, a metal interconnection which has a barrier metal layer formed thereunder and which is also used to form electrode lead-out portions for external connection is arranged such that, among the following portions, that is, electrode portions of a plurality of elements fabricated on a semiconductor substrate in the form of an integrated circuit, interconnection portions between these elements, and the above-described electrode lead-out portions for external connection, those portions of the interconnection layer which are defined as the electrode portions of the elements and the interconnection portions are isolated from the semiconductor substrate by means of a barrier metal layer, while those portions of the interconnection layer which are defined as the electrode lead-out portions for external connection are formed not through the barrier metal layer but directly on the interlayer insulating layer.

    摘要翻译： 随着半导体集成电路器件的尺寸的减小，金属互连接触部分的电阻和接触故障的发生率都有所增加。 为了解决这些问题，本发明提供了一种新的互连结构。 也就是说，在其下面形成有阻挡金属层并且也用于形成用于外部连接的电极引出部分的金属互连布置成使得在以下部分中，即在下列部分之中制造多个元件的电极部分 集成电路形式的半导体衬底，这些元件之间的互连部分和用于外部连接的上述电极引出部分，被定义为元件的电极部分的互连层的那些部分和互连 部分通过阻挡金属层与半导体基板隔离，而被定义为外部连接的电极引出部的互连层的那些部分不是通过阻挡金属层而是直接形成在层间绝缘层上 。

    Method of and apparatus for sputtering, and integrated circuit device
    3.
    发明授权
    Method of and apparatus for sputtering, and integrated circuit device 失效
    溅射方法和装置以及集成电路装置

    公开(公告)号：US5175608A

    公开(公告)日：1992-12-29

    申请号：US574770

    申请日：1990-08-30

    申请人： Masayasu Nihei ,  Jin Onuki ,  Yasushi Koubuchi ,  Kunio Miyazaki ,  Tatsuo Itagaki

    发明人： Masayasu Nihei ,  Jin Onuki ,  Yasushi Koubuchi ,  Kunio Miyazaki ,  Tatsuo Itagaki

    IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/768

    CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/35 ,  C23C14/358 ,  H01J37/321 ,  H01J37/34 ,  H01J37/3444 ,  H01L21/76843 ,  Y10S257/915 ,  Y10T428/1234 ,  Y10T428/12528 ,  Y10T428/12639 ,  Y10T428/12674

    摘要： A thin film forming method and apparatus, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make Ar ions flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to maintain a stable discharge and perform reverse sputter in a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. An aluminum wiring film whose peak value of x-ray diffraction strength at a (111) plane is 150 Kcps or more is possible. Also, a barrier layer having a layered structure of granular and columnar crystals or a mixed structure thereof providing an efficient barrier effect and a large specific resistance is possible.

    摘要翻译： 一种薄膜形成方法和装置，其中负电压交替地施加到靶和基底以进行成膜和交替地反向溅射。 此外，线圈安装在靶和衬底之间，并且使高频电流流过其中以产生等离子体。 绝对值小于溅射时的负基极电压可以施加到衬底上，以使Ar离子在进行反溅射的同时流入衬底。 因此，台阶覆盖度为0.3以上的电影是可能的。 也可以在高真空区域保持稳定的放电并进行反向溅射。 Ar气氛的压力可以降低到10-3乇或更低。 在（111）面的x射线衍射强度的峰值为150Kcps以上的铝配线膜是可能的。 此外，具有粒状和柱状晶体的层叠结构的阻挡层或其提供有效的屏障效应和大电阻率的混合结构是可能的。