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    Semiconductor integrated circuit device and process for producing the same
    1.
    发明授权
    Semiconductor integrated circuit device and process for producing the same 失效
    半导体集成电路器件及其制造方法

    公开(公告)号：US5061985A

    公开(公告)日：1991-10-29

    申请号：US364463

    申请日：1989-06-12

    申请人： Hideo Meguro ,  Yoshiaki Yoshiura ,  Tatsuo Itagaki ,  Ken Uchida ,  Tsuneo Satoh ,  Seiichi Ichihara ,  Koichi Nagasawa

    发明人： Hideo Meguro ,  Yoshiaki Yoshiura ,  Tatsuo Itagaki ,  Ken Uchida ,  Tsuneo Satoh ,  Seiichi Ichihara ,  Koichi Nagasawa

    IPC分类号： H01L23/485 ,  H01L23/498 ,  H01L23/532

    CPC分类号： H01L23/485 ,  H01L23/49855 ,  H01L23/53223 ,  H01L2924/0002

    摘要： With the reduction in the size of semiconductor integrated circuit devices, there have been increases in the resistance at the contact portions of metal interconnections and in the incidence of contact failure. To solve these problems, the present invention provides a novel interconnection structure. Namely, a metal interconnection which has a barrier metal layer formed thereunder and which is also used to form electrode lead-out portions for external connection is arranged such that, among the following portions, that is, electrode portions of a plurality of elements fabricated on a semiconductor substrate in the form of an integrated circuit, interconnection portions between these elements, and the above-described electrode lead-out portions for external connection, those portions of the interconnection layer which are defined as the electrode portions of the elements and the interconnection portions are isolated from the semiconductor substrate by means of a barrier metal layer, while those portions of the interconnection layer which are defined as the electrode lead-out portions for external connection are formed not through the barrier metal layer but directly on the interlayer insulating layer.

    摘要翻译： 随着半导体集成电路器件的尺寸的减小，金属互连接触部分的电阻和接触故障的发生率都有所增加。 为了解决这些问题，本发明提供了一种新的互连结构。 也就是说，在其下面形成有阻挡金属层并且也用于形成用于外部连接的电极引出部分的金属互连布置成使得在以下部分中，即在下列部分之中制造多个元件的电极部分 集成电路形式的半导体衬底，这些元件之间的互连部分和用于外部连接的上述电极引出部分，被定义为元件的电极部分的互连层的那些部分和互连 部分通过阻挡金属层与半导体基板隔离，而被定义为外部连接的电极引出部的互连层的那些部分不是通过阻挡金属层而是直接形成在层间绝缘层上 。